2SK3576-T2B [RENESAS]
2SK3576-T2B;
| 型号： | 2SK3576-T2B |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 2SK3576-T2B |
| 文件： | 总10页 (文件大小：196K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1st, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3576
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK3576 is a switching device which can be driven
directly by a 2.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
+0.1
–0.05
0.4
+0.1
–0.06
0.16
3
FEATURES
0 to 0.1
1
• 2.5V drive available
2
• Low on-state resistance
RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
RDS(on)3 = 75 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
0.65
0.95 0.95
1.9
0.9 to 1.1
2.9 ±0.2
ORDERING INFORMATION
1
: Gate
PART NUMBER
2SK3576
PACKAGE
2 : Source
3 : Drain
SC-96 (Mini Mold Thin Type)
Marking: XK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note1
EQUIVALENT CIRCUIT
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
20
V
V
Drain
±12
±4.0
±16
0.2
A
Body
A
Diode
Gate
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TA = 25°C) Note2
Channel Temperature
W
W
°C
PT2
1.25
150
Gate
Tch
Protection
Diode
Source
Storage Temperature
Tstg
–55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2001
©
Document No.
Date Published May 2002 NS CP(K)
Printed in Japan
D15939EJ1V0DS00 (1st edition)
2SK3576
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 20 V, VGS = 0 V
MIN. TYP. MAX. UNIT
10
±10
1.5
µA
µA
V
IGSS
VGS = ±12 V, VDS = 0 V
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 2.0 A
VGS = 4.5 V, ID = 2.0 A
VGS = 4.0 V, ID = 2.0 A
VGS = 2.5 V, ID = 2.0 A
VDS = 10 V
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
0.5
1.0
Forward Transfer Admittance
Drain to Source On-state Resistance
S
40
42
50
53
75
mΩ
mΩ
mΩ
pF
pF
pF
ns
56
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
250
80
Coss
VGS = 0 V
Crss
f = 1.0 MHz
60
td(on)
VDD = 10 V, ID = 2.0 A
VGS = 4.0 V
28
tr
140
110
180
3.3
0.7
1.5
0.89
ns
Turn-off Delay Time
Fall Time
td(off)
RG = 10 Ω
ns
tf
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
QG
VDD = 16 V
nC
nC
nC
V
QGS
VGS = 4.0 V
QGD
ID = 4.0 A
VF(S-D)
IF = 4.0 A, VGS = 0 V
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
I
G
= 2 mA
RL
V
V
GS
R
L
90%
V
GS
Wave Form
V
GS
10%
RG
0
PG.
V
DD
50 Ω
PG.
V
DD
DS
90%
90%
V
0
GS
V
DS
10% 10%
V
DS
Wave Form
0
τ
t
d(on)
t
r
t
d(off)
tf
τ = 1µs
t
on
toff
Duty Cycle ≤ 1%
2
Data Sheet D15939EJ1V0DS
2SK3576
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
80
60
40
20
0
1.5
1.25
1
0.75
0.5
0.25
0
0
20
40
60
80 100 120 140 160
0
20
40
60
80
100 120 140 160
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
10
DS(on)
R
Limited
GS
(V = 4.5 V)
D(pulse)
I
ID(DC)
PW = 1 ms
1
10 ms
100 ms
5 s
0.1
0.01
Single Pulse
Mounted on FR-4 board of
50 mm × 50 mm × 1.6 mm
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Single Pulse
1000
100
10
Without board
Mounted on FR-4 board of
50 mm × 50 mm × 1.6 mm
1
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
3
Data Sheet D15939EJ1V0DS
2SK3576
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
20
16
12
8
100
10
Pulsed
DS
V
= 10 V
GS
V
= 4.5 V
1
4.0 V
A
T
= 125°C
75°C
25°C
−25°C
0.1
0.01
0.001
0.0001
0.00001
2.5 V
0.4
4
0
0.0
0.2
0.6
0.8
1.0
0
1
2
3
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1.5
100
10
VDS = 10 V
VDS = 10 V
ID = 1 mA
1
1
TA = 125°C
75°C
25°C
−25°C
0.1
0.5
0.01
-50
0
50
100
150
0.01
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATERESISTANCE vs.
CHANNEL TEMPERATURE
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
100
100
ID = 2.0 A
ID = 2.0 A
90
80
70
60
50
40
30
20
90
80
70
60
50
40
30
20
GS
V
= 2.5 V
4.0 V
4.5 V
-50
0
50
100
150
0
2
4
6
8
10
12
Tch - Channel Temperature - °C
VGS - Gate to Source Voltage - V
4
Data Sheet D15939EJ1V0DS
2SK3576
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
90
80
GS
V
= 2.5 V
VGS = 4.0 V
Pulsed
Pulsed
70
80
70
60
50
40
30
A
°
= 125 C
T
A
°
= 125 C
T
60
50
40
30
20
°
75 C
°
75 C
25°C
°
25 C
−25°C
−
°
25 C
0.01
0.1
1
10
100
0.01
0.1
1
10
100
ID - Drain Current - A
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
80
VGS = 4.5 V
Pulsed
70
VGS = 0 V
f = 1 MHz
iss
C
60
A
°
= 125 C
T
°
75 C
50
40
30
20
100
25°C
Coss
rss
C
−
°
25 C
10
0.01
0.1
1
10
100
0.1
1
10
100
ID - Drain Current - A
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
1000
Pulsed
DD
V
= 10 V
GS
V
R
= 4.0 V
G
Ω
= 10
r
t
10
1
f
t
GS
V
= 0 V
100
d(off)
d(on)
t
t
0.1
10
0.01
0.1
1
10
0.4
0.6
0.8
1.0
1.2
1.4
ID - Drain Current - A
VSD - Source to Drain Voltage - V
5
Data Sheet D15939EJ1V0DS
2SK3576
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
5
ID = 10 A
4
3
2
1
0
VDD = 16 V
10 V
0
1
2
3
4
5
QG - Gate Charge - nC
6
Data Sheet D15939EJ1V0DS
2SK3576
[MEMO]
7
Data Sheet D15939EJ1V0DS
2SK3576
•
The information in this document is current as of May, 2002. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
availability and additional information.
•
•
No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
•
•
•
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4
相关型号：
2SK3577-A
Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SC-96, 3 PIN
NEC
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