2SK3305-ZJ-E1-AZ [RENESAS]
Switching N Channel MOSFET, MP-25ZJ, /Embossed Tape;型号: | 2SK3305-ZJ-E1-AZ |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | Switching N Channel MOSFET, MP-25ZJ, /Embossed Tape |
文件: | 总10页 (文件大小:300K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3305
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
ORDERING INFORMATION
The 2SK3305 is N-channel DMOS FET device that
features a low gate charge and excellent switching
characteristics, and designed for high voltage applications
such as switching power supply, AC adapter.
PART NUMBER
PACKAGE
TO-220AB
TO-262
2SK3305
2SK3305-S
2SK3305-ZJ
TO-263
FEATURES
• Low gate charge
QG = 13 nC TYP. (VDD = 400 V, VGS = 10 V, ID = 5.0 A)
• Gate voltage rating: 30 V
• Low on-state resistance
(TO-220AB)
RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
• Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
VDSS
VGSS(AC)
ID(DC)
ID(pulse)
PT
PT
Tch
Tstg
IAS
500
±30
±5
±20
75
V
V
A
(TO-262)
(TO-263)
Drain Current (pulse) Note1
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
W
W
°C
°C
A
1.5
150
Storage Temperature
–55 to +150
5.0
Single Avalanche Current Note2
Single Avalanche Energy Note2
EAS
125
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14003EJ2V0DS00 (2nd edition)
The mark shows major revised points.
Date Published July 2004 NS CP(K)
Printed in Japan
1998, 2000
2SK3305
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
100
100
3.5
UNIT
µA
nA
V
IDSS
VDS = 500 V, VGS = 0 V
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
VGS = 30 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 2.5 A
VGS = 10 V, ID = 2.5 A
VDS = 10 V
Gate Cut-off Voltage
2.5
1.0
Note
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
3.0
1.1
700
115
6
S
Note
1.5
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V
f = 1 MHz
td(on)
tr
VDD = 150 V, ID = 2.5 A
VGS = 10 V
16
3
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 10 Ω
33
5.5
13
4
RL = 60 Ω
Total Gate Charge
QG
VDD = 400 V
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
ID = 5.0 A
4.5
0.9
0.6
3.3
Note
Body Diode Forward Voltage
IF = 5.0 A, VGS = 0 V
IF = 5.0 A, VGS = 0 V
di/dt = 100 A/µs
Reverse Recovery Time
Reverse Recovery Charge
µs
µC
Qrr
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
D.U.T.
L
RG
= 25 Ω
V
GS
R
L
90%
PG.
GS = 20 → 0 V
V
GS
VGS
10%
V
DD
50 Ω
Wave Form
0
RG
V
PG.
VDD
90%
ID
90%
10%
BVDSS
ID
IAS
V
0
GS
10%
I
D
0
VDS
Wave Form
ID
td(on)
tr
td(off)
t
f
V
DD
τ
ton
toff
τ = 1 s
µ
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG
= 2 mA
RL
PG.
VDD
50 Ω
2
Data Sheet D14003EJ2V0DS
2SK3305
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
100
100
80
80
60
40
20
0
60
40
20
0
0
20
40
60
80 100 120 140 160
0
20
40
60
80 100 120 140 160
T
c
- Case Temperature - ˚C
T
c
- Case Temperature - ˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA
Figure4. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
10
1
Pulsed
10 V
I
D(pulse)
10
8
µ
VGS = 20 V
8.0 V
µ
I
D(DC)
6
4
VGS = 6.0 V
2
T
c
= 25˚C
Single pulse
0.1
1
10
100
1000
0
0
4
8
12
16
VDS - Drain to Source Voltage - V
VDS - Drain to Source Voltage - V
Figure5. DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1000
Pulsed
100
10
1
T
A
= –25˚C
25˚C
75˚C
0.1
125˚C
0.01
0.001
0
5
10
15
VGS - Gate to Source Voltage - V
3
Data Sheet D14003EJ2V0DS
2SK3305
Figure6. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 62.5˚C/W
100
10
Rth(ch-C) = 1.67˚C/W
1
0.1
Tc = 25˚C
Single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
PW - Pulse Width - s
Figure8. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
Figure7. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
4.0
T
A
= –25˚C
25˚C
75˚C
125˚C
3.0
1
I
D
= 5.0 A
= 2.5 A
2.0
1.0
0.0
ID
0.1
V
DS = 10 V
Pulsed
Pulsed
20 25
0.01
0.01
0.1
1
10
100
0
5
10
15
VGS - Gate to Source Voltage - V
I
D
- Drain Current - A
Figure9. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Figure10. GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
4.0
Pulsed
V
DS = 10 V
= 1 mA
ID
3.0
2.0
1.0
0.0
2.0
1.0
0
0.1
1
10
100
–50
0
50
100
150
200
I
D
- Drain Current - A
T
ch - Channel Temperature - ˚C
4
Data Sheet D14003EJ2V0DS
2SK3305
Figure12. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Figure11. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
100
10
3.0
Pulsed
I
D
= 5.0 A
= 2.5 A
2.0
1.0
0.0
I
D
1
V
GS = 10 V
V
GS = 0 V
0.1
V
GS = 10 V
0.01
1.5
0.0
0.5
1.0
–50
0
50
100 150
V
F(S-D) - Source to Drain Voltage - V
T
ch - Channel Temperature - ˚C
Figure13. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
Figure14. SWITCHING CHARACTERISTICS
100
10
t
r
10000
V
GS = 0 V
f = 1.0 MHz
t
d(off)
C
iss
t
t
d(on)
1000
100
f
C
oss
10
1
1
C
rss
V
DD = 150 V
GS = 10 V
V
R
G
= 10 Ω
0.1
0.1
0.1
1
10
100
1
10
100
1000
I
D
- Drain Current - A
VDS - Drain to Source Voltage - V
Figure16. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
800
Figure15. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
2000
1800
1600
1400
I
D
= 5.0 A
14
12
10
8
700
600
500
400
300
200
100
di/dt = 100 A/µs
V
GS = 0 V
V
GS
V
DD = 400 V
250 V
125 V
1200
1000
800
600
400
200
0
6
4
2
V
DS
2
4
6
8
10
12 14
0.1
1
10
100
QG
- Gate Charge - nC
I
F
- Diode Forward Current - A
5
Data Sheet D14003EJ2V0DS
2SK3305
Figure18. SINGLE AVALANCHE CURRENT vs
INDUCTIVE LOAD
Figure17. SINGLE AVALANCHE ENERGY vs
STARTING CHANNEL TEMPERATURE
100
10
1
150
125
100
R
G
= 25 Ω
I
D(peak) = IAS
V
DD = 150 V
R
G
= 25 Ω
V
GS = 20 → 0 V
V
V
GS = 20 → 0 V
Starting Tch = 25˚C
DD = 150 V
E
AS = 125 mJ
I
AS = 5.0 A
75
50
25
0
0.1
100
25
50
75
100
125
150
175
1 m
10 m
100 m
µ
Starting Tch - Starting Channel Temperature - ˚C
L - Inductive Load - H
6
Data Sheet D14003EJ2V0DS
2SK3305
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB (MP-25)
2) TO-262 (MP-25 Fin Cut)
φ
3.6 0.2
4.8 MAX.
1.3 0.2
10.6 MAX.
10.0 TYP.
4.8 MAX.
1.3 0.2
10 TYP.
4
1
2
3
4
1
2 3
1.3 0.2
1.3 0.2
2.8 0.2
0.5 0.2
1. Gate
0.75 0.3
2.54 TYP.
2.54 TYP.
0.75 0.1
2.54 TYP.
0.5 0.2
2.8 0.2
2.54 TYP.
2. Drain
3. Source
4. Fin (Drain)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
3) TO-263 (MP-25ZJ)
4.8 MAX.
10 TYP.
1.3 0.2
4
EQUIVALENT CIRCUIT
Drain (D)
1
2
3
1.4 0.2
Body
Gate (G)
Diode
0.7 0.2
0.5 0.2
2.54 TYP.
2.54 TYP.
1. Gate
2. Drain
3. Source
Source (S)
4. Fin (Drain)
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
7
Data Sheet D14003EJ2V0DS
2SK3305
•
The information in this document is current as of July, 2004. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
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