TFMBJ54CAV-T [RECTRON]
Trans Voltage Suppressor Diode,;
| 型号： | TFMBJ54CAV-T |
| 厂家： | 
RECTRON SEMICONDUCTOR |
| 描述： | Trans Voltage Suppressor Diode, 瞬态抑制器 二极管 光电二极管 局域网 |
| 文件： | 总4页 (文件大小：1017K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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TECHNICAL SPECIFICATION
TFMBJ
SERIES
SEMICONDUCTOR
GPP TRANSIENT VOLTAGE SUPPRESSOR
600 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 600 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
DO-214AA
* Fast response time
Ratings at 25 oC ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types TFMBJ5.0 thru TFMBJ170
Electrical characteristics apply in both direction
MAXIMUM RATINGS (At T
A
= 25oC unless otherwise noted)
SYMBOL
VALUE
UNITS
Watts
RATINGS
P
PPM
Minimum 600
Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1)
Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 )
I
PPM
SEE TABLE 1
5.0
Amps
Watts
Steady State Power Dissipation at
TL
= 75oC (Note 2)
PM(AV)
Peak Forward Surge Current 8.3mS single half sine-wave
superimposed on rated load (JEDEC method) (Note 2,3)
unidirectional only
I
FSM
100
Amps
Maximum Instantaneous Forward Voltage at 50A for unidirectional
only (Note 3,4)
V
F
SEE NOTE 4
-55 to + 150
Volts
0 C
T
J
, TSTG
Operating and Storage Temperature Range
= 25oC per Fig.2.
1998-8
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
2. Mounted on 0.2 X 0.2”( 5.0 X 5.0mm ) copper pad to each terminal.
3. Lead temperature at TL = 25oC
4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.
5. VF = 3.5V on TFMBJ-5.0 thru TFMBJ-90 devices and VF = 5.0V on TFMBJ-100 thru TFMBJ-170 devices.
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