2SK3643-ZK-E1 [RENESAS]

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,64A I(D),TO-252;
2SK3643-ZK-E1
型号: 2SK3643-ZK-E1
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,64A I(D),TO-252

文件: 总8页 (文件大小:165K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
2SK3643  
SWITCHING  
N-CHANNEL POWER MOS FET  
ORDERING INFORMATION  
DESCRIPTION  
PART NUMBER  
PACKAGE  
The 2SK3643 is N-channel MOS FET device that  
features a low on-state resistance and excellent switching  
characteristics, and designed for low voltage high current  
applications such as DC/DC converter with synchronous  
rectifier.  
TO-252 (MP-3ZK)  
2SK3643-ZK  
(TO-252)  
FEATURES  
Low on-state resistance  
RDS(on)1 = 6 mMAX. (VGS = 10 V, ID = 32 A)  
RDS(on)2 = 9 mMAX. (VGS = 4.5 V, ID = 32 A)  
Low Ciss: Ciss = 2400 pF TYP.  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC) (TC = 25°C)  
Drain Current (pulse) Note1  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
30  
±20  
V
V
A
A
±64  
±256  
40  
Total Power Dissipation (TC = 25°C)  
Total Power Dissipation  
W
W
PT2  
1.0  
Channel Temperature  
Tch  
150  
°C  
°C  
A
Storage Temperature  
Tstg  
55 to +150  
40  
Single Avalanche Current Note2  
Single Avalanche Energy Note2  
IAS  
EAS  
160  
mJ  
Notes 1. PW 10 µs, Duty Cycle 1%  
2. Starting Tch = 25°C, VDD = 15 V, RG = 25 , VGS = 20 0 V  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D15971EJ4V0DS00 (4th edition)  
The mark shows major revised points.  
Date Published January 2005 NS CP(K)  
Printed in Japan  
2002  
2SK3643  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
CHARACTERISTICS  
Zero Gate Voltage Drain Current  
Gate Leakage Current  
SYMBOL  
TEST CONDITIONS  
MIN. TYP. MAX.  
UNIT  
µA  
nA  
V
IDSS  
VDS = 30 V, VGS = 0 V  
10  
IGSS  
VGS = ±20 V, VDS = 0 V  
VDS = 10 V, ID = 1 mA  
VDS = 10 V, ID = 32 A  
VGS = 10 V, ID = 32 A  
VGS = 4.5 V, ID = 32 A  
±100  
Gate Cut-off Voltage  
VGS(off)  
| yfs |  
RDS(on)1  
RDS(on)2  
Ciss  
1.5  
19  
2.5  
Note  
Forward Transfer Admittance  
39  
4.7  
6.3  
2400  
920  
320  
14  
S
Note  
Drain to Source On-state Resistance  
6
9
mΩ  
mΩ  
pF  
pF  
pF  
ns  
Input Capacitance  
Output Capacitance  
VDS = 10 V  
VGS = 0 V  
f = 1 MHz  
Coss  
Crss  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Rise Time  
td(on)  
tr  
VDD = 15 V, ID = 32 A  
VGS = 10 V  
14  
ns  
RG = 10 Ω  
Turn-off Delay Time  
Fall Time  
td(off)  
tf  
75  
ns  
23  
ns  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain Charge  
QG  
VDD = 24 V  
VGS = 10 V  
ID = 64 A  
48  
nC  
nC  
nC  
V
QGS  
QGD  
VF(S-D)  
trr  
8.4  
12  
Note  
Body Diode Forward Voltage  
IF = 64 A, VGS = 0 V  
IF = 64 A, VGS = 0 V  
di/dt = 100 A/µs  
0.96  
45  
Reverse Recovery Time  
Reverse Recovery Charge  
ns  
Qrr  
44  
nC  
Note Pulsed: PW 350 µs, Duty Cycle 2%  
TEST CIRCUIT 1 AVALANCHE CAPABILITY  
TEST CIRCUIT 2 SWITCHING TIME  
D.U.T.  
L
D.U.T.  
V
GS  
0
R
G
= 25 Ω  
50 Ω  
R
L
90%  
90%  
V
GS  
Wave Form  
V
GS  
10%  
90%  
R
G
PG.  
V
DD  
PG.  
GS = 20 0 V  
V
DD  
V
VDS  
V
DS  
V
0
GS  
BVDSS  
10% 10%  
V
DS  
Wave Form  
0
I
AS  
V
DS  
ID  
τ
t
d(on)  
t
r
t
d(off)  
t
f
VDD  
t
on  
t
off  
τ = 1  
µs  
Duty Cycle 1%  
Starting Tch  
TEST CIRCUIT 3 GATE CHARGE  
D.U.T.  
= 2 mA  
I
G
RL  
50 Ω  
PG.  
V
DD  
2
Data Sheet D15971EJ4V0DS  
2SK3643  
TYPICAL CHARACTERISTICS (TA = 25°C)  
DERATING FACTOR OF FORWARD BIAS  
SAFE OPERATING AREA  
TOTAL POWER DISSIPATION vs.  
CASE TEMPERATURE  
120  
100  
80  
60  
40  
20  
0
50  
40  
30  
20  
10  
0
0
25  
50  
75  
100  
125  
150  
175  
0
25  
50  
75  
100  
125  
150  
175  
TC - Case Temperature - °C  
TC - Case Temperature - °C  
FORWARD BIAS SAFE OPERATING AREA  
1000  
100  
10  
PW = 10 µs  
D(pulse)  
I
100 µs  
D(DC)  
I
DS(on)  
R
Limited  
= 10 V)  
1 ms  
GS  
(at V  
DC  
10 ms  
Power Dissipation Limited  
1
C
T
= 25°C  
Single pulse  
0.1  
0.1  
1
10  
100  
VDS - Drain to Source Voltage - V  
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH  
1000  
100  
10  
th(ch-A)  
R
= 125°C/W  
th(ch-C)  
R
= 3.13°C/W  
1
0.1  
0.01  
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
100  
1000  
PW - Pulse Width - s  
3
Data Sheet D15971EJ4V0DS  
2SK3643  
DRAIN CURRENT vs.  
FORWARD TRANSFER CHARACTERISTICS  
DRAIN TO SOURCE VOLTAGE  
300  
250  
200  
150  
100  
50  
1000  
100  
10  
GS  
V
= 10 V  
ch  
T
= 55°C  
25°C  
75°C  
4.5 V  
150°C  
1
0.1  
0.01  
DS  
V
= 10 V  
Pulsed  
2.5  
Pulsed  
0
0
0.5  
1
1.5  
2
3
0
1
2
3
4
5
VDS - Drain to Source Voltage - V  
VGS - Gate to Source Voltage - V  
GATE CUT-OFF VOLTAGE vs.  
CHANNEL TEMPERATURE  
FORWARD TRANSFER ADMITTANCE vs.  
DRAIN CURRENT  
3
2.5  
2
100  
10  
1
DS  
V
= 10 V  
ch  
T
= 55°C  
25°C  
D
I
= 1 mA  
75°C  
150°C  
1.5  
1
0.5  
DS  
V
= 10 V  
Pulsed  
0
0.1  
- 50 - 25  
0
25  
50  
75 100 125 150  
0.1  
1
10  
100  
ID - Drain Current - A  
Tch - Channel Temperature - °C  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
DRAIN CURRENT  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
GATE TO SOURCE VOLTAGE  
30  
30  
Pulsed  
Pulsed  
25  
20  
25  
20  
15  
15  
VGS = 4.5 V  
10  
10  
D
I
= 32 A  
10  
10 V  
5
5
0
0
1
10  
100  
1000  
0
5
15  
20  
ID - Drain Current - A  
VGS - Gate to Source Voltage - V  
4
Data Sheet D15971EJ4V0DS  
2SK3643  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.  
CHANNEL TEMPERATURE  
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE  
12.5  
10000  
1000  
100  
Ciss  
10  
GS  
V
= 4.5 V  
10 V  
Coss  
7.5  
5
Crss  
2.5  
GS  
V
= 0 V  
D
I
= 32 A  
f = 1 MHz  
Pulsed  
10  
0
0.01  
0.1  
1
10  
100  
- 50 - 25  
0
25  
50  
75 100 125 150  
VDS - Drain to Source Voltage - V  
Tch - Channel Temperature - °C  
SWITCHING CHARACTERISTICS  
DYNAMIC INPUT/OUTPUT CHARACTERISTICS  
1000  
100  
10  
30  
12  
10  
8
DD  
V
V
R
= 15 V  
GS  
G
= 10 V  
25  
20  
15  
10  
5
= 10 Ω  
DD  
V
= 24 V  
15 V  
d(off)  
t
f
t
6
r
t
GS  
V
4
d(on)  
t
2
DS  
V
D
I
= 64 A  
50  
1
0
0
0.1  
1
10  
100  
0
10  
20  
30  
40  
ID - Drain Current - A  
QG - Gate Charge - nC  
SOURCE TO DRAIN DIODE  
FORWARD VOLTAGE  
REVERSE RECOVERY TIME vs.  
DIODE FORWARD CURRENT  
1000  
100  
10  
1000  
100  
10  
di/dt = 100 A/µs  
GS  
V
= 0 V  
GS  
V
= 10 V  
0 V  
1
0.1  
0.01  
Pulsed  
1.5  
1
0
0.5  
1
0.1  
1
10  
100  
VF(S-D) - Source to Drain Voltage - V  
IF - Diode Forward Current - A  
5
Data Sheet D15971EJ4V0DS  
2SK3643  
SINGLE AVALANCHE CURRENT vs.  
INDUCTIVE LOAD  
SINGLE AVALANCHE ENERGY  
DERATING FACTOR  
100  
10  
1
120  
100  
80  
60  
40  
20  
0
VDD = 15 V  
RG = 25 Ω  
GS  
IAS = 40 A  
V
= 20 0 V  
EAS = 160 mJ  
IAS 40 A  
VDD = 15 V  
RG = 25 Ω  
VGS = 20 0 V  
Starting Tch = 25°C  
0.1  
0.01  
0.1  
1
10  
25  
50  
75  
100  
125  
150  
Starting Tch - Starting Channel Temperature - °C  
L - Inductive Load - mH  
6
Data Sheet D15971EJ4V0DS  
2SK3643  
PACKAGE DRAWING (Unit: mm)  
TO-252 (MP-3ZK)  
2.3 0.1  
6.5 0.2  
5.1 TYP.  
4.3 MIN.  
0.5 0.1  
No Plating  
4
1
2
3
No Plating  
0.76 0.12  
1.14 MAX.  
0 to 0.25  
0.5 0.1  
2.3 2.3  
1.0  
1. Gate  
2. Drain  
3. Source  
4. Fin (Drain)  
EQUIVALENT CIRCUIT  
Drain  
Body  
Diode  
Gate  
Source  
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately  
degrade the device operation. Steps must be taken to stop generation of static electricity as much as  
possible, and quickly dissipate it once, when it has occurred.  
7
Data Sheet D15971EJ4V0DS  
2SK3643  
The information in this document is current as of January, 2005. The information is subject to  
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data  
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not  
all products and/or types are available in every country. Please check with an NEC Electronics sales  
representative for availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without the prior  
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may  
appear in this document.  
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual  
property rights of third parties by or arising from the use of NEC Electronics products listed in this document  
or any other liability arising from the use of such products. No license, express, implied or otherwise, is  
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Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
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(Note)  
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defined above).  
M8E 02. 11-1  

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