2SK1838(L)-(1) [RENESAS]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;型号: | 2SK1838(L)-(1) |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
文件: | 总10页 (文件大小:52K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
2SK1838(L), 2SK1838(S)
Silicon N-Channel MOS FET
ADE-208-1327 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
•
•
•
•
Low on-resistance
High speed switching
Low drive current
No secondary breakdown
Suitable for switchingregulator, DC-DC converter
Outline
DPAK-1
4
4
1
2
3
1
2
3
D
1. Gate
G
2. Drain
3. Source
4. Drain
S
2SK1838(L), 2SK1838(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
250
VGSS
±30
V
ID
1
A
1
Drain peak current
ID(pulse)
*
2
A
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
IDR
1
A
Pch*2
Tch
10
W
°C
°C
150
Tstg
–55 to +150
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tc = 25 °C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS 250
—
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown
voltage
V(BR)GSS ±30
—
—
V
IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
100
3.0
—
µA
µA
V
VGS = ±25 V, VDS = 0
VDS = 200 V, VGS = 0
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 0.5 A *1
ID = 0.5 A, VGS = 10 V *1
Zero gate voltage drain current IDSS
—
—
Gate to source cutoff voltage
Forward transfer admittance
VGS(off)
|yfs|
2.0
0.3
—
—
0.5
5.5
S
Static drain to source on state RDS(on)
resistance
8.0
Ω
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Ciss
Coss
Crss
td(on)
tr
—
—
—
—
—
—
—
—
60
30
5
—
—
—
—
—
—
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 10 V, VGS = 0,
f = 1 MHz
5
VGS = 10 V, ID = 0.5 A,
6
RL = 60 Ω
Turn-off delay time
Fall time
td(off)
tf
10
4.5
0.96
Body to drain diode forward
voltage
VDF
IF = 1 A, VGS = 0
Body to drain diode reverse
recovery time
trr
—
160
—
ns
IF = 7 A, VGS = 0,
diF/dt = 100 A/µs
Note 1. Pulse test
2
2SK1838(L), 2SK1838(S)
Maximum Safe Operation Area
Power vs. Temperature Derating
10
20
15
10
5
3
1
0.3
0.1
Operation in this area
is limited by RDS (on)
0.03
0.01
Ta = 25°C
1
3
10
30
100
300
1000
0
50
100
150
200
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
Typical Transfer Characteristics
Typical Output Characteristics
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
0.2
8 V
6 V
5 V
Pulse Test
VDS = 10 V
10 V
Pulse Test
4.5 V
4 V
0.2
0
25°C
Tc = 75°C
VGS = 3.5 V
– 25°C
8
10
4
6
2
4
Drain to Source Voltage VDS (V)
0
6
2
8
10
Gate to Source Voltage VGS (V)
3
2SK1838(L), 2SK1838(S)
Static Drain to Source on State
Resistance vs. Drain Current
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
5
4
3
2
1
Pulse Test
VGS = 10 V
Pulse Test
20
10
5
0.5 A
2
1
0.2 A
ID = 0.1 A
0.5
0.02
0.05
0.5
Drain Current ID (A)
2
0.1
0.2
1
8
12
20
0
4
16
Gate to Source Voltage VGS (V)
Forward Transfer Admittance
vs. Drain Current
Static Drain to Source on State
Resistance vs. Temperaure
5
25
Pulse Test
VDS = 10 V
Pulse Test
VGS = 10 V
2
1
20
15
10
5
Tc = – 25°C
25°C
0.5
ID = 0.5 A
75°C
0.2
0.1
0.1 A
0.2 A
120
0.05
0.02
0
– 40
0.05
0.1
0.2
0.5
1
2
0
40
80
160
Drain Current ID (A)
Case Temperature Tc (°C)
4
2SK1838(L), 2SK1838(S)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Sorce Voltage
1000
500
1000
100
VGS = 0
f = 1 MHz
200
100
Ciss
Coss
50
10
µ
di / dt = 100 A /
s
VGS = 0, Ta = 25°C
20
10
Crss
1
0.05
0.1
0.2
0.5
1
2
5
0
10
20
30
40
50
Drain to Sourve Voltage VDS (V)
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
Switching Characteristics
20
100
50
500
400
300
200
100
.
=
VGS = 10 V,V DD 30 V
.
µ
PW = 2 s, duty 1 %
ID = 0.5 A
16
12
VGS
tf
20
10
td (off)
td (on)
VDD = 200 V
100 V
50 V
VDS
8
4
0
5
tr
VDD = 200 V
2
1
100 V
50 V
0.2
0.5
2
0.1
1
0
5
4
8
12
16
20
0.05
Drain Current ID (A)
Q
Gate Charge g (nc)
5
2SK1838(L), 2SK1838(S)
Reverse Drain Current
vs. Source to Drain Voltage
1.0
0.8
0.6
Pulse Test
0.4
0.2
VGS = 10 V
0, – 5 V
1.2
0.8
0
0.4
2.0
1.6
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
D = 1
0.5
Tc = 25°C
1.0
0.2
0.3
0.1
0.1
.
γ
θ ch – c(t) = s(t) θ ch – c
0.05
θ ch – c = 12.5°C / W. Tc = 25°C
0.02
PW
D =
T
PDM
0.03
0.01
0.01
PW
1
T
µ
100 m
µ
10 m
10
100
10
1 m
Pulse Width PW (S)
Vin Monitor
90 %
Vout Monitor
D.U.T
Vin
10 %
10 %
R L
10 %
Vout
Vin
10 V
50 Ω
.
=
.
VDD 30 V
90 %
td (off)
90 %
tr
td (on)
tf
6
2SK1838(L), 2SK1838(S)
Package Dimensions
As of January, 2001
Unit: mm
6.5 ± 0.5
5.4 ± 0.5
2.3 ± 0.2
0.55 ± 0.1
1.2 ± 0.3
1.15 ± 0.1
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
DPAK (L)-(1)
—
EIAJ
Conforms
0.42 g
Mass (reference value)
7
2SK1838(L), 2SK1838(S)
As of January, 2001
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
6.5 ± 0.5
5.4 ± 0.5
(4.9)
0 – 0.25
1.15 ± 0.1
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
EIAJ
DPAK (S)-(1),(2)
—
Conforms
0.28 g
Mass (reference value)
8
2SK1838(L), 2SK1838(S)
As of January, 2001
Unit: mm
2.3 ± 0.2
0.55 ± 0.1
6.5 ± 0.5
5.4 ± 0.5
(5.1)
(0.1)
(0.1)
0 – 0.25
1.15 ± 0.1
0.8 ± 0.1
0.55 ± 0.1
2.29 ± 0.5
2.29 ± 0.5
Hitachi Code
JEDEC
DPAK (S)-(3)
—
EIAJ
Conforms
0.28 g
Mass (reference value)
9
2SK1838(L), 2SK1838(S)
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
10
相关型号:
2SK1838(S)
Power Field-Effect Transistor, 1A I(D), 250V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3/2
HITACHI
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