2SD788 [RENESAS]
Silicon NPN Epitaxial; NPN硅外延
| 型号： | 2SD788 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon NPN Epitaxial |
| 文件： | 总6页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD788
Silicon NPN Epitaxial
REJ03G0771-0200
(Previous ADE-208-1139)
Rev.2.00
Aug.10.2005
Application
•
•
Low frequency power amplifier
Complementary pair with 2SB738 and 2SB739
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
Emitter
llector
Absolute Maximum Ra
(Ta = 25°C)
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
20
Collector to emitter volta
Emitter to base voltage
Collector current
20
V
6
V
2
0.9
A
Collector power dissipation
Junction temperature
Storage temperature
PC
W
°C
°C
Tj
150
Tstg
–50 to +150
Rev.2.00 Aug 10, 2005 page 1 of 5
2SD788
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min
20
20
6
Typ
—
Max
—
Unit
V
Test conditions
IC = 10 µA, IE = 0
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
—
—
V
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 16 V, IE = 0
VEB = 6 V, IC = 0
—
—
V
—
—
2
µA
µA
Emitter cutoff current
IEBO
—
—
0.2
500
0.3
—
1
DC current transfer ratio
hFE
*
160
—
—
VCE = 2 V, IC = 0.1 A
IC = 1 A, IB = 0.1 A
Collector to emitter saturation voltage
Gain bandwidth product
VCE(sat)
fT
—
V
—
100
MHz VCE = 2 V,
IC = 10 mA
Collector output capacitance
Cob
—
20
—
pF
VCB = 10 V, IE = 0,
f = 1 MHz
Note: 1. The 2SD788 is grouped by hFE as follows.
C
D
160 to 320
250 to 500
Rev.2.00 Aug 10, 2005 page 2 of 5
2SD788
Main Characteristics
Typical Output Characteristics
Maximum Collector Dissipation Curve
100
80
60
40
20
1.2
0.8
0.4
0.15
0.05 mA
IB = 0
50
100
150
2
4
6
8
10
0
0
Ambient Temperature Ta (°C)
Collemitter Voltage VCE (V)
racteristics
Typical Output Characteristics
2.0
1.6
1.2
0.8
0.4
20
15
10
2 V
a = 75°C
5 mA
10
25
Ð25
3
1
0.4
0
0
0.2
0.4
0.6
0.8
1.0
Collector
Base to Emitter Voltage VBE (V)
DC .
Saturation Voltage vs. Collector Current
3.0
10,000
Pulse
VCE = 2 V
VBE(sat)
1.0
3,000
1,000
Ta = 75°C
25
0.3
0.1
IC = 10 IB
300
100
–25
0.03
0.01
VCE(sat)
30
10
0.003
1
3
10
30
100 300 1,000
3
10
30
100 300 1,000 3,000
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SD788
Collector Output Capacitance vs.
Collector to Base Voltage
1,000
f = 1 MHz
IE = 0
300
100
30
10
0.1
0.3
1.0
3
10
Collector to Base Voltage VCB (V)
Rev.2.00 Aug 10, 2005 page 4 of 5
2SD788
Package Dimensions
JEITA Package Code
SC-51
RENESAS Code
PRSS0003DC-A
Package Name
MASS[Typ.]
0.35g
Unit: mm
TO-92 Mod / TO-92 ModV
4.8 0.4
3.8 0.4
0.65 0.1
0.75 Max
0.60 Max
0.55 Max
0.5 Max
1.27
2.54
Ordering Information
Part Name
Shipping Container
ox, Radial Taping
2SD788CTZ-E
2SD788DTZ-E
2500
Note: For some grades, prease contact the Renesas sales office to check the state of
production before
Rev.2.00 Aug 10, 2005 page 5 of 5
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Colophon .3.0
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