2SB549S 概述
800mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR 小信号双极晶体管
2SB549S 规格参数
生命周期: | Obsolete | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.48 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 0.8 A | 集电极-发射极最大电压: | 100 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 40 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | PNP |
最大功率耗散 (Abs): | 10 W | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 45 MHz | Base Number Matches: | 1 |
2SB549S 数据手册
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Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
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1.
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DATA SHEET
SILICON POWER TRANSISTOR
2SB548, 549/2SD414, 415
PNP/NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
PACKAGE DRAWING (UNIT: mm)
• Ideal for audio amplifier drivers with 30 W to 50 W output
• High voltage
• Available for small mount spaces due to small and thin package
• Easy to be attached to radiators
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
2SB548/ 2SB549/ Unit
2SD414
2SD415
−100/120
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
VCBO
VCEO
V
V
−80/80
−100/100
−5.0/5.0
VEBO
V
−0.8/0.8
−1.5/1.5
1.0
IC(DC)
A
Collector current
IC(pulse)*
PT (Ta = 25°C)
PT (Tc = 25°C)
Tj
A
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
W
W
°C
°C
10
Electrode Connection
150
−55 to +150
Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
ICBO
Conditions
VCB = −80/80 V, IE = 0
VEB = −3.0/3.0 V, IC = 0
VCE = −5.0/5.0 V, IC = −2.0/2.0 mA*
VCE = −5.0/5.0 V, IC = −200/200 mA*
IC = −500/500 mA, IB = −50/50 mA*
IC = −500/500 mA, IB = −50/50 mA*
VCE = −5.0/5.0 V, IC = −100/100 mA
VCB = −10/10 V, IE = 0, f = 1.0 MHz
MIN.
TYP.
90
MAX.
Unit
µA
µA
−1.0/1.0
−1.0/1.0
Collector cutoff current
Emitter cutoff current
DC current gain
IEBO
hFE1
20
40
DC current gain
hFE2
320
−0.4/0.3 −2.0/2.0
−0.9/0.9 −1.5/1.5
70/45
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Collector capacitance
VCE(sat)
VBE(sat)
fT
V
V
MHz
pF
Cob
25/15
*
Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE2 CLASSIFICATION
Marking
hFE2
S
R
Q
P
40 to 80
60 to 120
100 to 200
160 to 320
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16141EJ2V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
2SB548, 549/2SD414, 415
TYPICAL CHARACTERISTICS (Ta = 25°C)
N
Note
1. 1 mm aluminum board
for heatsink
2. No insulating board
3. Silicon grease coating
4. Horizontal level
With infinite heatsink
Without te heatsink
Temperature T (°C)
Case Temperature Tc (°C)
Note
Note
1. Tc = 25 °C
2. Derate the dissipation limited
area by case temperature and
duty cycle.
1. Tc = 25 °C
2. Derate the dissipation limited
area by case temperature and
duty cycle.
3. S/b limited area is a single
pulse. Derate this area by case
temperature.
3. S/b limited area is a single
pulse. Derate this area by
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Collector to Emitter Voltage VCE (V)
Pulse Width PW (ms)
2
Data Sheet D16141EJ2V0DS
2SB548, 549/2SD414, 415
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ꢄꢁꢁꢂꢐꢉꢓꢍ
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3
Data Sheet D16141EJ2V0DS
2SB548, 549/2SD414, 415
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
2SB549S 相关器件
型号 | 制造商 | 描述 | 价格 | 文档 |
2SB549S-AZ | RENESAS | 2SB549S-AZ | 获取价格 | |
2SB550 | SAVANTIC | Silicon PNP Power Transistors | 获取价格 | |
2SB550 | ISC | Silicon PNP Power Transistors | 获取价格 | |
2SB551 | SAVANTIC | Silicon PNP Power Transistors | 获取价格 | |
2SB551 | ISC | Silicon PNP Power Transistors | 获取价格 | |
2SB552 | ISC | Silicon PNP Power Transistors | 获取价格 | |
2SB552 | SAVANTIC | Silicon PNP Power Transistors | 获取价格 | |
2SB552 | JMNIC | Silicon PNP Power Transistors | 获取价格 | |
2SB552R | TOSHIBA | TRANSISTOR 15 A, 180 V, PNP, Si, POWER TRANSISTOR, TO-3, BIP General Purpose Power | 获取价格 | |
2SB552_15 | JMNIC | Silicon PNP Power Transistors | 获取价格 |
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