T4ARBU405M-C-HF [RECTRON]

Rectifier Diode,;
T4ARBU405M-C-HF
型号: T4ARBU405M-C-HF
厂家: RECTRON SEMICONDUCTOR    RECTRON SEMICONDUCTOR
描述:

Rectifier Diode,

文件: 总4页 (文件大小:307K)
中文:  中文翻译
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T4ARBU405M  
THRU  
T4ARBU407M  
TRANSIENT VOLTAGE SUPPRESSORS  
GPP BRIDGE RECTIFIER  
VOLTAGE RANGE 600 to 1000 Volts CURRENT 4.0 Amperes  
FEATURES  
* Ideal for printed circuit board  
* Surge overload rating: 130 amperes peak  
* Mounting position: Any  
RBU  
.880 (22.3)  
.860 (21.8)  
.140 (3.56)  
.130 (3.30)  
MECHANICAL DATA  
* Epoxy: Device has UL flammability classification 94V-O  
.160 (4.1)  
.140 (3.5)  
.512 (13.0)  
.085 (2.16)  
.075 (1.90)  
.100 (2.54)  
.085 (2.16)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
.022 (0.56)  
.018 (0.46)  
.080 (2.03)  
.065 (1.65)  
.210 (5.33)  
.190 (4.83)  
Dimensions in inches and (millimeters)  
O
MAXIMUM RATINGS (@ T  
A
=25 C unless otherwise noted)  
RATINGS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
SYMBOL  
T4ARBU405M  
T4ARBU406M  
T4ARBU407M  
1000  
UNITS  
V
V
600  
420  
600  
800  
560  
800  
Volts  
Volts  
Volts  
RRM  
RMS  
700  
Maximum DC Blocking Voltage  
V
1000  
DC  
O
Maximum Average Forward Rectified Current  
I
Amps  
at T = 50oC (With Heat-sink)  
4.0  
A
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
Amps  
130  
70  
FSM  
I2  
A2/Sec  
t
Typical Current Squarad Time  
O
Peak Power Dissipation at T =25 C,T =1mS (Note 1)  
P
Maximum 400  
380~ 420  
0.73  
Watts  
Volts  
Amps  
Volts  
pF  
A
P
PPM  
Breakdown Voltage Range at I =1mA  
T
V
BR  
Maximum Peak Pulse Current  
I
PPM  
Maximum Clamping Voltage at I  
=0.73A  
V
C
548  
PPM  
Typical Junction Capacitance (Note 3)  
Operating and Storage Temperature Range  
C
J
40  
T , T  
J
0 C  
-55 to + 150  
STG  
O
ELECTRICAL CHARACTERISTICS(@T =25 C unless otherwise noted)  
A
T4ARBU405M  
T4ARBU406M  
1.1  
T4ARBU407M  
CHARACTERISTICS  
SYMBOL  
UNITS  
Volts  
Maximum Instantaneous Forward Voltage at 4.0A DC  
V
F
@T = 25oC  
A
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
5.0  
I
R
uAmps  
@T = 125oC  
A
500  
O
NOTES : 1. Non-repetitive current pulse, per Fig.8 and derated above T =25 C per Fig.7.  
A
2010-05  
REV:O  
2. "Fully ROHS compliant", "100% Sn plating (Pb-free)".  
3. Measured at 1MHz and applied reverse voltage of 4.0 voltage.  
4. Available in Halogen-free epoxy by adding suffix -HF after the part nbr.  
RATING AND CHARACTERISTICS CURVES ( T4ARBU405M THRU T4ARBU407M )  
4.0  
40  
Heatsink Mounting, TC  
1.6x1.6x0.06" Thk  
(4.0x4.0x.15cm) AL.Plate  
10  
3.0  
2.0  
4.0  
P.C.B. Mounted,TA  
1.0  
0.4  
0.47x0.47" (12x12mm) Copper Pads  
0.375" (9.5mm) Lead Length  
60Hz Resistive or Inductive Load  
1.0  
0
T
= 25 OC  
A
Pulse Width = 300mS  
1% Duty Cycle  
0.1  
0
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
0
50  
100  
150  
TEMPERATURE, (OC)  
INSTANTANEOUS FORWARD VOLTAGE, (V)  
FIG.2 TYPICAL INSTANTANEOUS  
FORWARD CHARACTERISTICS  
FIG.1 DERATING CURVE OUTPUT  
RECTIFIED CURRENT  
240  
200  
1000  
100  
8.3mS Single Half Sine-Wave  
JEDEC Method  
T
= 100 OC  
A
160  
120  
10  
T
= 25 OC  
80  
A
1.0  
40  
0
50~400V  
600~1000V  
0.1  
0
20  
40  
60  
80  
100  
120  
140  
1
2
5
10  
20  
50  
100  
PERCENT RATED PEAK REVERSE VOLTAGE, (%)  
NUMBER OF CYCLES AT 60Hz  
FIG.4 MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
FIG.3 TYPICAL REVERSE CHARACTERISTICS  
100  
1000  
10  
100  
1
10  
0.1  
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
REVERSE VOLTAGE, (V)  
t, HEATING TIME (sec.)  
FIG.5 TYPICAL JUNCTION CAPACITANCE  
PER LEG  
FIG.6 TYPICAL TRANSIENT THERMA  
IMPEDANCE  
RATING AND CHARACTERISTICS CURVES ( T4ARBU405M THRU T4ARBU407M )  
100  
100  
75  
Non-Repetitive  
Pulse Waveform  
Shown in Fig.3  
T
A
=25OC  
10  
50  
25  
1.0  
0.1  
0.1u  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
1.0u  
10u  
100u  
1m  
10u  
PULSE WIDTH,(S)  
AMBIENT TEMPERATURE, (OC)  
FIG.7 PEAK PULSE POWER RATING CURVE  
FIG.8 PULSE DERATING CURVE  
100000  
150  
100  
f = 1MHz  
Pulse Width (td) is Defined  
Vsig = 50mVp-p  
as the Point Where the Peak  
T = 25 OC  
J
tr = 10usec.  
Current Decays to 50% of IPPM  
Peak Value  
IPPM  
10000  
1000  
100  
Measured at  
Zero Bias  
I
PPM  
2
HALF VALUE -  
10/1000usec. Waveform  
as Defined by R.E.A.  
50  
0
Measured at  
Stand off  
Voltage,VWM  
td  
0
1.0  
2.0  
3.0  
4.0  
1.0  
10  
, BREAKDOWN VOLTAGE, (V)  
100  
200  
V
(BR)  
TIME, (mS)  
FIG.10 TYPICAL JUNCTION CAPACITANCE  
FIG.9 PULSE WAVEFORM  
Schematic  
DISCLAIMER NOTICE  
Rectron Inc reserves the right to make changes without notice to any product  
specification herein, to make corrections, modifications, enhancements or other  
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-  
lity for any errors or inaccuracies. Data sheet specifications and its information  
contained are intended to provide a product description only. "Typical" paramet-  
ers which may be included on RECTRON data sheets and/ or specifications ca-  
n and do vary in different applications and actual performance may vary over ti-  
me. Rectron Inc does not assume any liability arising out of the application or  
use of any product or circuit.  
Rectron products are not designed, intended or authorized for use in medical,  
life-saving implant or other applications intended for life-sustaining or other rela-  
ted applications where a failure or malfunction of component or circuitry may di-  
rectly or indirectly cause injury or threaten a life without expressed written appr-  
oval of Rectron Inc. Customers using or selling Rectron components for use in  
such applications do so at their own risk and shall agree to fully indemnify Rect-  
ron Inc and its subsidiaries harmless against all claims, damages and expendit-  
ures.  

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