2SC5337QR-AZ [RENESAS]

TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243;


型号：	2SC5337QR-AZ
厂家：	RENESAS TECHNOLOGY CORP
描述：	TRANSISTOR,BJT,NPN,15V V(BR)CEO,250MA I(C),TO-243 晶体晶体管放大器
文件：	总7页 (文件大小：104K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Data Sheet

2SC5337

NPN Silicon RF Transistor for High-Frequency

Low Distortion Amplifier 4-Pin Power Minimold

R09DS0047EJ0300

Rev.3.00

Sep 14, 2012

FEATURES

•

Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA

Low noise

NF = 1.5 dB TYP. @ V^CE= 10 V, IC = 50 mA, f = 500 MHz

NF = 2.0 dB TYP. @ V^CE= 10 V, IC = 50 mA, f = 1 GHz

4-pin power minimold package with improved gain from the 2SC4536

•

<R>

ORDERING INFORMATION

Part Number

2SC5337

Order Number

2SC5337-AZ

Package

Quantity

25 pcs (Non reel)

1 kpcs/reel

Supplying Form

4-pin power

minimold

(Pb-Free) ^Note

• Magazine case

• 12 mm wide embossed taping

• Collector face the perforation side of the tape

2SC5337-T1

2SC5337-T1-AZ

Note Contains Lead in the part except the electrode terminals.

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 25 pcs.

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

VCBO

VCEO

VEBO

Ratings

Unit

3.0

250

Note

Total Power Dissipation

Junction Temperature

Storage Temperature

Ptot

2.0

150

°C

Tstg

−65 to +150

Note Mounted on 16 cm²× 0.7 mm (t) ceramic substrate (Copper plating)

CAUTION

Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

R09DS0047EJ0300 Rev.3.00

Sep 14, 2012

Page 1 of 5

2SC5337

ELECTRICAL CHARACTERISTICS (TA = +25°C)

<R>

Parameter

DC Characteristics

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

Collector Cut-off Current

Emitter Cut-off Current

DC Current Gain

ICBO

IEBO

VCB = 20 V, IE = 0

–

0.01

0.03

120

5.0

μA

–

VBE = 2 V, IC = 0

Note 1

hFE

VCE = 10 V, IC = 50 mA

200

RF Characteristics

Insertion Power Gain

Noise Figure (1)

⏐S21e⏐²VCE = 10 V, IC = 50 mA, f = 1 GHz

NF ^{Note 2}VCE = 10 V, IC = 50 mA, f = 500 MHz

NF ^{Note 2}VCE = 10 V, IC = 50 mA, f = 1 GHz

7.0

–

8.3

1.5

–

3.5

–

Noise Figure (2)

–

2.0

V^CE= 10 V, IC = 50 mA, RS = RL = 75 Ω,

Vⁱⁿ= 105 dBμV/75 Ω, f1 = 190 MHz,

f²= 90 MHz, f = f1 − f2

2nd Order Intermoduration Distortion

IM2

–

59.0

V^CE= 10 V, IC = 50 mA, RS = RL = 75 Ω,

Vⁱⁿ= 105 dBμV/75 Ω, f1 = 190 MHz,

f²= 200 MHz, f = 2 × f1 − f2

3rd Order Intermoduration Distortion

IM3

–

82.0

–

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%

2. R^S= RL = 50 Ω, tuned

<R>

hFE CLASSIFICATION

Rank

QR/YQR

QS/YQS

Marking

hFE Value

60 to 120

100 to 200

R09DS0047EJ0300 Rev.3.00

Sep 14, 2012

Page 2 of 5

2SC5337

TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)

TOTAL POWER DISSIPATION

vs. AMBIENT TEMPERATURE

REVERSE TRANSFER CAPACITANCE

vs. COLLECTOR TO BASE VOLTAGE

5.0

Mounted on Ceramic Substrate

f = 1 MHz

(16 cm²× 0.7 mm (t) )

3.0

2.0

1.0

0.5

0.3

100

150

20 30

Ambient Temperature TA (˚C)

Collector to Base Voltage VCB (V)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

DC CURRENT GAIN vs.

COLLECTOR CURRENT

300

IB = 0.6 mA

0.5 mA

VCE = 10 V

100

0.4 mA

100

0.3 mA

0.2 mA

0.1 mA

0.1

100

1 000

Collector to Emitter Voltage VCE (V)

Collector Current IC (mA)

GAIN BANDWIDTH PRODUCT

vs. COLLECTOR CURRENT

INSERTION POWER GAIN

vs. COLLECTOR CURRENT

VCE = 10 V

f = 1 GHz

0.5

0.3

V^CE= 10 V

f = 1 GHz

50 70 100

Collector Current IC (mA)

Collector Current I^C(mA)

Remark The graphs indicate nominal characteristics.

R09DS0047EJ0300 Rev.3.00

Sep 14, 2012

Page 3 of 5

2SC5337

NOISE FIGURE vs.

COLLECTOR CURRENT

INSERTION POWER GAIN, MAG

vs. FREQUENCY

VCE = 10 V

f = 1 GHz

VCE = 10 V

I^C= 50 mA

|S21e|²

MAG

0.2

0.4 0.6 0.8 1.0 1.4 2.0

Frequency f (GHz)

100

Collector Current I^C(mA)

IM3, IM2+, IM2– vs.

COLLECTOR CURRENT

VCE = 10 V

IM3

IM2+

IM2–

: Vin = 110 dB

f = 2 × 190 – 200 MHz

V/75 Ω 2 tone each

μV/75 Ω 2 tone each

IM2+ : Vin = 105 dB

f = 90 + 100 MHz

IM^2–: Vin = 105 dB

V/75 Ω 2 tone each

f = 190 – 90 MHz

100

300

Collector Current I^C(mA)

Remark The graphs indicate nominal characteristics.

<R>

S-PARAMETERS

S-parameters and noise parameters are provided on our web site in a form (S2P) that enables direct import of the

parameters to microwave circuit simulators without the need for keyboard inputs.

Click here to download S-parameters.

[Products] → [RF Devices] → [Device Parameters]

URL http://www.renesas.com/products/microwave/

R09DS0047EJ0300 Rev.3.00

Sep 14, 2012

Page 4 of 5

2SC5337

PACKAGE DIMENSIONS

4-PIN POWER MINIMOLD (UNIT: mm)

4.5 0.1

2.1

1.6

0.8

1.5 0.1

0.46

0.06

0.25 0.02

0.42 0.06

1.5

3.0

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

R09DS0047EJ0300 Rev.3.00

Sep 14, 2012

Page 5 of 5

Revision History

2SC5337 Data Sheet

Description

Summary

Rev.

Date

Page

1.00

2.00

2.10

3.00

Mar 01, 1996

Aug 28, 2001

Sep 06, 2001

Sep 14, 2012

–

First edition issued

Second edition issued

Second V1 edition issued

Throughout The company name is changed to Renesas Electronics Corporation.

p.1

p.2

p.4

Modification of ORDERING INFORMATION

Modification of ELECTRICAL CHARACTERISTICS

Modification of h_FECLASSIFICATION

Modification of method for obtaining S-parameters

All trademarks and registered trademarks are the property of their respective owners.

C - 1

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[Colophon 2.2]

2SC5337QR-AZ [RENESAS]

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