TFMAJ130C [RECTRON]

Trans Voltage Suppressor Diode, 400W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, PLASTIC PACKAGE-2;


型号：	TFMAJ130C
厂家：	RECTRON SEMICONDUCTOR
描述：	Trans Voltage Suppressor Diode, 400W, 130V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AC, PLASTIC PACKAGE-2 瞬态抑制器二极管光电二极管局域网
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中文：	中文翻译
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TVS

RECTRON

TECHNICAL SPECIFICATION

TFMAJ

SERIES

SEMICONDUCTOR

GPP TRANSIENT VOLTAGE SUPPRESSOR

400 WATT PEAK POWER 1.0 WATT STEADY STATE

FEATURES

* Plastic package has underwriters laboratory

* Glass passivated chip construction

* 400 watt surage capability at 1ms

* Excellent clamping capability

* Low zener impedance

DO-214AC

* Fast response time

Ratings at 25 ^oC ambient temperature unless otherwise specified.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ^oC ambient temperature unless otherwise specified.

Dimensions in inches and (millimeters)

DEVICES FOR BIPOLAR APPLICATIONS

For Bidirectional use C or CA suffix for types TFMAJ5.0 thru TFMAJ170

Electrical characteristics apply in both direction

MAXIMUM RATINGS (At T

= 25^oC unless otherwise noted)

SYMBOL

VALUE

UNITS

Watts

Amps

RATINGS

PPM

Minimum 400

SEE TABLE 1

Peak Power Dissipation with a 10/1000uS (Note 1,2,5 Fig.1)

Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.2 )

PPM

Steady State Power Dissipation (Note 3)

(

)

1.0

Watts

FSM

Amps

Volts

Peak Forward Surge Current per Fig.5 (Note 3)

3.5

Maximum Instantaneous Forward Voltage at 25A (Note 4)

, TSTG

-55 to + 150

⁰C

Operating and Storage Temperature Range

1998-8

NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T

= 25^oC per Fig.2.

2. Mounted on 0.2 X 0.2”( 5.0 X 5.0mm ) copper pad to each terminal.

3. Lead temperature at TL = 25^oC

4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.

5. Peak pulse power waveform is 10/1000uS.

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RECTRON

相关型号：

TFMAJ130C-W

Trans Voltage Suppressor Diode, 400W, Bidirectional, 1 Element, Silicon, DO-214AC, PLASTIC PACKAGE-2