2SC4332M-E1 [RENESAS]
TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-251VAR;
| 型号： | 2SC4332M-E1 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,BJT,NPN,60V V(BR)CEO,5A I(C),TO-251VAR |
| 文件： | 总5页 (文件大小：344K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON POWER TRANSISTOR
2SC4332,4332-Z
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
PACKAGE DRAWINGS (Unit: mm)
The 2SC4332 and 2SC4332-Z are mold power transistors developed
for high-speed switching and feature a very low collector-to-emitter
saturation voltage.
2.3 0.2
0.5 0.1
6.5 0.2
5.0 0.2
4
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage power
supply devices, as well as for high-current switching.
1
2
3
FEATURES
1.1 0.2
• Low collector saturation voltage
VCE(sat) = 0.3 V MAX. (IC = 3.0 A / IB = 0.15 A)
• Fast switching speed:
0.5 +−00..12
0.5 +−00..21
2.3 2.3
tf ≤ 0.3 μs MAX. (IC = 3.0 A)
• High DC current gain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
TO-251 (MP-3)
Collector to Base Voltage
Collector to Emitter Voltage
Base to Emitter Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current (DC)
VCBO
VCEO
VEBO
IC(DC)
100
V
V
6.5 0.2
5.0 0.2
4.4 0.2
60
<R>
2.3 0.2
0.5 0.1
7.0
V
Note
Note
5.0
A
4
Note1
IC(pulse)
10
2.5
A
IB(DC)
PT (TC = 25°C)
PT (TA = 25°C)
Tj
A
1
2 3
Total Power Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
15
W
W
°C
°C
0.5 0.1
2.3 0.3
1.0Note2, 2.0Note3
0.5 0.1
2.3 0.3
0.15 0.15
150
ELECTRODE CONNECTION
Tstg
−55 to +150
1. Base
2. Collector
3. Emitter
Notes 1. PW ≤ 10 ms, duty cycle ≤ 50%
2. Printing board mounted
TO-252 (MP-3Z)
3. 7.5 cm2 x 0.7 mm, ceramic board mounted
4. Collector Fin
Note The depth of notch at the top of the fin is
from 0 to 0.2 mm.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16430EJ3V0DS00 (3rd edition)
Date Published July 2006 NS CP(K)
Printed in Japan
2002
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SC4332,4332-Z
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Parameter
Symbol
VCEO(SUS)
VCEX(SUS)
Conditions
MIN.
60
TYP.
MAX.
Unit
V
Collector to Emitter Voltage
Collector to Emitter Voltage
IC = 3.0 A, IB = 0.3 A, L = 1 mH
IC = 3.0 A, IB1 = −IB2 = 0.3 A,
60
V
VBE(OFF) = −1.5 V, L = 180 μH, clamped
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
Collector Cut-off Current
ICBO
ICER
VCE = 60 V, IE = 0
10
1.0
10
μA
mA
μA
VCE = 60 V, RBE = 51 Ω, TA = 125°C
VCE = 60 V, VBE(OFF) = −1.5 V
ICEX1
ICEX2
VCE = 60 V, VBE(OFF) = −1.5 V,
TA = 125°C
1.0
mA
Emitter Cut-off Current
DC Current Gain
IEBO
VEB = 5.0 V, IC = 0
10
μA
Note
hFE1
VCE = 2.0 V, IC = 0.5 A
VCE = 2.0 V, IC = 1.0 A
VCE = 2.0 V, IC = 3.0 A
IC = 3.0 A, IB = 0.15 A
IC = 4.0 A, IB = 0.2 A
IC = 3.0 A, IB = 0.15 A
IC = 4.0 A, IB = 0.2 A
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IE = −0.5 A
100
100
60
Note
DC Current Gain
hFE2
400
Note
DC Current Gain
hFE3
Note
Collector Saturation Voltage
Collector Saturation Voltage
Base Saturation Voltage
Base Saturation Voltage
Collector Capacitance
Gain Bandwidth Product
Turn-on Time
VCE(sat)1
0.3
0.5
1.2
1.5
V
V
Note
VCE(sat)2
Note
VBE(sat)1
V
Note
VBE(sat)2
V
Cob
fT
130
150
pF
MHz
μs
μs
μs
ton
tstg
tf
IC = 3.0 A, RL = 16.7 Ω,
IB1 = −IB2 = 0.15 A, VCC 50 V
Refer to the test circuit.
0.3
1.5
0.3
Storage Time
Fall Time
Note Pulse test PW ≤ 350 μs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
Data Sheet D16430EJ3V0DS
2SC4332,4332-Z
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING CURVE OF
SAFE OPERATING AREA
18
15
12
9
6
3
0
0
25
50
75 100 125 150 175
Case Temperature TC (°C)
Case Temperature TC (°C)
FORWARD BIAS SAFE OPERATING AREA
TRANSIENT THERMAL RESISTANCE vs.
PULSE WIDTH
100
10
1
1000
100
10
T
C
= 25°C
Single pulse
R
th(j-a) = 125°C/W
I
I
C (pluse)
C (DC)
R
th(j-c) = 8.33°C/W
1
T
C
= 25°C
Single pulse
0.1
0.1
1m 10m 100m
1
10 100 1000 10000
1
10
Collector to Emitter Voltage VCE (V)
100
Pulse Width PW (s)
COLLECTOR CURRENT vs.
DC CURRENT GAIN vs. COLLECTOR CURRENT
COLLECTOR TO EMITTER VOLTAGE
Collector to Emitter Voltage VCE (V)
Collector Current IC (A)
3
Data Sheet D16430EJ3V0DS
2SC4332,4332-Z
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
Collector Current IC (A)
Collector Current IC (A)
OUTPUT CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
STORAGE TIME AND FALL TIME vs.
COLLECTOR CURRENT
Collector to Base Voltage VCB (V)
Collector Current IC (A)
4
Data Sheet D16430EJ3V0DS
2SC4332,4332-Z
•
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M8E 02. 11-1
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