2SD560MB-AZ [RENESAS]

TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,5A I(C),TO-220AB;
2SD560MB-AZ
型号: 2SD560MB-AZ
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

TRANSISTOR,BJT,DARLINGTON,NPN,100V V(BR)CEO,5A I(C),TO-220AB

文件: 总8页 (文件大小:236K)
中文:  中文翻译
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To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  
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DATA SHEET  
SILICON POWER TRANSISTOR  
2SD560  
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)  
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING  
ORDERING INFORMATION  
The 2SD560 is a mold power transistor developed for low-  
frequency power amplifiers and low-speed switching. This transistor is  
ideal for direct driving from the IC output of devices such as pulse  
motor drivers and relay drivers, and PC terminals.  
Ordering Name  
2SD560  
Package  
TO-220AB  
FEATURES  
(TO-220AB)  
• C-to-E reverse diode inserted  
• Low collector saturation voltage  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Parameter  
Symbol  
VCBO  
Conditions  
Ratings  
150  
100  
7.0  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (pulse)  
VCEO  
V
VEBO  
V
5.0  
IC(DC)  
A
PW 10 ms,  
8.0  
IC(pulse)  
A
duty cycle 50%  
Base current (DC)  
IB(DC)  
PT  
0.5  
30  
A
TC = 25°C  
TA = 25°C  
Total power dissipation  
W
W
°C  
°C  
1.5  
Junction temperature  
Storage temperature  
Tj  
150  
55 to +150  
Tstg  
INTERNAL EQUIVALENT CIRCUIT  
1. Base  
2. Collector  
3. Emitter  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D14863EJ3V0DS00 (3rd edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©
2SD560  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
Parameter  
Collector cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 100 V, IE = 0 A  
VCE = 2.0 V, IC = 3.0 ANote  
VCE = 2.0 V, IC = 5.0 ANote  
IC = 3.0 A, IB = 3.0 mANote  
IC = 3.0 A, IB = 3.0 mANote  
MIN.  
TYP.  
MAX.  
1.0  
Unit  
µA  
hFE1  
hFE2  
VCE(sat)  
VBE(sat)  
ton  
2,000  
500  
6,000  
15,000  
Collector saturation voltage  
Base saturation voltage  
Turn-on time  
0.9  
1.6  
1.0  
3.5  
1.2  
1.5  
2.0  
V
V
IC = 3.0 A, RL = 16.7 ,  
IB1 = IB2 = 3.0 mA, VCC 50 V  
Refer to the test circuit.  
µs  
µs  
µs  
Storage time  
tstg  
Fall time  
tf  
Note Pulse test PW 350 µs, duty cycle 2%  
hFE CLASSIFICATION  
Marking  
hFE1  
MB  
LB  
KB  
2,000 to 5,000  
3,000 to 7,000  
5,000 to 15,000  
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT  
Base current  
waveform  
Collector current  
waveform  
2
Data Sheet D14863EJ3V0DS  
2SD560  
TYPICAL CHARACTERISTICS (TA = 25°C)  
Heatsink’: 2.0 mm  
Aluminum, bpard  
No insulating boad  
Silicon brease coating  
Horizontal level  
With infinite heatsink (Tc = 25°C)  
Without heatsink  
Single pulse  
Temperature T (°C)  
Collector to Emitter Voltage VCE (V)  
Pulse test  
Collector Current IC (A)  
Collector to Emitter Voltage VCE (V)  
Pulse test  
Collector Current IC (A)  
3
Data Sheet D14863EJ3V0DS  
2SD560  
PACKAGE DRAWING (UNIT: mm)  
1. Base  
2. Collector  
3. Emitter  
4. Fin (collector)  
4
Data Sheet D14863EJ3V0DS  
2SD560  
[MEMO]  
5
Data Sheet D14863EJ3V0DS  
2SD560  
The information in this document is current as of July, 2001. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products  
and/or types are available in every country. Please check with an NEC sales representative for  
availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  

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