2SD2403-GZ-AZ [RENESAS]
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin;型号: | 2SD2403-GZ-AZ |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin |
文件: | 总6页 (文件大小:137K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
SILICON TRANSISTOR
2SD2403
NPN SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
PACKAGE DRAWING (UNIT: mm)
The 2SD2403 is
a transistor featuring high current
capacitance in small dimension. This transistor is ideal for
DC/DC converters and motor drivers.
FEATURES
• High current capacitance
• Low collector saturation voltage
• Complementary transistor with 2SB1572
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
VCBO
Conditions
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
80
60
VCEO
V
6.0
3.0
VEBO
V
IC(DC)
A
PW ≤ 10 ms
IC(pulse)
5.0
A
duty cycle ≤ 50 %
Base current (DC)
IB(DC)
0.2
0.4
A
A
PW ≤ 10 ms
Base current (pulse)
IB(pulse)
duty cycle ≤ 50 %
16 cm2 × 0.7 mm ceramic board mounted
Total power dissipation
Junction temperature
Storage temperature
PT
Tj
2.0
150
W
°C
°C
−55 to +150
Tstg
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16156EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
2002
©
2SD2403
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Symbol
Iꢀꢁꢂ
Iꢃꢁꢂ
Conditions
Vꢀꢁ = 80 V, Iꢃ = 0
MIN.
TYP.
MAX.
100
Unit
nA
nA
−
Vꢃꢁ = 6.0 V, Iꢀ = 0
100
hꢄꢃꢅ
hꢄꢃꢆ
Vꢁꢃ
Vꢀꢃ = 2.0 V, Iꢀ = 0.1 A
Vꢀꢃ = 2.0 V, Iꢀ = 1.0 A
Vꢀꢃ = 2.0 V, Iꢀ = 0.1 A
Iꢀ = 2.0 A, Iꢁ = 0.1 A
Iꢀ = 3.0 A, Iꢁ = 0.15 A
Iꢀ = 2.0 A, Iꢁ = 0.1 A
Vꢀꢃ = 10 V, Iꢃ = −0.3 A
Vꢀꢁ = 10 V, Iꢃ = 0, f = 1 MHz
80
−
DC current gain
100
630
200
670
150
210
0.89
130
30
400
730
300
500
1.2
DC base voltage
mV
mV
mV
V
Collector saturation voltage
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Turn-on time
Vꢀꢃꢇꢈꢉꢊꢋꢅ
Vꢀꢃꢇꢈꢉꢊꢋꢆ
Vꢁꢃꢇꢈꢉꢊꢋ
fꢌ
MHz
pF
ns
Cꢍꢎ
tꢍꢏ
Iꢀ = 1.0 A, Vꢀꢀ= 10 V
Iꢁꢅ = −Iꢁꢆ = 0.1 A
Rꢒ = 5.0 Ω
150
652
40
Storage time
tꢈꢊꢐ
ns
Fall time
tꢑ
ns
hFE CLASSIFICATION
Marking
GX
GY
GZ
hꢄꢃꢆ
100 to 200
160 to 320
200 to 400
2
Data Sheet D16156EJ2V0DS
2SD2403
TYPICAL CHARACTERISTICS (Ta = 25°C)
3
Data Sheet D16156EJ2V0DS
2SD2403
4
Data Sheet D16156EJ2V0DS
2SD2403
[MEMO]
5
Data Sheet D16156EJ2V0DS
2SD2403
•
The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
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•
•
•
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M8E 00. 4
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