2SK4036-T-AZ [RENESAS]
Switching N-Channel Power Mosfet, TO-92, /Tape;
| 型号： | 2SK4036-T-AZ |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Switching N-Channel Power Mosfet, TO-92, /Tape |
| 文件： | 总8页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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April 1st, 2010
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK4036
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK4036 is the best switching element for the DC-DC
converter usage from 24 to 48 V in the direct current input
voltage.
φ
5.2 MAX.
It excels in the switching characteristics in low on-state
resistance, and is the best for the high-speed switching usage.
FEATURES
• Low input capacitance
0.5
Ciss = 74 pF TYP.
• Low on-state resistance
RDS(on) = 4.5 Ω MAX. (VGS = 10 V, ID = 0.25 A)
• Through hole mount package (TO-92)
1.27
2.54
1. Gate
1
2
3
2. Drain
3. Source
ORDERING INFORMATION
PART NUMBER
PACKAGE
TO-92 (SC-43A)
TO-92 (SC-43A)
2SK4036
Note
2SK4036-AZ
Note Pb-free (This product does not contain Pb in external
EQUIVALENT CIRCUIT
electrode.)
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) Note
VDSS
VGSS
ID(DC)
ID(pulse)
PT
250
±30
V
Body
Diode
V
A
Gate
±0.5
±2.0
A
Gate
Protection
Diode
Total Power Dissipation (TA = 25°C)
Channel Temperature
0.75
W
°C
°C
Source
Tch
150
Storage Temperature
Tstg
−55 to +150
Note PW ≤ 10 μs, Duty Cycle ≤ 1%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D17448EJ2V0DS00 (2nd edition)
Date Published August 2006 NS CP(K)
Printed in Japan
2005
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2SK4036
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
SYMBOL
IDSS
TEST CONDITIONS
VDS = 250 V, VGS = 0 V
MIN.
TYP.
MAX.
10
UNIT
μA
μA
V
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
VGS = ±30 V, VDS = 0 V
VDS = 10 V, ID = 1.0 mA
VDS = 10 V, ID = 0.25 A
VGS = 10 V, ID = 0.25 A
VDS = 10 V
±10
4.5
Gate Cut-off Voltage
2.5
0.2
3.5
0.5
3.2
74
16
7
Note
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
S
Note
4.5
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Coss
Crss
VGS = 0 V
f = 1.0 MHz
td(on)
tr
VDD = 125 V, ID = 0.25 A
VGS = 10 V
7
5
Turn-off Delay Time
Fall Time
td(off)
tf
RG = 10 Ω
12
40
4
Total Gate Charge
QG
VDD = 200 V
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
VF(S-D)
trr
VGS = 10 V
0.9
2
ID = 0.5 A
Note
Body Diode Forward Voltage
IF = 0.5 A, VGS = 0 V
IF = 0.5 A, VGS = 0 V
di/dt = 100 A/μs
0.84
42
57
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
Qrr
Note Pulsed
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
I
G
= 2 mA
RL
V
V
GS
0
R
L
90%
V
GS
Wave Form
V
GS
10%
90%
RG
PG.
V
DD
50 Ω
PG.
V
DD
DS
90%
V
0
GS
V
DS
10% 10%
V
DS
Wave Form
0
τ
t
d(on)
t
r
t
d(off)
t
f
τ = 1 s
μ
Duty Cycle ≤ 1%
t
on
t
off
2
Data Sheet D17448EJ2V0DS
2SK4036
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
120
100
80
60
40
20
0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
25
50
75 100 125 150 175
0
25
50
75 100 125 150 175
TA - Ambient Temperature - °C
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10
1
I
I
D(pulse)
D(DC)
0.1
0.01
Single pulse
0.001
0.01
0.1
1
10
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
100
10
Rth(ch-A) = 166.7°C/W
1
Single pulse
100 1000
0.1
100μ
1 m
10 m
100 m
1
10
PW - Pulse Width - s
3
Data Sheet D17448EJ2V0DS
2SK4036
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
2
1
0
10
1
V
GS = 10 V
V
DS = 10 V
Pulsed
Pulsed
T
A
= − 55℃
− 25℃
25℃
0.1
0.01
75℃
125℃
150℃
0.001
0.0001
0.00001
0
5
10
15
0
2
4
6
8
10
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
<R>
7
6
5
4
3
2
1
0
10
1
V
DS = 10 V
= 1.0 mA
T
A
= − 55℃
− 25℃
25℃
I
D
75℃
125℃
150℃
0.1
0.01
V
DS = 10 V
Pulsed
-75
-25
25
75
125
175
0.01
0.1
1
10
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
8
8
VGS = 10 V
I
D
= 0.25 A
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Puls ed
Pulsed
0.01
0.1
1
10
0
5
10
15
20
25
30
ID - Drain Current - A
VGS - Gate to Source Voltage - V
4
Data Sheet D17448EJ2V0DS
2SK4036
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
1000
8
ID = 0.25 A
Puls ed
7
6
5
100
Ciss
4
VGS = 10 V
3
2
1
0
Coss
10
1
VGS = 0 V
f = 1 MHz
Crss
-75
-25
25
75
125
175
0.01
0.1
1
10
100
1000
Tch - Channel Temperature - °C
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
VDD = 200 V
100
VGS = 10 V
DD = 125 V
RG = 10 Ω
200
10
125 V
50 V
V
8
6
4
2
0
150
100
50
td(off)
10 td(on)
VGS
tr
tf
VDS
ID = 0.5 A
4
1
0
0.1
1
10
0
1
2
3
5
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
10
di / dt = 100 A / μs
V
GS = 0 V
1
0.1
VGS = 0 V
Puls ed
0.01
1
0
0.5
1
1.5
0.1
1
10
IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
5
Data Sheet D17448EJ2V0DS
2SK4036
•
The information in this document is current as of August, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
•
NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
•
• While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products,
customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
Electronics products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment and anti-failure features.
• NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and
"Specific".
The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-
designated "quality assurance program" for a specific application. The recommended applications of an NEC
Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of
each NEC Electronics product before using it in a particular application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots.
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
determine NEC Electronics' willingness to support a given application.
(Note)
(1)
"NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its
majority-owned subsidiaries.
(2)
"NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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