概述
规格参数
数据手册2SJ292-E 概述
Pch Single Power MOSFET -60V -30A 43mohm TO-220AB 功率场效应晶体管
2SJ292-E 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Not Recommended |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| 风险等级： | 5.21 | 外壳连接： | DRAIN |
| 配置： | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压： | 60 V |
| 最大漏极电流 (ID)： | 30 A | 最大漏源导通电阻： | 0.06 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码： | TO-220AB |
| JESD-30 代码： | R-PSFM-T3 | JESD-609代码： | e2 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 3 | 工作模式： | ENHANCEMENT MODE |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | FLANGE MOUNT | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | P-CHANNEL | 最大脉冲漏极电流 (IDM)： | 120 A |
| 认证状态： | Not Qualified | 表面贴装： | NO |
| 端子面层： | TIN COPPER | 端子形式： | THROUGH-HOLE |
| 端子位置： | SINGLE | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 晶体管应用： | SWITCHING | 晶体管元件材料： | SILICON |
| Base Number Matches： | 1 |
2SJ292-E 数据手册
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PDF下载2SJ292
Silicon P-Channel MOS FET
November 1996
Application
High speed power switching
Features
•
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for switching regulator, DC-DC converter
Avalanche ratings
Outline
TO-220AB
1
D
2
3
1. Gate
2. Drain
G
(Flange)
3. Source
S
2SJ292
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VDSS
Ratings
–60
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
±20
V
ID
–30
A
1
Drain peak current
ID(pulse)
IDR
IAP*3
EAR*3
*
–120
–30
A
Body to drain diode reverse drain current
Avalanche current
A
–30
A
Avalanche energy
77
mJ
W
°C
°C
Channel dissipation
Pch*2
75
Channel temperature
Storage temperature
Tch
150
Tstg
–55 to +150
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SJ292
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
V(BR)GSS
IGSS
–60
—
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown
voltage
±20
—
—
V
IG = ±200 µA, VDS = 0
Gate to source leak current
—
—
—
—
±10
µA
µA
V
VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS
—
–250
–2.25
VDS = –50 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
–1.0
—
ID = –1 mA, VDS = –10 V
ID = –15 A, VGS = –10 V*1
Static drain to source on state RDS(on)
resistance
0.033 0.043
Ω
—
17
—
0.045 0.06
Ω
ID = –15 A, VGS = –4 V*1
ID = –15 A, VDS = –10 V*1
Forward transfer admittance
Input capacitance
|yfs|
25
—
—
S
Ciss
3300
pF
VDS = –10 V, VGS = 0,
f = 1 MHz
Output capacitance
Coss
—
—
—
1500
480
30
—
—
—
pF
pF
ns
Reverse transfer capacitance Crss
Turn-on delay time
td(on)
ID = –15 A, VGS = –10 V,
RL = 2 Ω
Rise time
tr
—
—
—
—
170
500
390
–1.5
—
—
—
—
ns
ns
ns
V
Turn-off delay time
Fall time
td(off)
tf
Body to drain diode forward
voltage
VDF
IF = –30 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
200
—
ns
IF = –30 A, VGS = 0,
diF/dt = 50 A/µs
Note 1. Pulse test
See characteristic curves of 2SJ280
3
2SJ292
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
4
2SJ292-E 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| 2SJ293 | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220FN | 获取价格 |
|
| 2SJ293-E | RENESAS | 15A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FM, 3 PIN | 获取价格 |
|
| 2SJ294 | HITACHI | Silicon P Channel MOS FET | 获取价格 |
|
| 2SJ294-E | RENESAS | 20A, 60V, 0.095ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FM, 3 PIN | 获取价格 |
|
| 2SJ295 | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220FN | 获取价格 |
|
| 2SJ296(L) | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-262AA | 获取价格 |
|
| 2SJ296(S) | ETC | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-263AB | 获取价格 |
|
| 2SJ296(S)TL | HITACHI | 15A, 60V, 0.12ohm, P-CHANNEL, Si, POWER, MOSFET | 获取价格 |
|
| 2SJ296(S)TR | HITACHI | Power Field-Effect Transistor, 15A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 获取价格 |
|
| 2SJ296L | ETC | 获取价格 |
|
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