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NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
• Ideal for use of high voltage current such as TV vertical
deflection (drive and output), audio output, pin cushion
• Complementary transistor with 2SA1221 and 2SA1222
= 140 V: 2SA1221/2SC2958
= 160 V: 2SA1222/2SC2959
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
10 ms, duty cycle
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Collector cutoff current
Emitter cutoff current
DC current gain
DC base voltage
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
= 100 V, I
= 5.0 V, I
= 2.0 V, I
= 100 mA
= 5.0 V, I
= 20 mA
= 1.0 A, I
= 0.2 A
= 1.0 A, I
= 0.2 A
= 10 V, I
= 0, f = 1.0 MHz
= 10 V, I
** Pulse test PW
s, duty cycle
2% per pulsed
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16150EJ1V0DS00
Date Published April 2002 N CP(K)
Printed in Japan