RS2507MLS-B [RECTRON]
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RECTRON SEMICONDUCTOR 
RS2501M
THRU
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RS2507M
SINGLE-PHASE SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 25 Amperes
FEATURES
* Low leakage
* Low forward voltage
* Mounting position: Any
* Surge overload rating: 300 amperes peak
* Ideal for printed cikcuit boakds
* High forward surge current capability
RS-25M
(
)
)
.189 4.8
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233
* Epoxy: Device has UL flammability classification 94V-O
(
.173 4.4
(
)
)
.150 3.8
(
)
)
1.193 30.3
(
.134 3.4
(
1.169 29.7
(
)
)
.106 2.7
(
.114 2.9
)
)
(
.096 2.3
(
)
)
.094 2.4
(
.098 2.5
(
.078 2.0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
)
)
.031 0.8
(
)
)
.043 1.1
(
(
.035 0.9
.023 0.6
(
)
(
)
)
(
.303 7.7
)
)
.402 10.2
.303 7.7
(
)
(
(
.287 7.3
.386 9.8
.287 7.3
Dimensions in inches and (millimeters)
= 25oC unless otherwise noted)
RATINGS
-
MAXIMUM RATINGS (At T
A
SYMBOL
RS2501M RS2502M RS2503M RS2504M RS2505M RS2506M RS2507M UNITS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
V
RRM
RMS
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
Volts
Volts
Volts
V
V
DC
100
1000
Maximum Average Forward Rectified Output Current at Tc = 100oC
with heatsink
I
O
25
300
Amps
Amps
0 C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
T
J,
T
STG
-55 to + 150
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
RS2501M RS2502M RS2503M RS2504M RS2505M RS2506M RS2507M UNITS
Maximum Forward Voltage Drop per element at 12.5A DC
VF
1.1
10
Volts
= 25oC
uAmps
@TA
C
Maximum Reverse Current at Rated
DC Blocking Voltage per element
I
R
@T
= 100oC
0.2
mAmps
2001-5
RATING AND CHARACTERISTIC CURVES (RS2501M THRU RS2507M)
POWER DISSIPATION
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
60
50
40
30
20
sine wave
Tj=150
10
5
TC = 150 (TYP)
2
1
30
20
10
0
T
C
= 25 (TYP)
0.5
0.2
0.1
pulse test
per one diode
0
4
8
12
16
20
24
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
SURGE FORWARD CURRENT CAPABILITY
TYPICAL FORWARD CURRENT
DERATING CURVE
4
300
on glass-epoxi substrate
sine wave
0
3
2
1
8.3ms 8.3ms
P.C.B
1 cycle
non-repetitive
Tj=25
250
200
150
soldering land 5mmf
sine wave
R-load
free in air
0
0
40
80
120
160
1
2
5
10
20
50
100
AMBIENT TEMPERATURE, (
)
NUMBER OF CYCLE
TYPICAL FORWARD CURRENT
DERATING CURVE
CONTACT THERMAL RESISTANCE fcf
with thermal compound
1
30
28
26
24
22
20
heatsink
Tc
Tc
0.9
0.8
0.7
0.6
0.5
0.4
sine wave
R-load
on heatsink
18
16
14
12
10
80 90 100 110 120 130 140 150 160
2
3
4
5
6
7
8
CASE TEMPERATURE, (
)
MOUNTING TORQUE (Kg.cm)
RECTRON
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