2SK3643-ZK-E1 [RENESAS]
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,64A I(D),TO-252;型号: | 2SK3643-ZK-E1 |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,64A I(D),TO-252 |
文件: | 总8页 (文件大小:165K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3643
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
PART NUMBER
PACKAGE
The 2SK3643 is N-channel MOS FET device that
features a low on-state resistance and excellent switching
characteristics, and designed for low voltage high current
applications such as DC/DC converter with synchronous
rectifier.
TO-252 (MP-3ZK)
2SK3643-ZK
(TO-252)
FEATURES
• Low on-state resistance
RDS(on)1 = 6 mΩ MAX. (VGS = 10 V, ID = 32 A)
RDS(on)2 = 9 mΩ MAX. (VGS = 4.5 V, ID = 32 A)
• Low Ciss: Ciss = 2400 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
30
±20
V
V
A
A
±64
±256
40
Total Power Dissipation (TC = 25°C)
Total Power Dissipation
W
W
PT2
1.0
Channel Temperature
Tch
150
°C
°C
A
Storage Temperature
Tstg
−55 to +150
40
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS
EAS
160
mJ
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15971EJ4V0DS00 (4th edition)
The mark shows major revised points.
Date Published January 2005 NS CP(K)
Printed in Japan
2002
2SK3643
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX.
UNIT
µA
nA
V
IDSS
VDS = 30 V, VGS = 0 V
10
IGSS
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 32 A
VGS = 10 V, ID = 32 A
VGS = 4.5 V, ID = 32 A
±100
Gate Cut-off Voltage
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
1.5
19
2.5
Note
Forward Transfer Admittance
39
4.7
6.3
2400
920
320
14
S
Note
Drain to Source On-state Resistance
6
9
mΩ
mΩ
pF
pF
pF
ns
Input Capacitance
Output Capacitance
VDS = 10 V
VGS = 0 V
f = 1 MHz
Coss
Crss
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
td(on)
tr
VDD = 15 V, ID = 32 A
VGS = 10 V
14
ns
RG = 10 Ω
Turn-off Delay Time
Fall Time
td(off)
tf
75
ns
23
ns
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
QG
VDD = 24 V
VGS = 10 V
ID = 64 A
48
nC
nC
nC
V
QGS
QGD
VF(S-D)
trr
8.4
12
Note
Body Diode Forward Voltage
IF = 64 A, VGS = 0 V
IF = 64 A, VGS = 0 V
di/dt = 100 A/µs
0.96
45
Reverse Recovery Time
Reverse Recovery Charge
ns
Qrr
44
nC
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
D.U.T.
V
GS
0
R
G
= 25 Ω
50 Ω
R
L
90%
90%
V
GS
Wave Form
V
GS
10%
90%
R
G
PG.
V
DD
PG.
GS = 20 → 0 V
V
DD
V
VDS
V
DS
V
0
GS
BVDSS
10% 10%
V
DS
Wave Form
0
I
AS
V
DS
ID
τ
t
d(on)
t
r
t
d(off)
t
f
VDD
t
on
t
off
τ = 1
µs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
RL
50 Ω
PG.
V
DD
2
Data Sheet D15971EJ4V0DS
2SK3643
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
80
60
40
20
0
50
40
30
20
10
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
100
10
PW = 10 µs
D(pulse)
I
100 µs
D(DC)
I
DS(on)
R
Limited
= 10 V)
1 ms
GS
(at V
DC
10 ms
Power Dissipation Limited
1
C
T
= 25°C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
th(ch-A)
R
= 125°C/W
th(ch-C)
R
= 3.13°C/W
1
0.1
0.01
10 µ
100 µ
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
3
Data Sheet D15971EJ4V0DS
2SK3643
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
300
250
200
150
100
50
1000
100
10
GS
V
= 10 V
ch
T
= −55°C
25°C
75°C
4.5 V
150°C
1
0.1
0.01
DS
V
= 10 V
Pulsed
2.5
Pulsed
0
0
0.5
1
1.5
2
3
0
1
2
3
4
5
VDS - Drain to Source Voltage - V
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
3
2.5
2
100
10
1
DS
V
= 10 V
ch
T
= −55°C
25°C
D
I
= 1 mA
75°C
150°C
1.5
1
0.5
DS
V
= 10 V
Pulsed
0
0.1
- 50 - 25
0
25
50
75 100 125 150
0.1
1
10
100
ID - Drain Current - A
Tch - Channel Temperature - °C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
30
Pulsed
Pulsed
25
20
25
20
15
15
VGS = 4.5 V
10
10
D
I
= 32 A
10
10 V
5
5
0
0
1
10
100
1000
0
5
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D15971EJ4V0DS
2SK3643
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
12.5
10000
1000
100
Ciss
10
GS
V
= 4.5 V
10 V
Coss
7.5
5
Crss
2.5
GS
V
= 0 V
D
I
= 32 A
f = 1 MHz
Pulsed
10
0
0.01
0.1
1
10
100
- 50 - 25
0
25
50
75 100 125 150
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
100
10
30
12
10
8
DD
V
V
R
= 15 V
GS
G
= 10 V
25
20
15
10
5
= 10 Ω
DD
V
= 24 V
15 V
d(off)
t
f
t
6
r
t
GS
V
4
d(on)
t
2
DS
V
D
I
= 64 A
50
1
0
0
0.1
1
10
100
0
10
20
30
40
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
1000
100
10
di/dt = 100 A/µs
GS
V
= 0 V
GS
V
= 10 V
0 V
1
0.1
0.01
Pulsed
1.5
1
0
0.5
1
0.1
1
10
100
VF(S-D) - Source to Drain Voltage - V
IF - Diode Forward Current - A
5
Data Sheet D15971EJ4V0DS
2SK3643
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
10
1
120
100
80
60
40
20
0
VDD = 15 V
RG = 25 Ω
GS
IAS = 40 A
V
= 20 → 0 V
EAS = 160 mJ
IAS ≤ 40 A
VDD = 15 V
RG = 25 Ω
VGS = 20 → 0 V
Starting Tch = 25°C
0.1
0.01
0.1
1
10
25
50
75
100
125
150
Starting Tch - Starting Channel Temperature - °C
L - Inductive Load - mH
6
Data Sheet D15971EJ4V0DS
2SK3643
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
2.3 0.1
6.5 0.2
5.1 TYP.
4.3 MIN.
0.5 0.1
No Plating
4
1
2
3
No Plating
0.76 0.12
1.14 MAX.
0 to 0.25
0.5 0.1
2.3 2.3
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
7
Data Sheet D15971EJ4V0DS
2SK3643
•
The information in this document is current as of January, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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appear in this document.
•
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•
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M8E 02. 11-1
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