2SJ243-T2-A [RENESAS]
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,100MA I(D),SC-75;
| 型号： | 2SJ243-T2-A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,100MA I(D),SC-75 |
| 文件： | 总7页 (文件大小：854K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Elnics Corporation
Issued by: Renesas Electronics Corporation (http://wwesas.com)
Send any inquiries to http://www.renesas.com/inqu
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ243
P-CHANNEL MOS FET
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SJ243 is a P-channel vertical type MOS FET that is driven at
2.5 V.
+0.1
+0.1
0.3
–0
0.15
–0.05
Because this MOS FET can be driven on a low voltage and because it
is not necessary to consider the drive current, the 2SJ243 is ideal for
driving the actuator of power-saving systems, such as VCR cameras
and headphone stereo systems.
0 to 0.1
Moreover, the 2SJ243 is housed in a super small mini-mold package
so that it can help increase the mounting density on the printed circuit
board and lower the mounting cost, contributing to miniaturization of the
application systems.
2
1
+0.1
–0
0.2
0.5
0.6
0.5
0.75 0.05
FEATURES
1.0
1.6 0.1
• Small mounting area: about 60% of the conventional mi
package (SC-70)
• Can be directly driven by 3-V IC
• Can be automatically mounted
1: Source
2: Gate
3: Drain
ORDERING INFORMATION
EQUIVALENT CIRCUIT
PART NUMBER
PACKA
2SJ243
SC-)
Drain
Marking: A1
Body
Diode
Gate
ABSOLUTE MAXIMUM RAS (TA = 25°C)
Drain to Source Voltage (V)
Gate to Source Voltage 0 V)
Drain Current (DC)
VDSS
VGSS
ID(DC)
ID(pulse)
PT
−30
m 7.0
m 100
m 200
200
V
V
mA
mA
mW
°C
Gate
Protection
Diode
Source
Drain Current (pulse) Note1
Total Power Dissipation Note2
Channel Temperature
Tch
150
Storage Temperature
Tstg
−55 to +150
°C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D11215EJ2V0DS00 (2nd edition)
The mark
shows major revised points.
Date Published November 2004 NS CP(K)
Printed in Japan
1996
2SJ243
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = −30 V, VGS = 0 V
MIN. TYP. MAX. UNIT
−1.0
µA
µA
V
IGSS
VGS = m 5.0 V, VDS = 0 V
VDS = −3.0 V, ID = −10 µA
VDS = −3.0 V, ID = −10 mA
VGS = −2.5 V, ID = −1.0 mA
VGS = −4.0 V, ID = −10 mA
VDS = –5.0 V
m 0.1 m 3.0
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
−1.6
−1.9
30
−2.3
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
20
mS
Ω
55
100
25
20
Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
16
pF
pF
pF
ns
ns
ns
ns
Coss
VGS = 0 V
13
Crss
f = 1 MHz
2.0
10
td(on)
VDD = −5.0 V, ID = −10 mA
VGS = −5.0 V
tr
40
Turn-off Delay Time
Fall Time
td(off)
RG = 10 Ω
130
80
tf
Note Pulsed: PW ≤ 350 µs, Duty Cycle 2%
TEST CIRCUIT SWITCHING TIME
D.U.T.
V
GS(−)
R
L
90%
V
GS
10%
Wave Form
0
RG
PG.
VDD
%
ID
(
90%
10%
ID
V
0
GS(−)
0%
I
D
Wav
td(on)
tr
td(off)
t
f
τ
ton
toff
τ = 1
µ
s
Duty Cycle ≤ 1%
2
Data Sheet D11215EJ2V0DS
2SJ243
TYPICAL CHARACTERISTICS (TA = 25°C)
3
Data Sheet D11215EJ2V0DS
2SJ243
4
Data Sheet D11215EJ2V0DS
2SJ243
•
The information in this document is current as of November, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any ms without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibilitny errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, ghts or other intellectual
property rights of third parties by or arising from the use of NEC Electroniucts listed in this document
or any other liability arising from the use of such products. No licepress, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rigEC Electronics or others.
• Descriptions of circuits, software and other related information in cument are provided for illustrative
purposes in semiconductor product operation and applicaamples. The incorporation of these
circuits, software and information in the design of a custequipment shall be done under the full
responsibility of the customer. NEC Electronics assumresponsibility for any losses incurred by
customers or third parties arising from the use of these s, software and information.
• While NEC Electronics endeavors to enhance the reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possdefects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injluding death) to persons arising from defects in NEC
Electronics products, customers must inte sufficient safety measures in their design, such as
redundancy, fire-containment and anti-faatures.
• NEC Electronics products are classio the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade anly to NEC Electronics products developed based on a customer-
designated "quality assurancam" for a specific application. The recommended applications of an NEC
Electronics product depenquality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics pefore using it in a particular application.
"Standard": Compuce equipment, communications equipment, test and measurement equipment, audio
and vquipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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