2SK3234 [RENESAS]
8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220CFM, 3 PIN;
| 型号： | 2SK3234 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 8A, 500V, 0.85ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220CFM, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Electric and Hitachi XX, to Renesas Technology Corp.
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
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contained therein.
2SK3234
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1370 (Z)
1st. Edition
Mar. 2001
Features
•
•
•
•
•
Low on-resistance: RDS(on) = 0.65 Ω typ.
Low leakage current: IDSS = 1 µA max (at VDS = 500 V)
High speed switching: tf = 25 ns typ (at VGS = 10 V, VDD = 250 V, ID = 4 A)
Low gate charge: Qg = 25 nC typ (at VDD = 400 V, VGS = 10 V, ID = 8 A)
Avalanche ratings
Outline
TO–220CFM
D
G
1
2
3
1. Gate
2. Drain
3. Source
S
2SK3234
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDSS
Ratings
Unit
V
Drain to source voltage
Gate to source voltage
Drain current
500
±30
8
VGSS
ID
V
A
Note1
Drain peak current
ID
32
8
A
(pulse)
Body-drain diode reverse drain
current
IDR
A
Note1
Body-drain diode reverse drain peak
current
IDR
32
A
(pulse)
Note3
Avalanche current
IAP
8
A
Channel dissipation
Pch Note2
θ ch-c
Tch
35
W
Channel to case Thermal Impedance
Channel temperature
3.57
°C/W
°C
150
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
2
2SK3234
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V(BR)DSS
500
—
—
V
ID = 10 mA, VGS = 0
Gate to source leak current
IGSS
—
—
3.0
—
—
±0.1
1
µA
µA
V
VGS = ±30 V, VDS = 0
VDS = 500 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 4 A, VGS = 10 V Note4
Zero gate voltage drain current IDSS
—
Gate to source cutoff voltage
VGS(off)
—
4.0
0.85
Static drain to source on state RDS(on)
resistance
0.65
Ω
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
|yfs|
4.0
—
—
—
—
—
—
—
—
—
—
—
7.0
970
110
18
25
21
80
25
25
4
—
—
—
—
—
—
—
—
—
—
—
1.35
S
ID = 4 A, VDS = 10 V Note4
VDS = 25 V
VGS = 0
Ciss
Coss
Crss
td(on)
tr
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
f = 1 MHz
ID = 4 A
VGS = 10 V
RL = 62.5 Ω
Rg = 10 Ω
Turn-off delay time
Fall time
td(off)
tf
Total gate charge
Gate to source charge
Gate to drain charge
Qg
VDD = 400 V
VGS = 10 V
ID = 8 A
Qgs
Qgd
VDF
11
0.9
Body-drain diode forward
voltage
IF = 8 A, VGS = 0
Body-drain diode reverse
recovery time
trr
—
—
360
1.7
—
—
ns
IF = 8 A, VGS = 0
Body-drain diode reverse
recovery charge
Qrr
µC
diF/dt = 100 A/µs
Note: 4. Pulse test
3
2SK3234
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
100
40
30
20
10
10 µs
30
10
3
1
0.3
0.1
0.03
0.01
Operation in
this area is
limited by RDS(on)
Ta = 25°C
0
30
300
1000
50
100
150
200
1
3
10
100
Drain to Source Voltage VDS (V)
Case Temperature Tc (°C)
Typical Transfer Characteristics
= 10 V
Typical Output Characteristics
10
8
10
8
10 V
6 V
Pulse Test
V
DS
5.5 V
Pulse Test
Tc = 75°C
6
6
5 V
4
4
25°C
2
2
4.5 V
= 4V
–25°C
V
GS
0
0
2
4
6
8
10
10
20
30
40
50
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
4
2SK3234
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
5
20
16
12
8
Pulse Test
Pulse Test
= 10 V, 15 V
V
GS
2
1
0.5
I
= 8 A
D
5 A
2 A
4
0.2
0.1
0
6
20 50
2
4
8
10
1
2
10
5
0.1 0.2 0.5
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source on State Resistance
vs. Temperature
50
5
Pulse Test
20
10
5
Tc = –25°C
4
3
2
V
= 10 V
GS
75°C
25°C
2
1
I
= 8 A
D
0.5
1
0
5 A
0.2
0.1
V
= 10 V
DS
2 A
80
Pulse Test
10 20
Drain Current ID (A)
0.2 0.5
1
2
5
–40
0
40
120
160
0.1
50
Case Temperature Tc (°C)
5
2SK3234
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
5000
1000
500
V
GS
= 0
2000
1000
500
f = 1 MHz
Ciss
200
200
100
50
100
50
Coss
Crss
20
10
5
20
10
di / dt = 100 A / µs
V
= 0, Ta = 25°C
GS
0.1 0.3
1
3
10
30
100
0
50
100
150
200
250
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
I = 8 A
Switching Characteristics
= 10 V, V = 250 V
GS
PW = 10 µs, duty < 1 %
R =10 Ω
G
1000
500
1000
20
V
D
DD
V
GS
800
600
400
200
16
12
8
200
100
50
t
t
d(off)
f
V
= 100 V
250 V
400 V
DD
V
DS
t
d(on)
4
0
V
= 400 V
250 V
DD
20
10
t
r
100 V
0
10
20
30
40
50
0.1 0.3
1
3
10
30
100
Drain Current ID (A)
Gate Charge Qg (nC)
6
2SK3234
Reverse Drain Current vs.
Source to Drain Voltage
Gate to Source Cutoff Voltage
vs. Case Temperature
5
4
3
2
10
8
V
= 10 V
DS
I = 10mA
D
5, 10 V
1mA
6
V
= 0 V
GS
0.1mA
4
1
0
2
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
-50
0
50
100
150
200
Source to Drain Voltage VSD (V)
Case Temperature Tc (°C)
Waveform
Switching Time Test Circuit
Vout
Monitor
Vin Monitor
90%
D.U.T.
R
L
10%
10%
90%
Vin
10Ω
V
DD
Vin
10 V
Vout
10%
= 250 V
90%
td(off)
td(on)
t
f
tr
7
2SK3234
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
0.03
0.01
θ
θ
γ
θ
ch – c(t) = s (t) • ch – c
ch – c = 3.57°C/W, Tc = 25°C
PW
T
P
DM
D =
0.003
0.001
PW
T
10 µ
100 µ
1 m
10 m
Pulse Width PW (s)
100 m
1
10
8
2SK3234
Package Dimensions
As of January, 2001
Unit: mm
4.5 ± 0.3
2.7 ± 0.2
10.0 ± 0.3
φ 3.2 ± 0.2
1.0 ± 0.2
1.15 ± 0.2
2.5 ± 0.2
0.6 ± 0.1
2.54
2.54
0.7 ± 0.1
Hitachi Code
JEDEC
TO-220CFM
—
EIAJ
—
Mass (reference value)
1.9 g
9
2SK3234
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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For further information write to:
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(America) Inc.
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Electronic Components Group
Hitachi Asia Ltd.
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Singapore 049318
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Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
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World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
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Tel : <65>-538-6533/538-8577
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Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
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(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
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Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
10
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