2SC458(LG)C [RENESAS]
100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN;
| 型号： | 2SC458(LG)C |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-92(1), 3 PIN |
| 文件： | 总11页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2SC458 (LG), 2SC2310
Silicon NPN Epitaxial
ADE-208-1044A (Z)
2nd. Edition
Mar. 2001
Application
•
Low frequency low noise amplifier
Outline
TO-92 (1)
tter
ollector
. Base
2SC458 (LG), 2SC2310
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
2SC458 (LG)
2SC2310
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
30
55
30
50
V
5
5
V
100
100
mA
mA
mW
°C
°C
Emitter current
IE
–100
–100
Collector power dissipation
Junction temperature
Storage temperature
PC
200
200
Tj
150
150
Tstg
–55 to +150
to +150
2SC458 (LG), 2SC2310
Electrical Characteristics (Ta = 25°C)
2SC458 (LG)
2SC2310
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
30
30
5
—
—
—
—
—
—
55
50
5
—
—
—
—
—
—
V
V
V
IC = 10 µA, IE = 0
IC = 1 mA, RBE
Collector to emitter
breakdown voltage
=
Emitter to base
IE = 10 µA, IC = 0
breakdown voltage
Collector cutoff current ICBO
Emitter cutoff current IEBO
DC current transfer ratio hFE*1
—
—
—
—
—
0.5
0.5
500
0.2
—
—
—
—
—
0.5
0.5
µA
VCB =18 V, IE = 0
—
—
VEB = 2 V, IC = 0
100
—
100
—
VCE = 12 V, IC = 2 mA
10 mA, IB = 1 mA
Collector to emitter
saturation voltage
VCE(sat)
Base to emitter voltage VBE
Gain bandwidth product fT
—
—
—
0.67 0.75
—
2 V, IC = 2 mA
230
1.8
—
E = 12 V, IC = 2 mA
Collector output
capacitance
Cob
NF
hie
3.5
VCB = 10 V, IE = 0,
f = 1 MHz
Noise figure
—
—
3
—
—
dB
VCE = 6 V, IC = 0.1 mA,
f = 120 Hz, Rg = 500 Ω
Small signal input
impedance
—
70
—
—
—
—
kΩ
VCE = 5V, IC = 0.1mA,
f = 270 Hz
Small signal voltage
feedback ratio
hre
× 10–6
Small signal current
transfer ratio
130
11.0
Small signal output
admittance
µS
Note: 1. The are grouped by hFE as follows.
B
D
2SC458 (LG) 100 to 2
320
to 320
250 to 500
—
2SC2310
100 to 200
2SC458 (LG), 2SC2310
Typical Output Characteristics
Maximum Collector Dissipation Curve
10
8
300
200
100
6
4
20
10 µA
2
IB = 0
0
5
15
20
25
0
50
100
150
Cololtage VCE (V)
Ambient Temperature Ta (°C)
atio vs.
ent
Typical Transfer Characteristics
VCE = 12 V
00
0
5
4
3
2
1
0
0.2
0.03
0.1
0.3
1.0
3
10
30
B
Collector Current IC (mA)
2SC458 (LG), 2SC2310
Small Signal Current Transfer Ratio vs.
Collector Current
Base to Emitter Voltage vs.
Ambient Temperature
300
200
100
0
0.9
0.8
0.7
0.6
0.5
0.4
f = 270 Hz
VCE = 12 V
VCE = 12 V
IC = 2 mA
0.03
0.1
0.3
1.0
3
10
30
–20
40
60
80
Collector Current IC (mA)
Ta (°C)
tance vs.
Voltage
Collector Output Capacitance vs.
Collector to Base Voltage
2
1
5
4
3
2
1
IC = 0
f = 1 MHz
IE = 0
f = 1 MHz
0
0
2
4
6
8
10
20
Emitter to Base Voltage VEB (V)
)
2SC458 (LG), 2SC2310
Contours of Constant Noise Figure
Contours of Constant Noise Figure
8
10
5
10
5
14
12
VCE = 6 V
4
f = 1 kHz
10
8
3
2
2
NF = 0.5 dB
NF = 1dB
2
1.0
1.0
1.0
6
3
2
0.5
0.5
4
6
3
0.2
0.1
0.2
0.1
4
VCE = 6 V
f = 120 Hz
8
8
0.05 0.1 0.2
0.5
1.0 2.0
0.05
0.5
1.0 2.0
Collector Current IC (mA)
IC (mA)
Contours of Constant Noise Figure
4
y
10
5
10
2
VCE = 6 V
f = 10 kHz
1
2
1.0
1
0.5
2
4
0.2
0.1
0
0.05 0.1
30
100
300
1k
3k
10k
30k
C
Frequency f (Hz)
2SC458 (LG), 2SC2310
Noise Figure vs. Collector to Emitter Voltage
8
6
IC = 0.1 mA
Rg = 500 Ω
f = 120 Hz
4
2
0
1
2
5
10
20
Collector to Emitter Voltage VCE
h Parameter vs. Collector Current
100
50
IC = 0.1 mA
f = 270 Hz
VCE = 6 V
f = 270 Hz
20
10
5
hoe
hie
h
h
2
r
h
re
fe
1.0
0.5
hoe
0.2
0.1
hoe
hre
hfe
hie
.0 hfe
hie
0.05
0.02
0.01
0.8
0.5
0.0
1.0
2
5
10
20
Collector to Emitter Voltage VCE (V)
2SC458 (LG), 2SC2310
Package Dimensions
As of January, 2001
Unit: mm
4.8 ± 0.4
3.8 ± 0.4
0.60 Max
0.55Max
Hitachi Code
JEDEC
EIAJ
TO-92 (1)
Conforms
Conforms
0.25 g
Mass (reference value)
2SC458 (LG), 2SC2310
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4. Design your application so that the product is used within the ranitachi particularly
for maximum rating, operating supply voltage range, heat radlation
conditions and other characteristics. Hitachi bears no respwhen used
beyond the guaranteed ranges. Even within the guaranforeseeable
failure rates or failure modes in semiconductor devires such as fail-
safes, so that the equipment incorporating Hitachinjury, fire or other
consequential damage due to operation of the
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products.
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