2SC5432-T1-EB [RENESAS]

RF SMALL SIGNAL TRANSISTOR;
2SC5432-T1-EB
型号: 2SC5432-T1-EB
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

RF SMALL SIGNAL TRANSISTOR

文件: 总12页 (文件大小:305K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1010  
Rectronics Corporation  
Issued by: Renesas Electronics Corporation (m)  
Send any inquiries to http://www.renesas.c
Notice  
1.  
2.  
All information included in this document is current as of the date this document is issued. Such information, however, is  
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please  
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to  
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.  
Renesas Electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property rights  
of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.  
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights  
of Renesas Electronics or others.  
3.  
4.  
You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part.  
Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of  
semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software,  
and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by  
you or third parties arising from the use of these circuits, software, or information.  
5.  
When exporting the products or technology described in this document, you should comply with the applicable export control  
laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas  
Electronics products or the technology described in this document for any purpose relating to military applications or use by  
the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and  
technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited  
under any applicable domestic or foreign laws or regulations.  
6.  
7.  
Renesas Electronics has used reasonable care in preparing the information includs document, but Renesas Electronics  
does not warrant that such information is error free. Renesas Electronics assuy whatsoever for any damages  
incurred by you resulting from errors in or omissions from the information
Renesas Electronics products are classified according to the following tard”, “High Quality”, and  
“Specific”. The recommended applications for each Renesas Electroduct’s quality grade, as  
indicated below. You must check the quality grade of each Renesing it in a particular  
application. You may not use any Renesas Electronics product as “Specific” without the prior  
written consent of Renesas Electronics. Further, you may nroduct for any application for  
which it is not intended without the prior written consent s Electronics shall not be in any way  
liable for any damages or losses incurred by you or thif any Renesas Electronics product for an  
application categorized as “Specific” or for which te you have failed to obtain the prior written  
consent of Renesas Electronics. The quality gradroduct is “Standard” unless otherwise  
expressly specified in a Renesas Electronics d
“Standard”:  
Computers; office equipent; test and measurement equipment; audio and visual  
equipment; home elels; personal electronic equipment; and industrial robots.  
“High Quality”: Transportation eqhips, etc.); traffic control systems; anti-disaster systems; anti-  
crime systems; equipment not specifically designed for life support.  
“Specific”:  
Aircraft; aee repeaters; nuclear reactor control systems; medical equipment or  
systems fe support devices or systems), surgical implantations, or healthcare  
interany other applications or purposes that pose a direct threat to human life.  
8.  
9.  
You should use the Rescribed in this document within the range specified by Renesas Electronics,  
especially with respect toperating supply voltage range, movement power voltage range, heat radiation  
characteristics, installation characteristics. Renesas Electronics shall have no liability for malfunctions or  
damages arising out of the use Electronics products beyond such specified ranges.  
Although Renesas Electronics endors to improve the quality and reliability of its products, semiconductor products have  
specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further,  
Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to  
guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a  
Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire  
control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because  
the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system  
manufactured by you.  
10. Please contact a Renesas Electronics sales office for details as to environmental matters such as the environmental  
compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable  
laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS  
Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with  
applicable laws and regulations.  
11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas  
Electronics.  
12. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this  
document or Renesas Electronics products, or if you have any other inquiries.  
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-  
owned subsidiaries.  
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.  
DATA SHEET  
NPN SILICON RF TRANSISTOR  
2SC5432  
NPN EPITAXIAL SILICON TRANSISTOR  
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION  
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD  
FEATURES  
Contains same chip as 2SC5006  
Flat-lead 3-pin thin-type ultra super minimold package  
ORDERING INFORMATION  
Part Number  
Quantity  
Sup
2SC5432  
50 pcs (Non reel)  
3 kpcs/reel  
• 8 mm wide embosse
• Pin 3 (collector) tape  
2SC5432-T1  
Remark To order evaluation samples, contact your ne
The unit sample quantity is 50 pcs.  
ABSOLUTE MAXIMUM RATINGS (TA =
Parameter  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
Sym
Unit  
V
V
3
100  
V
mA  
mW  
°C  
°C  
125  
Total Power Dissipation  
Junction Temperature  
Storage Temperature  
150  
tg  
65 to +150  
Note Free air  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10100EJ01V0DS (1st edition)  
The mark shows major revised points.  
(Previous No. P13076EJ1V0DS00)  
Date Published February 2002 CP(K)  
Printed in Japan  
NEC Corporation 1998  
NEC Compound Semiconductor Devices 2002  
2SC5432  
ELECTRICAL CHARACTERISTICS (TA = +25°C)  
Parameter  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
Symbol  
ICBO  
IEBO  
h
Test Conditions  
MIN.  
TYP.  
MAX.  
1 000  
1 000  
145  
Unit  
nA  
nA  
VCB = 10 V, IE = 0 mA  
VEB = 1 V, IC = 0 mA  
= 3 V, I = 7 mA  
VCE = 3 V, IC = 7 mA, f = 1 GHz  
= 3 V, I = 7 mA, f = 1 GHz  
VCE = 3 V, IC = 7 mA, f = 1 GHz  
= 3 V, I = 0 mA, f = 1 MHz  
FE Note 1  
CE  
C
V
80  
3.0  
7.0  
Gain Bandwidth Product  
Insertion Power Gain  
Noise Figure  
fT  
4.5  
10.0  
1.4  
0.7  
GHz  
dB  
dB  
pF  
2
S
21e  
V
CE  
C
NF  
C
2.5  
re Note 2  
CB  
E
Reverse Transfer Capacitance  
V
1.5  
Notes 1. Pulse measurement: PW 350 µs, Duty Cycle 2%  
2. Collector to base capacitance when the emitter grounded  
hFE CLASSIFICATION  
Rank  
EB  
TC  
FB  
TD  
Marking  
hFE Value  
80 to 110  
100 to 145  
2
Data Sheet PU10100EJ01V0DS  
2SC5432  
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°C)  
TOTAL POWER DISSIPATION  
vs. AMBIENT TEMPERATURE  
REVERSE TRANSFER CAPACITANCE  
vs. COLLECTOR TO BASE VOLTAGE  
150  
125  
100  
75  
2.0  
1.0  
0.5  
f = 1 MHz  
Free Air  
50  
0.2  
0.1  
25  
0
25  
50  
75  
100  
125  
(˚C)  
150  
50  
1
5
10  
20  
50  
Ambient Temperature T  
A
o Base Voltage VCB (V)  
COLLECTOR CURRENT vs.  
BASE TO EMITTER VOLTAGE  
RENT vs.  
ITTER VOLTAGE  
20  
10  
5
I = 160 µA  
B
V
CE = 3 V  
140  
120  
µ
µ
A
A
100  
80  
µ
µ
A
A
10  
60  
µ
A
40  
20  
µ
µ
A
A
0
0
5
10  
Base to
Collector to Emitter Voltage VCE (V)  
DC CURRE
COLLECTOR T  
GAIN BANDWIDTH PRODUCT  
vs. COLLECTOR CURRENT  
200  
100  
50  
10  
8
VCE = 3 V  
V
CE = 3 V  
f = 1 GHz  
6
4
20  
10  
2
0
0.5  
1
2
5
10  
20  
0.5  
1
2
5
10  
20  
50 100  
Collector Current I (mA)  
C
Collector Current I  
C
(mA)  
3
Data Sheet PU10100EJ01V0DS  
2SC5432  
INSERTION POWER GAIN, MAG  
vs. FREQUENCY  
INSERTION POWER GAIN  
vs. COLLECTOR CURRENT  
25  
20  
15  
10  
5
14  
12  
10  
8
V
CE = 3 V  
V
CE = 3 V  
f = 1 GHz  
IC = 7 mA  
MAG  
6
4
2
|S21e  
|
2
0
0.1  
0
0.5  
0.2  
0.5  
1.0  
2.0  
5.0  
1
2
5
10  
20  
50 100  
Frequency f (GHz)  
Collector Current I  
C
(mA)  
NOISE FIGURE vs. COLLECTOR CURRENT  
4
V
CE = 3 V  
f = 1 GHz  
3
2
1
0
0.5  
1
2
5
Collecto
Remark The graphs teristics.  
4
Data Sheet PU10100EJ01V0DS  
2SC5432  
S-PARAMETERS  
VCE = 1 V, IC = 1 mA, ZO = 50 Ω  
Frequency  
(GHz)  
S11  
S21  
S21  
S21  
S12  
S12  
S22  
S22  
S22  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
0.893  
0.773  
0.745  
0.711  
0.698  
0.708  
0.716  
0.696  
0.690  
0.714  
0.738  
0.750  
0.758  
0.770  
0.785  
49.6  
90.6  
3.192  
2.404  
1.906  
1.603  
1.331  
1.148  
1.025  
0.916  
0.809  
0.719  
0.657  
0.619  
0.572  
0.513  
0.483  
143.8  
117.2  
97.3  
84.7  
74.2  
64.2  
55.8  
50.0  
44.2  
39.0  
33.0  
29.3  
28.1  
26.2  
23.0  
0.119  
0.180  
0.203  
0.205  
0.206  
0.199  
0.183  
0.165  
0.145  
0.131  
0.125  
0.126  
0.137  
0.152  
0.16
59.2  
37.9  
25.0  
15.4  
9.1  
0.903  
0.720  
0.610  
0.564  
0.537  
0.511  
0.492  
0.483  
0.486  
0.482  
0.482  
0.508  
0.541  
0.559  
0.566  
21.2  
35.3  
46.5  
54.0  
58.9  
63.9  
71.0  
79.0  
86.7  
95.1  
106.0  
116.7  
124.7  
131.8  
139.6  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
3.0  
117.4  
135.9  
150.3  
161.3  
168.6  
176.0  
175.0  
6.5  
6.9  
7.9  
10.1  
13.9  
22.2  
32.3  
.3  
167.7  
162.9  
158.7  
154.7  
150.9  
148.0  
VCE = 1 V, IC = 3 mA, ZO = 50 Ω  
Frequency  
(GHz)  
S11  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg
MAG.  
ANG.  
(deg.)  
0.754  
0.668  
0.644  
0.630  
0.634  
0.653  
0.656  
0.640  
0.643  
0.667  
0.686  
0.698  
0.706  
0.721  
0.737  
77.4  
121.7  
143.9  
158.8  
169.7  
177.1  
178.0  
172.0  
164
1
7.160  
4.630  
3.356  
2.664  
2.
79  
5  
40.8  
36.7  
34.8  
32.1  
27.2  
145  
0.148  
0.151  
0.153  
0.158  
0.169  
0.181  
0.199  
0.211  
0.220  
.5  
32.9  
27.4  
25.4  
25.3  
27.6  
31.6  
36.1  
39.6  
41.4  
43.4  
45.9  
48.4  
50.5  
51.6  
0.729  
0.469  
0.359  
0.306  
0.271  
0.250  
0.242  
0.241  
0.245  
0.248  
0.265  
0.295  
0.322  
0.346  
0.365  
40.9  
61.1  
73.2  
80.5  
86.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
3.0  
92.7  
100.8  
108.6  
116.1  
125.3  
135.7  
143.4  
148.5  
153.8  
159.7  
VCE = 1 V, IC = 5 mA, ZO = 50 Ω  
Frequency  
(GHz)  
S11  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
3.0  
0.678  
0.630  
0.615  
0.609  
0.620  
0.641  
0.640  
0.626  
0.632  
0.657  
0.673  
0.685  
0.693  
0.708  
0.722  
95.9  
137.1  
155.7  
168.4  
177.6  
176.7  
172.7  
167.2  
160.6  
155.8  
152.8  
149.8  
146.9  
144.3  
142.8  
9.388  
5.585  
3.937  
3.084  
2.528  
2.121  
1.868  
1.656  
1.451  
1.300  
1.192  
1.128  
1.055  
0.960  
0.895  
123.0  
100.5  
87.4  
80.3  
74.3  
67.5  
61.6  
57.6  
53.2  
48.9  
43.4  
39.5  
37.7  
35.0  
30.3  
0.082  
0.100  
0.109  
0.115  
0.124  
0.135  
0.147  
0.157  
0.164  
0.173  
0.187  
0.203  
0.222  
0.232  
0.240  
44.1  
34.1  
33.2  
34.5  
36.8  
39.3  
43.0  
46.4  
48.6  
49.0  
48.9  
49.5  
50.5  
51.6  
51.6  
0.611  
0.363  
0.274  
0.228  
0.203  
0.192  
0.194  
0.199  
0.203  
0.214  
0.238  
0.265  
0.289  
0.311  
0.331  
54.6  
78.9  
93.7  
103.2  
112.2  
121.5  
129.8  
136.6  
144.2  
152.4  
160.2  
164.8  
168.2  
172.0  
176.2  
5
Data Sheet PU10100EJ01V0DS  
2SC5432  
VCE = 3 V, IC = 1 mA, ZO = 50 Ω  
Frequency  
(GHz)  
S11  
S21  
S21  
S21  
S12  
S12  
S22  
S22  
S22  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
0.914  
0.795  
0.769  
0.731  
0.711  
0.715  
0.721  
0.700  
0.690  
0.711  
0.735  
0.746  
0.751  
0.763  
0.777  
43.7  
82.1  
3.280  
2.575  
2.086  
1.783  
1.498  
1.286  
1.146  
1.029  
0.913  
0.817  
0.741  
0.702  
0.654  
0.587  
0.552  
148.3  
123.7  
104.4  
91.7  
81.7  
72.2  
63.6  
57.8  
52.0  
46.8  
40.6  
36.4  
34.8  
32.3  
28.5  
0.086  
0.139  
0.161  
0.164  
0.166  
0.162  
0.148  
0.134  
0.117  
0.107  
0.106  
0.110  
0.127  
0.146  
0.164  
62.7  
43.0  
30.5  
21.2  
14.9  
12.3  
13.5  
15.4  
19.5  
25.1  
35.2  
46.3  
55.4  
3.2  
0.936  
0.792  
0.689  
0.648  
0.630  
0.603  
0.578  
0.559  
0.557  
0.552  
0.538  
0.547  
0.575  
0.589  
0.588  
15.4  
26.4  
35.5  
42.3  
46.3  
49.8  
54.9  
61.5  
68.5  
75.6  
84.3  
94.8  
103.4  
110.3  
118.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
3.0  
109.7  
128.9  
144.3  
156.5  
164.7  
172.6  
177.9  
170.1  
164.8  
160.3  
156.2  
152.2  
149.2  
VCE = 3 V, IC = 3 mA, ZO = 50 Ω  
Frequency  
(GHz)  
S11  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
0.782  
0.669  
0.639  
0.616  
0.614  
0.629  
0.633  
0.617  
0.618  
0.642  
0.663  
0.676  
0.684  
0.698  
0.716  
65.7  
109.9  
134.2  
150.6  
163.0  
171.7  
177.4  
176.2  
7.726  
5.283  
3.921  
3.139  
2.608  
2.1
136
1
8  
41.4  
39.2  
36.2  
31.1  
26  
0.128  
0.132  
0.137  
0.148  
0.162  
0.180  
0.195  
0.205  
4  
32.3  
30.0  
30.2  
32.5  
37.3  
42.2  
46.7  
49.0  
51.7  
54.2  
56.7  
59.3  
60.7  
0.804  
0.563  
0.445  
0.392  
0.358  
0.331  
0.309  
0.296  
0.289  
0.285  
0.280  
0.292  
0.314  
0.330  
0.341  
29.6  
43.8  
52.1  
56.7  
59.1  
61.7  
66.8  
73.3  
79.9  
87.4  
97.0  
107.5  
115.4  
122.1  
129.2  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
3.0  
168.4  
162.
1
VCE = 3 V, IC = 5 mA, ZO = 50
Frequency  
(GHz)  
S11  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
3.0  
0.693  
0.610  
0.588  
0.575  
0.582  
0.600  
0.603  
0.590  
0.594  
0.619  
0.638  
0.651  
0.660  
0.677  
0.694  
81.4  
125.1  
146.4  
160.7  
171.3  
178.3  
177.2  
171.4  
164.4  
159.2  
155.9  
152.8  
149.8  
147.0  
145.3  
10.462  
6.572  
4.723  
3.713  
3.072  
2.566  
2.253  
1.997  
1.754  
1.563  
1.430  
1.352  
1.268  
1.149  
1.071  
129.2  
105.9  
92.0  
84.4  
78.2  
71.8  
65.9  
61.8  
57.5  
53.1  
47.6  
43.4  
41.3  
38.5  
33.6  
0.063  
0.083  
0.093  
0.098  
0.106  
0.116  
0.127  
0.135  
0.144  
0.153  
0.167  
0.182  
0.201  
0.214  
0.222  
50.6  
39.0  
37.7  
38.5  
41.1  
43.9  
47.9  
51.6  
54.6  
55.4  
55.7  
56.3  
57.3  
58.8  
59.1  
0.699  
0.442  
0.334  
0.284  
0.250  
0.226  
0.209  
0.199  
0.195  
0.192  
0.194  
0.211  
0.231  
0.249  
0.264  
39.3  
54.7  
62.8  
67.1  
69.7  
73.2  
79.7  
86.9  
94.5  
103.2  
114.4  
124.6  
131.6  
137.8  
144.5  
6
Data Sheet PU10100EJ01V0DS  
2SC5432  
VCE = 3 V, IC = 7 mA, ZO = 50 Ω  
Frequency  
(GHz)  
S11  
S21  
S12  
S22  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
3.0  
0.630  
0.576  
0.561  
0.554  
0.565  
0.586  
0.588  
0.577  
0.583  
0.607  
0.625  
0.639  
0.649  
0.665  
0.681  
95.3  
136.3  
155.0  
167.6  
176.8  
177.4  
173.6  
168.2  
161.8  
157.1  
154.1  
151.3  
148.5  
145.8  
144.3  
12.557  
7.443  
5.246  
4.082  
3.362  
2.865  
2.459  
2.176  
1.908  
1.700  
1.551  
1.468  
1.382  
1.256  
1.171  
123.1  
101.8  
89.3  
82.7  
77.2  
71.2  
66.0  
62.2  
58.2  
54.2  
48.8  
44.7  
42.7  
40.1  
35.5  
0.055  
0.071  
0.082  
0.091  
0.103  
0.115  
0.130  
0.142  
0.152  
0.163  
0.178  
0.194  
0.214  
0.227  
0.235  
47.9  
41.3  
42.8  
46.0  
49.4  
51.8  
54.6  
56.9  
58.9  
58.5  
57.8  
57.4  
57.8  
8.5  
0.609  
0.359  
0.264  
0.218  
0.187  
0.166  
0.154  
0.150  
0.149  
0.150  
0.161  
0.181  
0.199  
0.219  
0.236  
47.7  
64.2  
72.8  
77.8  
81.9  
87.6  
95.8  
104.6  
113.3  
123.7  
134.8  
143.4  
148.6  
153.9  
159.5  
VCE = 3 V, IC = 10 mA, ZO = 50 Ω  
Frequency  
(GHz)  
S11  
S21  
S22  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
MAG.  
ANG.  
(deg.)  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
2.6  
2.8  
3.0  
0.575  
0.548  
0.540  
0.539  
0.554  
0.574  
0.574  
0.565  
0.573  
0.598  
0.615  
0.628  
0.639  
0.655  
0.671  
108.7  
145.7  
161.8  
173.0  
179.0  
174.1  
170.8  
165.8  
159.7  
155.
1
14.215  
8.064  
5.617  
4.354  
3.577  
3.
118
7  
45.8  
43.9  
41.4  
36.9  
33  
0.148  
0.160  
0.172  
0.186  
0.204  
0.223  
0.236  
0.243  
8  
49.0  
53.0  
55.6  
57.3  
58.8  
60.3  
61.6  
60.7  
59.3  
58.4  
58.3  
58.7  
58.1  
0.524  
0.295  
0.213  
0.173  
0.148  
0.132  
0.128  
0.128  
0.131  
0.137  
0.154  
0.176  
0.195  
0.214  
0.233  
55.9  
73.7  
84.1  
90.5  
97.4  
105.9  
115.7  
124.7  
134.0  
144.8  
154.6  
160.5  
164.7  
168.6  
172.8  
7
Data Sheet PU10100EJ01V0DS  
2SC5432  
PACKAGE DIMENSIONS  
FLAT-LEAD 3-PIN THIN-TYPE ULTRA SUPER MINIMOLD (UNIT: mm)  
1.2 ± 0.05  
0.8 ± 0.1  
2
3
1
PI
8
Data Sheet PU10100EJ01V0DS  
2SC5432  
The information in this document is current as of February, 2002. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or  
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all  
products and/or types are available in every country. Please check with an NEC sales representative  
for availability and additional information.  
No part of this document may be copied or reproduced in any foy any means without prior  
written consent of NEC. NEC assumes no responsibility for any erropear in this document.  
NEC does not assume any liability for infringement of patents, copectual property rights of  
third parties by or arising from the use of NEC semiconductor cument or any other  
liability arising from the use of such products. No license, eis granted under any  
patents, copyrights or other intellectual property rights of N
Descriptions of circuits, software and other related infre provided for illustrative  
purposes in semiconductor product operation aThe incorporation of these  
circuits, software and information in the desigt shall be done under the full  
responsibility of customer. NEC assumes no es incurred by customers or third  
parties arising from the use of these circuits
While NEC endeavours to enhance the qNEC semiconductor products, customers  
agree and acknowledge that the possnnot be eliminated entirely. To minimize  
risks of damage to property oto persons arising from defects in NEC  
semiconductor products, custocient safety measures in their design, such as  
redundancy, fire-containment
NEC semiconductor produlowing three quality grades:  
"Standard", "Special" ac" quality grade applies only to semiconductor products  
developed based on uality assurance program" for a specific application. The  
recommended apor product depend on its quality grade, as indicated below.  
Customers must chof each semiconductor product before using it in a particular  
application.  
"Standard": Computers, oent, communications equipment, test and measurement equipment, audio  
and visual equihome electronic appliances, machine tools, personal electronic equipment  
and industrial robos  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd.  
and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4-0110  
9
Data Sheet PU10100EJ01V0DS  
2SC5432  
Business issue  
NEC Compound Semiconductor Devices, Ltd.  
5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: salesinfo@csd-nec.com  
NEC Compound Semiconductor Devices Hong Kong Limited  
Hong Kong Head Office  
Taipei Branch Office  
Korea Branch Office  
TEL: +852-3107-7303  
FAX: +852-3107-7309  
TEL: +886-2-8712-0478 FAX: +886-2-2545-3859  
TEL: +82-2-528-0301  
FAX: +82-2-528-0302  
NEC Electron Devices European Operations  
http://www.nec.de/  
TEL: +49-211-6503-101 FAX: +49-211-6503-487  
California Eastern Laboratories, Inc.  
http://www.cel.com/  
TEL: +1-408-988-3500 FAX: +1-408-988-0279  
Technical issue  
NEC Compound Semiconductor Devices, Ltd.  
http://www.csd-nec.com/  
Sales Engineering Group, Sales Division  
E-mail: techinfo@csd-nec.com FAX: +81-44-435-1918  
0110  

相关型号:

2SC5432-T1-FB

RF SMALL SIGNAL TRANSISTOR
RENESAS

2SC5432-T1EB

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC

2SC5432-T1FB

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC

2SC5432-T1FB-A

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC

2SC5432EB-A

TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-416VAR
NEC

2SC5432EB-T1

TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-416VAR
NEC

2SC5432EB-T1-A

TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-416VAR
NEC

2SC5432FB-T1-A

TRANSISTOR,BJT,NPN,12V V(BR)CEO,100MA I(C),SOT-416VAR
NEC

2SC5433

NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
NEC

2SC5433-A

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
RENESAS

2SC5433-EB

RF Small Signal Bipolar Transistor, 0.065A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-3
NEC