2SD2402-AZ [RENESAS]
Small Signal Bipolar Transistors, POMM, /;
| 型号： | 2SD2402-AZ |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Small Signal Bipolar Transistors, POMM, / |
| 文件： | 总6页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR
2SD2402
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
PACKAGE DRAWING (UNIT: mm)
The 2SD2402 is
a transistor featuring high current
capacitance in small dimension. This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
• High current capacitance
• Low collector saturation voltage
• Complementary transistor with 2SB1571
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
VCBO
Conditions
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
50
30
VCEO
V
6.0
5.0
VEBO
V
IC(DC)
A
PW ≤ 10 ms
IC(pulse)
8.0
A
duty cycle ≤ 50 %
Base current (DC)
IB(DC)
0.2
0.4
A
A
PW ≤ 10 ms
Base current (pulse)
IB(pulse)
duty cycle ≤ 50 %
16 cm2 × 0.7 mm ceramic board mounted
Total power dissipation
Junction temperature
Storage temperature
PT
Tj
2.0
150
W
°C
°C
−55 to +150
Tstg
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16155EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
2SD2402
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Symbol
ICBO
Conditions
VCB = 50 V, IE = 0
MIN.
TYP.
MAX.
100
Unit
nA
nA
−
IEBO
VEB = 6.0 V, IC = 0
100
hFE1
hFE2
VBE
VCE = 1.0 V, IC = 1.0 A
VCE = 1.0 V, IC = 2.0 A
VCE = 1.0 V, IC = 0.1 A
IC = 3.0 V, IB = 0.15 A
IC = 5.0 V, IB = 0.25 A
IC = 3.0 V, IB = 0.15 A
VCE = 10 V, IE = −0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
80
−
DC current gain
100
600
200
650
140
230
0.88
170
60
400
700
300
500
1.2
DC base voltage
mV
mV
mV
V
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Turn-on time
VCE(sat)1
VCE(sat)2
VBE(sat)
fT
MHz
pF
ns
Cob
ton
IC = 2.0 A, VCC= 10 V
IB1 = −IB2 = 0.1 A
RL = 500 Ω
275
485
45
Storage time
tstg
ns
Fall time
tf
ns
hFE CLASSIFICATION
Marking
hFE2
EX
EY
EZ
100 to 200
160 to 320
200 to 400
2
Data Sheet D16155EJ2V0DS
2SD2402
TYPICAL CHARACTERISTICS (Ta = 25°C)
3
Data Sheet D16155EJ2V0DS
2SD2402
4
Data Sheet D16155EJ2V0DS
2SD2402
[MEMO]
5
Data Sheet D16155EJ2V0DS
2SD2402
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
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liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
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responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
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M8E 00. 4
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