2SJ408L [RENESAS]
50A, 60V, 0.028ohm, P-CHANNEL, Si, POWER, MOSFET, HDPAK-3;
| 型号： | 2SJ408L |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 50A, 60V, 0.028ohm, P-CHANNEL, Si, POWER, MOSFET, HDPAK-3 开关 脉冲 晶体管 |
| 文件： | 总10页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SJ408(L), 2SJ408(S)
Silicon P-Channel MOS FET
November 1996
Application
High speed power switching
Features
•
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for Switching regulator, DC - DC converter
Avalanche Ratings
Outline
4
HDPAK
4
3
1
2
D
1
2
3
G
1. Gate
2. Drain
3. Source
4. Drain
S
2SJ408(L), 2SJ408(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VDSS
Ratings
–60
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
VGSS
±20
V
ID
–50
A
1
Drain peak current
ID(pulse)
IDR
IAP*3
EAR*3
*
–200
–50
A
Body to drain diode reverse drain current
Avalanche current
A
–50
A
Avalanche energy
214
mJ
W
°C
°C
Channel dissipation
Pch*2
100
Channel temperature
Storage temperature
Tch
150
Tstg
–55 to +150
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
2
2SJ408(L), 2SJ408(S)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
V(BR)GSS
IGSS
–60
—
—
V
ID = –10 mA, VGS = 0
Gate to source breakdown
voltage
±20
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
—
—
—
—
±10
µA
µA
V
VGS = ±16 V, VDS = 0
VDS = –50 V, VGS = 0
ID = –1 mA, VDS = –10 V
Zero gate voltage drain current IDSS
Gate to source cutoff voltage VGS(off)
—
–250
–2.25
–1.0
—
Static drain to source on state RDS(on)
resistance
0.015 0.02
Ω
ID = –25 A
VGS = –10 V*1
—
30
—
0.02
50
0.028
—
Ω
ID = –25 A
VGS = –4 V*1
Forward transfer admittance
Input capacitance
|yfs|
S
ID = –25 A
VDS = –10 V*1
Ciss
8200
—
pF
VDS = –10 V
VGS = 0
f = 1 MHz
Output capacitance
Coss
—
—
—
3650
750
55
—
—
—
pF
pF
ns
Reverse transfer capacitance Crss
Turn-on delay time
td(on)
ID = –25 A
VGS = –10 V
RL = 1.2 Ω
Rise time
tr
—
—
—
—
340
—
—
—
—
ns
ns
ns
V
Turn-off delay time
Fall time
td(off)
tf
1150
620
Body to drain diode forward
voltage
VDF
–1.0
IF = –50 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
250
—
ns
IF = –50 A, VGS = 0,
diF/dt = 50 A/µs
Note 1. Pulse Test
3
2SJ408(L), 2SJ408(S)
Power vs. Temperature Derating
150
100
50
0
50
100
150
Case Temperature Tc (°C)
Maximum Safe Operation Area
–1000
–300
–100
–30
Operation in
this area is
limited by R
–10
DS(on)
–3
–1
Ta = 25 °C
–20
–0.5 –1 –2
–5 –10
–50 –100
Drain to Source Voltage
V
(V)
DS
Typical Output Characteristics
–100
–80
–60
–40
–20
Pulse Test
–10 V
–6 V
–4 V
–3.5 V
–3 V
V
= –2.5 V
–8
GS
0
–2
–4
–6
–10
(V)
Drain to Source Voltage
V
DS
4
2SJ408(L), 2SJ408(S)
Typical Transfer Characteristics
–50
–40
–30
–20
–10
V
= –10 V
DS
Pulse Test
25°C
Tc = 75°C
–25°C
0
–1
–2
–3
–4
GS
–5
Gate to Source Voltage
V
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–2.0
–1.6
–1.2
–0.8
–0.4
Pulse Test
I
= –50 A
D
–20 A
–10 A
–4
Gate to Source Voltage
0
–2
–6
–8
–10
(V)
V
GS
Static Drain to Source on State Resistance
vs. Drain Current
100
50
V
GS
= –4 V
–10 V
20
10
5
2
1
Pulse Test
–3 –10 –30 –100 –300 –1000
Drain Current (A)
–1
I
D
5
2SJ408(L), 2SJ408(S)
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
30
20
10
I
= –50 A
D
V
= –4 V
–10 A
–20 A
GS
–10 A
–20 A
–50 A
–10 V
0
–40
0
40
80
120
160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
50
Tc = –25 °C
25 °C
20
10
5
75 °C
2
1
V
= –10 V
DS
Pulse Test
0.5
–0.3
–30
–0.1
–1
–3
–10
–100
Drain Current
I
(A)
D
6
2SJ408(L), 2SJ408(S)
Body to Drain Diode Reverse
Recovery Time
1000
500
200
100
50
20
10
di / dt = 50 A / µs
V
= 0, Ta = 25 °C
GS
–10
–50
–100
–1 –2
–5
–20
Reverse Drain Current
I
(A)
DR
Typical Capacitance vs.
Drain to Source Voltage
100000
V
GS
= 0
f = 1 MHz
30000
10000
Ciss
3000
1000
Coss
Crss
300
100
0
–10
–20
–30
–40
–50
(V)
Drain to Source Voltage
V
DS
Dynamic Input Characteristics
0
–20
–40
–60
0
V
= –10 V
–25 V
DD
–50 V
–4
–8
–12
V
= –50 V
–25 V
DD
V
DS
–10 V
V
GS
–80
–16
–20
I
= –50 A
D
–100
0
200
400
600
800 1000
Gate Charge Qg (nc)
7
2SJ408(L), 2SJ408(S)
Switching Characteristics
= –10 V, V = –30 V
5000
V
GS
DD
PW = 5 µs, duty < 1 %
2000
1000
500
t
d(off)
t
t
f
r
200
100
50
t
d(on)
–1 –2
–5 –10 –20
Drain Current
–50 –100
(A)
I
D
Reverse Drain Current vs.
Source to Drain Voltage
–100
–80
–60
–40
–20
Pulse Test
–10 V
–5 V
V
= 0
GS
0
–0.4
–0.8 –1.2 –1.6
–2.0
(V)
Source to Drain Voltage
V
SD
Maximun Avalanche Energy vs.
Channel Temperature Derating
250
200
150
100
I
= –50 A
AP
V
= –25 V
DD
duty < 0.1 %
Ω
Rg > 50
50
0
25
50
75
100
125
150
Channel Temperature Tch (°C)
8
2SJ408(L), 2SJ408(S)
Avalanche Test Circuit and Waveform
1
V
DSS
– V
2
E
=
• L • I
•
AP
AR
V
DSS
DD
2
L
V
DS
Monitor
I
AP
V
(BR)DSS
Monitor
I
AP
Rg
V
V
DD
D. U. T
DS
I
D
Vin
–15 V
50Ω
V
DD
0
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 1.25 °C/W, Tc = 25 °C
PW
T
P
DM
D =
0.03
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
9
2SJ408(L), 2SJ408(S)
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
10
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