3SK242-T2-V11 [RENESAS]
RF SMALL SIGNAL, FET;
| 型号： | 3SK242-T2-V11 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | RF SMALL SIGNAL, FET |
| 文件： | 总8页 (文件大小：176K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To our customers,
Old Company Name in Catalogs and Other Documents
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1st, 2010
Renesas Electronics Corporation
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
2.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website.
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of third parties by or arising from the use of Renesas Electronics products or technical information described in this document.
No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights
of Renesas Electronics or others.
3.
4.
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expressly specified in a Renesas Electronics data sheets or data books, etc.
“Standard”:
Computers; office equipment; communications equipment; test and measurement equipment; audio and visual
equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots.
“High Quality”: Transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-
crime systems; safety equipment; and medical equipment not specifically designed for life support.
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(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
3SK242
RF AMPLIFIER AND MIXER FOR VHF TV TUNER
N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR
4 PINS SUPER MINI MOLD
FEATURES
PACKAGE DIMENSINS
(Unit : mm)
•
•
•
•
Low Noise Figure : NF = 1.3 dB TYP.
High Power Gain : Gps = 24 dB TYP. (f = 200 MHz)
Suitable for use as RF amplifier in VHF TV tuner.
Small Package : 4 Pins Super Mini Mold
2.1±0.2
25±0
ORDERING INFORMATION
PART
QUANTITY
NUMBER
PACKING STYLE
3SK242-T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Gate2), Pin4 (Gate1) face
to perforation side of the tape.
3SK242-T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Source), Pin2 (Drain)
to perforation side of thtape
*
Please contact with responsible NEC pesn, if yu require
evaluation sample. Unit sample quanty shall be 50 pcs.
(Part No.: 3SK242)
PIN CONNECTIONS
1. Source
2. Drain
3. Gate2
4. Gate1
ABSOLUTE MAXIMUM RTIGS (TA = 25 °C)
Drain to Source Voltage
Gate1 to Source Voltag
Gate2 to Source Voltage
Drain Current
VDSX
VG1S
VG2S
ID
20
V
V
±8
±8
V
25
mA
mW
°C
°C
Total Power Dissipatn
Channel Teerare
Storge Tmperature
PD
130*1/250*2
Tch
125
Tstg
–55 to +125
ee air
*2: 15 mm × 15 mm × 1.2 mm board by epoxy glass
PRECAUTION
Avoid high static voltages or electric fields so that this device would not suffer from any damage due to those voltage
or fields.
Document No. P10577EJ2V0DS00 (2nd edition)
(Previous No. TD-2311)
Date Published August 1995 P
Printed in Japan
1993
©
3SK242
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
Drain to Source Breakdown Voltage
Drain Current
SYMBOL
BVDSX
IDSS
MIN.
20
TYP.
MAX.
UNIT
V
TEST CONDITION
VG1S = VG2S = –2 V, ID = 10 µA
VDS = 6 V, VG2S = 3 V, VG1S = 0
VDS = 8 V, VG2S = 0 , ID = 5 µA
VDS = 8 V, VG1S = 0, ID = 5 µA
VDS = 0, VG2S = 0, VG1S = ±8 V
VDS = 0, VG1S = 0, VG2S = ±8 V
7.0
25
mA
V
Gate1 to Source Cutoff Voltage
Gate2 to Source Cutoff Voltage
Gate1 Reverse Current
VG1S(off)
VG2S(off)
IG1SS
–2.0
–1.5
±20
±20
V
nA
nA
mS
Gate2 Reverse Current
IG2SS
Forward Transfer Admittance
|yfs|
22
28
VDS = 6 V, VG2S = 3 V, ID = 10 mA
f = 1 kHz
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Power Gain
Ciss
Coss
Crss
Gps
NF
4.0
2.2
5.0
2.9
0.05
24
6.5
3.7
pF
pF
pF
dB
dB
VDS = 6 V, VG2S = V, I= 1mA
f = 1 MHz
0.08
21
VDS = 10 = 5 V, ID = 10 mA
f = 20
Noise Figure
1.3
2.5
IDSX Classification
Rank
V11/VAA*
V11
V12/VAB*
V12
V13/VAC*
V13
Marking
IDSS (mA)
7.0 to 13.0
11.0 to 19.0
17.0 to 25.0
Old Specification / New Specification
2
3SK242
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
20
10
VG2 = 3.0 V
200
V
G1S = 0 V
–0.1
–0.2
130 mW
100
–0.3
–0.4
–0.5
–0.6
0
25
50
75
100
125
0
10
VDS – Drain to Source Voltage – V
20
T
A
– Ambient Temperature – °C
DRAIN CURRENT vs.
GATE1 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
GATE1 TO SOURCE VOLTAGE
20
oduct
3
V
4V
VDS = 6 V
2
V
V
G2S = 5 V
1 V
40
20
4 V
3 V
10
2 V
VG2S = 0
1 V
ued Pr
0 V
0
+1.0
–1.0
0
1.0
–1.0
0
V
G1S – Gate1 to Source Voltage – V
VG1S – Gate1 to Source Voltage – V
INPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
30
25
20
15
10
5
V
DS = 6.0 V
f = 1 MHz
8.0
6.0
4.0
V
G1S = 0, 0.5 V
V
DS = 6 V
G2 = 3 V
2.0
0
V
Discontin
f = 1.0 kHz
0
20
–1.0
0
1.0
2.0
3.0
4.0
10
I
D
– Drain Current – mA
VG2S – Gate2 to Source Voltage – V
3
3SK242
OUTPUT CAPACITANCE vs.
GATE2 TO SOURCE VOLTAGE
NOISE FIGURE vs. DRAIN CURRENT
f = 200 MH
5.0
4.0
3.0
2.0
Z
V
DS = 6.0 V
V
V
V
V
DS = 10 V
G2S = 5 V
DS = 5 V
f = 1.0 MHz
4.0
3.0
2.0
1.0
G2S = 3 V
VG1S = 0 V
–0.5 V
1.0
0
–1.0
0
1.0
2.0
3.0
4.0
0
2
4
6
8
10
VG2S – Gate2 to Source Voltage – V
ID – Drain Current – mA
NOISE FIGURE, POWER GAIN vs.
GATE2 TO SOURCE VOLTAGE
f = 200 MH
Z
DS = 10 V
DS = 5 V
V
V
30
20
4
G
PS
3
10
2
1
0
NF
–10
0
–1
0
1
2
3
4
5
6
7
8
V
G2S – Gate2 to Source Voltage – V
Gps AND NF TEST CIRCUIT AT f = 200 MHz
V
G2S
TEST CONDITION
000
VDS = 10 V, VG2S = 5 V, ID = 10 mA
f = 200 MHz
L1: φ 0.6 mm U.E.W. 7 mm 3T
L2: φ 0.6 mm U.E.W. 7 mm 3T
L3: RFC 2.2 µH
22 kΩ
1 000 p
Ferrite Beads
7 pF OUTPUT
50 Ω
INP
50 Ω
L
2
L1
1 000 pF
1 000 pF
15 pF
200 Ω
1 000 pF
15 pF
L
3
22 kΩ
1 000 pF
1 000 pF
VG1S
V
DS
4
3SK242
[MEMO]
5
3SK242
No part of this document may be copied or reproduced in any form or by any means withprior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors whicappear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrr other intellectual
property rights of third parties by or arising from use of a device described hereor any other liability arising
from use of such device. No license, either express, implied or otheis ganted under any patents,
copyrights or other intellectual property rights of NEC Corporation or ot
While NEC Corporation has been making continuous effort to enhance the reliility of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minime risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, mer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, ani-failure features.
NEC devices are classified into the following three quality es:
“Standard“, “Special“, and “Specific“. The Specific quality radapplies only to devices developed based on
a customer designated “quality assurance program“ for a pecific application. The recommended applications
of a device depend on its quality grade, as indicated blow. Customers must check the quality grade of each
device before using it in a particular application
Standard: Computers, office equipment, comunications equipment, test and measurement equipment,
audio and visual equipmnt, hme lectronic appliances, machine tools, personal electronic
equipment and industrial robts
Special: Transportation equipmen(automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime stemssafety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerosquipment, submersible repeaters, nuclear reactor control systems, life
support systems edical equipment for life support, etc.
The quality grade of NEdevies in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to uEC devices for applications other than those specified for Standard quality grade,
they should contct C Sales Representative in advance.
Anti-radioactivdesign is not implemented in this product.
M4 94.11
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