2SK3984-ZK [RENESAS]
18000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA, TO-252, MP-3ZK, 3 PIN;型号: | 2SK3984-ZK |
厂家: | RENESAS TECHNOLOGY CORP |
描述: | 18000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA, TO-252, MP-3ZK, 3 PIN 开关 晶体管 |
文件: | 总10页 (文件大小:361K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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April 1st, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3984
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
ORDERING INFORMATION
The 2SK3984 is N-channel MOS Field Effect Transistor
designed for high speed switching applications such as
class-D amplifier.
PART NUMBER
2SK3984-ZK
PACKAGE
TO-252 (MP-3ZK)
FEATURES
• Super low on-state resistance
RDS(on) = 71 mΩ TYP. (VGS = 10 V, ID = 9 A)
RDS(on) = 85 mΩ MAX. (VGS = 10 V, ID = 9 A)
• Low Ciss: Ciss = 750 pF TYP.
(TO-252)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
VDSS
VGSS
ID(D
I
1
0
V
V
±18
A
±45
A
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
30
W
W
°C
°C
mJ
A
PT2
1.0
Tch
150
Storage Temperature
Tstg
−55 to +150
10
Single Avalanche Energy
Repetitive Avalanche t Note3
Repetitive Avalanche Energy Note3
EAS
IAR
10
EAR
10
mJ
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
125
°C/W
°C/W
Channel to Ambient Thermal Resistance Rth(ch-A)
4.17
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. Tch(peak) ≤ 150°C, RG = 25 Ω
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17323EJ2V0DS00 (2nd edition)
Date Published April 2006 NS CP(K)
Printed in Japan
2004
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SK3984
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 100 V, VGS = 0 V
MIN.
TYP.
MAX.
UNIT
μA
μA
V
10
±10
6.5
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
VGS = ±20 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 10 V, ID = 9 A
VGS = 10 V, ID = 9 A
Gate Cut-off Voltage
4.5
2.5
5.5
5.8
71
750
120
40
15
6
Note
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
S
Note
85
mΩ
pF
pF
pF
ns
VDS = 10 V
VGS = 0 V
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
td(on)
tr
VDD = 50 V, ID = 9 A
VGS = 10 V
ns
RG = 10 Ω
Turn-off Delay Time
Fall Time
td(off)
tf
17
5
ns
ns
Total Gate Charge
QG
VDD = 50 V
VGS = 10 V
ID = 18 A
13
5.5
4
nC
nC
nC
V
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VF(S-D)
trr
Note
Body Diode Forward Voltage
IF = 18 A, VGS = 0
IF = 18 A, V
di/dt = 1
0.9
56
146
1.5
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
ns
<R>
Qrr
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
D.U.T.
V
GS
R
L
RG
= 25 Ω
90%
V
GS
Wave Form
V
GS
10%
0
R
G
PG.
GS = 20 → 0 V
PG.
50 Ω
DD
V
DD
V
V
DS
90%
90%
V
DS
V
0
GS
SS
10% 10%
V
DS
Wave Form
0
V
DS
τ
I
D
t
d(on)
t
r
t
d(off)
tf
V
DD
t
on
toff
τ = 1 μs
Duty Cycle ≤ 1%
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
= 2 mA
I
G
R
L
PG.
50 Ω
V
DD
2
Data Sheet D17323EJ2V0DS
2SK3984
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
50
40
30
20
10
0
120
100
80
60
40
20
0
0
25
50
00 125 150 175
0
25
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
50
75 100 125 150 175
TC emperature - °C
100
10
I
I
D(pulse) = 36 A
D(DC) = 18 A
I
D(pulse) = 45 A
PW = 10μs
100μs
500μs
1ms
10ms
R
DS(on) Limited
1
(at VGS = 10 V)
Power Dissipation Limited
0.1
0.01
C
T = 25°C
Single Pulse
0.1
1
10
1000
VDS - Drain to Soage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10
100
10
Rth(ch-A) = 125°C/W
Rth(ch-C) = 4.17°C/W
Single pulse
1
0.1
0.01
100 μ
1 m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
3
Data Sheet D17323EJ2V0DS
2SK3984
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
50
45
40
35
30
25
20
15
10
5
100
10
T
ch = 150°C
125°C
75°C
V
GS = 10 V
25°C
− 25°C
− 40°C
1
0.1
0.01
0.001
0.0001
V
DS = 10 V
Pulsed
Pulse
9
0
0
1
2
3
4
5
6
7
8
10
0
1
2
3
4
5
6
7
8
9
10
VDS - Drain to Source Voltage - V
VGS - Garce Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWANSFER ADMITTANCE vs.
DRRENT
8
7
6
5
4
3
2
10
1
= 10 V
V
DS = 10 V
= 1 mA
ulsed
I
D
T
ch = − 40°C
− 25°C
25°C
75°C
125°C
150°C
0.1
0.01
-50 -25
0
25 50 75 100 0 175
0.01
0.1
1
10
100
Tch - Channel Tem- °C
ID - Drain Current - A
DRAIN TO SOURCE ATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
240
140
Puls ed
Puls ed
120
220
200
180
160
140
120
100
100
80
60
40
20
0
ID = 9 A
ID = 5 A
VGS = 10 V
80
60
40
1
10
100
4
6
8
10 12 14 16 18 20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D17323EJ2V0DS
2SK3984
<R>
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
180
D
I = 9 A
160
140
120
100
80
Pulsed
C
iss
1000
100
10
C
oss
V
GS = 10 V
C
rss
60
V
GS = 0 V
40
f = 1 MHz
20
1
-50 -25
0
25 50 75 100 125 150 175
0.1
1
10
100
Tch - Channel Temperature - °C
VDS - Drarce Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INTPUT CHARACTERISTICS
120
1000
12
10
8
VDD = 80 V
50 V
V
V
R
GS = 10 V
DD = 50 V
= 0 Ω
100
60
40
20
0
G
20 V
100
10
1
VGS
t
t
d(off)
6
4
t
d(on)
f
t
r
2
VDS
ID = 18 A
15
QG - Gate Charge - nC
0
0
5
10
20
0.1
1
10
100
ID - Drain Curre
SOURCE TO DIODE
FORWARGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
100
V
GS = 10 V
4.5 V
0 V
1
di / dt = 100 A/μs
0.1
0.01
V
GS = 0 V
Pulsed
10
0.1
1
10
100
0
0.5
1
1.5
IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet D17323EJ2V0DS
2SK3984
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
1000
100
10
V
R
V
DD = 50 V
= 25 Ω
GS = −20 → 0 V
Starting Tch = 25°C
G
I
AS = 10 A
E
AS = 10 mJ
1
10 μ
100 μ
1 m
10 m
L - Inductive Load - H
6
Data Sheet D17323EJ2V0DS
2SK3984
PACKAGE DRAWINGS (Unit: mm)
TO-252 (MP-3ZK)
2.3 0.1
6.5 0.2
5.1 TYP.
4.3 MIN.
0.5 0.1
No Plating
4
1
2
3
No Plating
0.76 0.12
1.14 MAX.
0 to 0.25
0.5 0.1
2.3 2.3
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode conected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
7
Data Sheet D17323EJ2V0DS
2SK3984
•
The information in this document is current as of April, 2006. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NElectronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by ans without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsr any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patpyrights or other intellectual
property rights of third parties by or arising from the use of NEC Elecroducts listed in this document
or any other liability arising from the use of such products. No , express, implied or otherwise, is
granted under any patents, copyrights or other intellectual propertof NEC Electronics or others.
Descriptions of circuits, software and other related informatis document are provided for illustrative
purposes in semiconductor product operation and apexamples. The incorporation of these
circuits, software and information in the design of a er's equipment shall be done under the full
responsibility of the customer. NEC Electronics ano responsibility for any losses incurred by
customers or third parties arising from the use of tcuits, software and information.
•
• While NEC Electronics endeavors to enhance ity, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the pty of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property o(including death) to persons arising from defects in NEC
Electronics products, customers musporate sufficient safety measures in their design, such as
redundancy, fire-containment and ae features.
• NEC Electronics products are cinto the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grades only to NEC Electronics products developed based on a customer-
designated "quality assuogram" for a specific application. The recommended applications of an NEC
Electronics product deits quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronuct before using it in a particular application.
"Standard": Com, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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