SR835SK [RECTRON]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 35V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DPAK-3;
| 型号： | SR835SK |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 35V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, DPAK-3 整流二极管 |
| 文件： | 总2页 (文件大小：29K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SR820
THRU
SR860
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 60 Volts CURRENT 8.0 Amperes
FEATURES
* Low switching noise
* Low forward voltage drop
* Low thermal resistance
* High current capability
* High surge capabitity
* High reliability
TO-220A
(
)
.187 4.7
(
)
.148 3.8
(
)
)
.153 3.9
MECHANICAL DATA
(
)
.413 10.5
.108
(
.146 3.7
(
)
.374 9.5
* Case: To-220A molded plastic
(
)
2.75
(
(
)
)
.053 1.3
.047 1.2
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
(
)
.270 6.9
.230 5.8
(
)
(
(
)
)
.610 15.5
.583 14.8
* Weight: 2.24 grams
.04MAX.
(
)
1.0
.157
(
)
4.0
(
)
)
.583 14.8
.051
(
.531 13.5
(
)
1.3
(
)
)
.043 1.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
(
.035 0.9
(
)
.022 0.56
(
)
)
.102 2.6
(
)
.014 0.36
(
.091 2.3
.126
(
)
3.2
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
RATINGS
SYMBOL
SR820 SR830 SR835 SR840 SR845 SR850 SR860 UNITS
V
V
RRM
RMS
20
14
20
30
21
30
35
25
35
40
28
40
45
32
45
50
35
50
60
42
60
Volts
Volts
Volts
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
DC
O
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at Derating Case Temperature
I
8.0
Amps
Amps
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
I
FSM
150
2.5
Typical Thermal Resistance (Note 1)
Typical Junction Capacitance (Note 3)
Operating Temperature Range
R θ J C
0C/W
pF
0 C
C
J
J
700
450
-65 to + 150
T
-65 to + 125
Storage Temperature Range
T
STG
-65 to + 150
0 C
ELECTRICAL CHARACTERISTICS (At TA
= 25oC unless otherwise noted)
CHARACTERISTICS
SYMBOL
SR820 SR830 SR835 SR840 SR845 SR850 SR860 UNITS
Maximum Instantaneous Forward Voltage at 8.0A DC
.65
.75
Volts
V
F
Maximum Average Reverse Current
@T
5.0
50
mAmps
mAmps
C
C
= 25oC
= 100oC
I
R
at Rated DC Blocking Voltage
@T
NOTES : 1. Thermal Resistance Junction to Case.
2. Suffix “R” for Reverse Polarity.
2001-4
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
(
)
RATING AND CHARACTERISTIC CURVES SR820 THRU SR860
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
FIG. 2 - TYPICAL REVERSE CHARACTERISTICS
10
10
8
T
= 150
C
SR850~SR860
SR820~SR845
6
4
2
T
= 125
C
1.0
Single Phase Half Wave
60Hz Inductive or
Resistive Load
T
= 75
C
.1
0
0
50
100
150
T
= 25
C
CASE TEMPERATURE, (
)
FIG. 3 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
.01
155
8.3ms Single Half Sine-Wave
(JEDED Method)
150
145
SR820~SR845
SR850~SR860
.001
0
20
40
60
80
100 120 140
140
135
130
125
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
1
2
5
10
20
50
100
NUMBER OF CYCLES AT 60Hz
FIG. 5 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
4000
2000
50
10
SR820~SR845
SR820~SR845
1000
800
600
SR850~SR860
400
200
100
1.0
0.1
SR850~SR860
T
= 25
J
Pulse Width=300uS
1% Duty Cycle
.1
.4
1.0
4
10
40 80 100
.1
.2
.3
.4
.5
.6
.7
.8
.9 1.0
REVERSE VOLTAGE, ( V )
INSTANTANEOUS FORWARD VOLTAGE, (V)
RECTRON
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 8A, 35V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2PAK-3
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