2SK4028DF-A [RENESAS]
TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,150UA I(DSS),SOT-416VAR;
| 型号： | 2SK4028DF-A |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | TRANSISTOR,JFET,N-CHANNEL,20V V(BR)DSS,150UA I(DSS),SOT-416VAR |
| 文件： | 总5页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
JUNCTION FIELD EFFECT TRANSISTOR
2SK4028
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK4028 is suitable for converter of ECM.
1.2 0.1
+0.1
0.3
–0.05
MAX. 0.33
FEATURES
• High gain
3
0 to 0.02
−1.0 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
• Low noise
2
1
−115 dB (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ)
• Ultra thin thickness package
t = 0.3 mm TYP.
+0.1
0.13
–0.05
0.4
0.4
ORDERING INFORMATION
+0.1
0.2
PART NUMBER
PACKAGE
–0
2SK4028
3pXSOF03 (0812)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
EQUIVALENT CIRCUIT
Drain to Source Voltage (VGS = −1.0 V)
Gate to Drain Voltage
Drain Current
VDSX
VGDO
ID
20
−20
V
V
2
10
mA
mA
mW
°C
3
Gate Current
IG
10
Total Power Dissipation
Junction Temperature
Storage Temperature
PT
100
1
Tj
125
1: Source
2: Drain
3: Gate
Tstg
−55 to +125
°C
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17529EJ1V0DS00 (1st edition)
Date Published April 2005 NS CP(K)
Printed in Japan
2005
2SK4028
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Cut-off Current
Gate Cut-off Voltage
SYMBOL
TEST CONDITIONS
MIN.
90
TYP.
250
MAX.
430
UNIT
µA
V
IDSS
VDS = 2.0 V, VGS = 0 V
VGS(off)
| yfs1 |
| yfs2 |
Ciss
VDS = 2.0 V, ID = 1.0 µA
−0.37
470
−1.0
Forward Transfer Admittance
VDS = 2.0 V, ID = 30 µA, f = 1.0 kHz
VDS = 2.0 V, VGS = 0 V, f = 1.0 kHz
VDS = 2.0 V, VGS = 0 V, f = 1.0 MHz
VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ,
VIN = 10 mV, f = 1 kHz
320
800
µS
µS
pF
1600
4.0
Input Capacitance
Voltage Gain
GV
−1.0
dB
Noise Voltage
NV
VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ,
A-curve
−115
dB
IDSS CLASSIFICATION
MARKING
DE
DF
150 to 240
DH
DJ
320 to 430
IDSS (µA)
90 to 180
210 to 350
GAIN TEST CIRCUIT
VDD
R
L
Out
C
NOISE VOLTAGE TEST CIRCUIT
VDD
RL
JIS A
NV (r.m.s)
C
2
Data Sheet D17529EJ1V0DS
2SK4028
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF POWER DISSIPATION
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1000
120
100
80
60
40
20
0
Pulsed
0.20 V
800
600
400
0.15 V
µ
0.10 V
0.05 V
−0.05 V
200
0
VGS = 0 V
0
2
4
6
8
10
0
25
50
75 100 125 150 175
VDS - Drain to Source Voltage - V
TA - Ambient Temperature - °C
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
40
30
µ
20
µ
10
−0.8 −0.6 −0.4 −0.2
0
0.2 0.4 0.6 0.8
−10
−20
−30
−40
VGS - Gate to Source Voltage - V
VGS - Gate to Source Voltage - V
INPUT CAPACITANCE vs.
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
DRAIN TO SOURCE VOLTAGE
10
10
VGS = 0 V
f = 1.0 MHz
VDS = 2.0 V
| yfs |
1
VGS(off)
1
0.1
1
10
VDS - Drain to Source Voltage - V
100
10
100
1000
IDSS - Zero Gate Voltage Drain Current - µA
3
Data Sheet D17529EJ1V0DS
2SK4028
VOLTAGE GAIN vs. DRAIN CURRENT
NOISE VOLTAGE vs. DRAIN CURRENT
2
1
-110
-112
-114
-116
-118
-120
V
DD = 2.0 V
V
DD = 2.0 V
C = 5 pF
= 2.2 kΩ
C = 5 pF
R
L
= 2.2 kΩ
IN = 10 mV
f = 1 kHz
R
L
0
V
-1
-2
-3
-4
-5
10
100
IDSS - Drain Current - µA
1000
10
100
IDSS - Drain Current - µA
1000
4
Data Sheet D17529EJ1V0DS
2SK4028
•
The information in this document is current as of April, 2005. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
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•
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M8E 02. 11-1
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