2SD1367-BC [RENESAS]
2000mA, 16V, NPN, Si, SMALL SIGNAL TRANSISTOR, UPAK-3;
| 型号： | 2SD1367-BC |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 2000mA, 16V, NPN, Si, SMALL SIGNAL TRANSISTOR, UPAK-3 |
| 文件： | 总8页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
2SD1367
Silicon NPN Epitaxial
ADE-208-1147 (Z)
1st. Edition
Mar. 2001
Application
•
•
Low frequency power amplifier
Complementary pair with 2SB1001
Outline
UPAK
1
2
3
4
1. Base
2. Collector
3. Emitter
4. Collector (Flange)
2SD1367
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
20
VCEO
16
V
VEBO
6
V
IC
2
A
1
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
iC(peak)
PC*2
Tj
*
3
A
1
W
°C
°C
150
Tstg
–55 to +150
Notes: 1. PW ≤ 10 ms, Duty cycle ≤ 20%.
2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
20
16
6
—
—
V
IC = 10 µA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
—
V
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
Emitter to base breakdown
voltage
V(BR)EBO
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
ICBO
IEBO
hFE*1
—
0.1
0.1
500
0.3
µA
µA
VCB = 16 V, IE = 0
—
VEB = 5 V, IC = 0
100
—
—
VCE = 2 V, IC = 0.1 A, Pulse
IC = 1 A, IB = 0.1 A, Pulse
Collector to emitter saturation VCE(sat)
voltage
0.15
V
V
Base to emitter saturation
voltage
VBE(sat)
—
0.9
1.2
IC = 1 A, IB = 0.1 A, Pulse
Gain bandwidth product
fT
—
—
100
20
—
—
MHz
pF
VCE = 2 V, IC = 10 mA
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Note: 1. The 2SD1367 is grouped by hFE as follows.
Mark
BA
BB
BC
hFE
100 to 200 160 to 320
250 to 500
2SD1367
Typical Output Characteristics
Maximum Collector Dissipation Curve
100
80
60
40
20
1.2
0.8
0.4
0.2
0.25
0.2
0.15
0.1
0.05 mA
IB
= 0
6
0
2
4
8
10
0
50
100
150
Collector to Emitter Voltage VCE (V)
Ambient Temperature Ta (°C)
Typical Transfer Characteristics
VCE = 2 V
Typical Output Characteristics
1,000
2.0
300
100
1.6
1.2
0.8
0.4
Ta = 75°C
25
30
10
–25
3
1
IB
0.8
Collector to Emitter Voltage VCE (V)
= 0
0
0.4
1.2
1.6
2.0
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage VBE (V)
2SD1367
DC Current Transfer Ratio vs.
Collector Current
Saturation Voltage vs. Collector Current
VBE (sat)
10,000
3.0
1.0
30,00
1,000
Pusle
VCE = 2 V
Ta = 75°C 25
0.3
0.1
lC = 10 lB
300
100
–25
0.03
0.01
VCE (sat)
30
10
1
0.003
3
10
30
100 300 1,000
3
10
30
100 300 1,000 3,000
Collector Current IC (mA)
Collector Current IC (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
1,000
f = 1 MHz
I
E = 0
300
100
30
10
0.1
0.3
1.0
3
10
Collector to Base Voltage VCB (V)
2SD1367
Package Dimensions
As of January, 2001
Unit: mm
4.5 ± 0.1
1.5 ± 0.1
0.44 Max
1.8 Max
(1.5)
φ
1
0.53 Max
0.48 Max
0.44 Max
1.5
1.5
3.0
Hitachi Code
JEDEC
UPAK
—
EIAJ
Conforms
0.050 g
Mass (reference value)
2SD1367
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
: http://semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://sicapac.hitachi-asia.com
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
D-85622 Feldkirchen, Munich
World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
相关型号：
2SD1367BATL
Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3
RENESAS
2SD1367BAUR
Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3
RENESAS
2SD1367BBTL
Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3
HITACHI
2SD1367BBTL
Small Signal Bipolar Transistor, 2A I(C), 16V V(BR)CEO, 1-Element, NPN, Silicon, UPAK-3
RENESAS
©2020 ICPDF网 联系我们和版权申明