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2SC4331L(0)-AZ

更新时间：2024-11-09 01:39:08

品牌：RENESAS

描述：TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-251VAR

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2SC4331L(0)-AZ 概述

TRANSISTOR,BJT,NPN,100V V(BR)CEO,5A I(C),TO-251VAR

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To our customers,

Old Company Name in Catalogs and Other Documents

On April 1^st, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas Electronics Corporation took over all the business of both

companies. Therefore, although the old company name remains in this document, it is a valid

Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1^st, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

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DATA SHEET

SILICON POWER TRANSISTOR

2SC4331,4331-Z

NPN SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

The 2SC4331 and 2SC4331-Z are mold power transistors developed for

high-speed switching and features a very low collector-to-emitter saturation

voltage.

PACKAGE DRAWING (Unit: mm)

2.3 ±0.2

0.5 ±0.1

6.5 ±0.2

5.0 ±0.2

This transistor is ideal for use in switching regulators, DC/DC converters,

motor drivers, solenoid drivers, and other low-voltage power supply devices,

as well as for high-current switching.

FEATURES

• Available for high-current control in small dimension

• Z type is a lead-processed product and is deal for mounting a hybrid IC.

• Low collector saturation voltage

1.1 ±0.2

V^CE(sat)= 0.3 V MAX. (IC = 3.0 A)

0.5 ⁺−0⁰.^.1²

0.5 ⁺−⁰0^..²1

• Fast switching speed:

2.3 2.3

t^f≤ 0.4 μs MAX. (IC = 3.0 A)

• High DC current gain and excellent linearity

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

<R>

TO-251 (MP-3)

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

VCBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)

I^B(DC)

PT1

150

6.5 ±0.2

5.0 ±0.2

4.4 ±0.2

100

2.3 ±0.2

0.5 ±0.1

7.0

Note

Collector Current (DC)

5.0

Collector Current (pulse) ^{Note 1}

Base Current (DC)

2.5

2 3

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C)

Junction Temperature

°C

0.5 ±0.1

2.3 ±0.3

1.0 ^{Note 2}, 2.0 ^{Note 3}

0.5 ±0.1

PT2

2.3 ±0.3

0.15 ±0.15

T^j

150

Storage Temperature

T^stg

−55 to +150

Electrode Connectio

1. Base

TO-252 (MP-3Z)

2. Collector

3. Emitter

4. Collector Fin

Notes 1. PW ≤ 10 ms, duty cycle ≤ 50%

2. Printing board mounted

3. 7.5 cm²× 0.7 mm, ceramic board mounted

Note The depth of notch at the top of the fin is

from 0 to 0.2 mm.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. D16136EJ3V0DS00 (3rd edition)

Date Published January 2007 NS CP(K)

Printed in Japan

2002

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

2SC4331,4331-Z

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Parameter

Collector to emitter voltage

Symbol

VCEO(SUS)

VCEX(SUS)

Conditions

MIN.

100

TYP.

MAX.

Unit

IC = 2.5 A, IB = 0.25 A, L = 1 mH

IC = 2.5 A, IB1 = −IB2 = 0.25 A,

V^BE(OFF)= −1.5 V, L = 180 μH, clamped

100

Collector cutoff current

ICBO

ICER

VCE = 100 V, IE = 0

1.0

μA

VCE = 100 V, RBE = 50 Ω, TA = 125°C

VCE = 100 V, VBE(OFF) = −1.5 V

ICEX1

ICEX2

VCE = 100 V, VBE(OFF) = −1.5 V,

TA = 125°C

1.0

Emitter cutoff current

DC current gain ^Note

Collector saturation voltage ^Note

Base saturation voltage ^Note

Collector capacitance

Gain bandwidth product

Turn-on time

IEBO

h^FE1

VEB = 5.0 V, IC = 0

μA

VCE = 2.0 V, IC = 0.5 A

VCE = 2.0 V, IC = 1.0 A

VCE = 2.0 V, IC = 3.0 A

IC = 3.0 A, IB = 0.15 A

IC = 4.0 A, IB = 0.2 A

IC = 3.0 A, IB = 0.15 A

IC = 4.0 A, IB = 0.2 A

VCB = 10 V, IE = 0, f = 1.0 MHz

VCE = 10 V, IE = −0.5 A

100

h^FE2

200

400

h^FE3

V^CE(sat)1

V^CE(sat)2

V^BE(sat)1

V^BE(sat)2

Cob

0.3

0.5

1.2

1.5

MHz

μs

150

ton

I^C= 3.0 A, RL = 17 Ω,

I^B1= −IB2 = 0.15 A, VCC ≅ 50 V

Refer to the test circuit.

0.3

1.5

0.4

Storage time

tstg

Fall time

Note Pulse test PW ≤ 350 μs, duty cycle ≤ 2%

hFE CLASSIFICATION

Marking

hFE2

100 to 200

150 to 300

200 to 400

SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT

Base current

waveform

Collector current

waveform

Data Sheet D16136EJ3V0DS

2SC4331,4331-Z

TYPICAL CHARACTERISTICS (TA = 25°C)

With infinite heatsink

Ceramic board mounted,

7.5 cm²× 0.7 mm

Case Temperature TC (°C)

Ambient Temperature TA (°C)

Single pulse

Pulse Width PW (s)

Collector to Emitter Voltage VCE (V)

Pulse test

Collector Current IC (A)

Collector to Emitter Voltage VCE (V)

Data Sheet D16136EJ3V0DS

2SC4331,4331-Z

Pulse test

Collector Current I^C(A)

Data Sheet D16136EJ3V0DS

2SC4331,4331-Z

•

The information in this document is current as of January, 2007. The information is subject to

change without notice. For actual design-in, refer to the latest publications of NEC Electronics data

sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not

all products and/or types are available in every country. Please check with an NEC Electronics sales

representative for availability and additional information.

• No part of this document may be copied or reproduced in any form or by any means without the prior

written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may

appear in this document.

•

NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual

property rights of third parties by or arising from the use of NEC Electronics products listed in this document

or any other liability arising from the use of such products. No license, express, implied or otherwise, is

granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.

Descriptions of circuits, software and other related information in this document are provided for illustrative

purposes in semiconductor product operation and application examples. The incorporation of these

circuits, software and information in the design of a customer's equipment shall be done under the full

responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by

customers or third parties arising from the use of these circuits, software and information.

•

• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,

customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To

minimize risks of damage to property or injury (including death) to persons arising from defects in NEC

Electronics products, customers must incorporate sufficient safety measures in their design, such as

redundancy, fire-containment and anti-failure features.

• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and

"Specific".

The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-

designated "quality assurance program" for a specific application. The recommended applications of an NEC

Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of

each NEC Electronics product before using it in a particular application.

"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

and visual equipment, home electronic appliances, machine tools, personal electronic equipment

and industrial robots.

"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster

systems, anti-crime systems, safety equipment and medical equipment (not specifically designed

for life support).

"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life

support systems and medical equipment for life support, etc.

The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC

Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications

not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to

determine NEC Electronics' willingness to support a given application.

(Note)

(1)

"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its

majority-owned subsidiaries.

(2)

"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as

defined above).

M8E 02. 11-1

2SC4331L(0)-AZ 相关器件

型号	制造商	描述	价格	文档
2SC4331L-AZ	NEC	暂无描述	获取价格
2SC4331L-AZ	RENESAS	5000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP-3, 3 PIN	获取价格
2SC4331M	RENESAS	5000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-251AA, TO-251, MP-3, 3 PIN	获取价格
2SC4331M-AZ	RENESAS	5000mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, MP-3, 3 PIN	获取价格
2SC4332	NEC	NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING	获取价格
2SC4332-K	RENESAS	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA, MP-3, 3 PIN	获取价格
2SC4332-K-Z	NEC	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, MP-3Z, 3 PIN	获取价格
2SC4332-L	NEC	暂无描述	获取价格
2SC4332-L-Z	RENESAS	5000mA, 60V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-252AA, MP-3Z, 3 PIN	获取价格
2SC4332-M	NEC	Small Signal Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA, MP-3, 3 PIN	获取价格