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元器件品牌
3SK298
[RENESAS]
Silicon N-Channel Dual Gate MOS FET; 硅N沟道双栅MOS FET
元器件型号：
3SK298
生产厂家：
RENESAS TECHNOLOGY CORP
描述和应用：
Silicon N-Channel Dual Gate MOS FET
硅N沟道双栅MOS FET
晶体 小信号场效应晶体管 射频小信号场效应晶体管 光电二极管 栅 放大器
PDF文件：
总9页 (文件大小：191K)
下载文档：
下载PDF数据表文档文件
型号参数：3SK298参数
查看货源
3SK298ZP
RF Small Signal Field-Effect Transistor, Very High Frequency Band, Silicon, N-Channel
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HITACHI
3SK298ZP-TL
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CMPAK-4
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0
HITACHI
3SK298ZP-TL
暂无描述
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156
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0
RENESAS
3SK298ZP-TL-E
Silicon N-Channel Dual Gate MOS FET
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156
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19
RENESAS
3SK298ZP-TR
暂无描述
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156
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0
HITACHI
3SK298ZP-UL
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, CMPAK-4
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156
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0
RENESAS
3SK299
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD
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142
NEC
3SK299
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, PLASTIC, SO-4
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156
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0
RENESAS
3SK299
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SO-4
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156
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0
NEC
3SK299(NE25118)
Discrete
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156
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61
ETC
3SK299-A
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SO-4
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156
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0
NEC
3SK299-A
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SO-4
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: Undefined variable $rtag in
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156
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0
NEC
3SK299-U71
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4
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156
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0
NEC
3SK299-U71-A
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SO-4
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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0
NEC
3SK299U72
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, MINIMOLD PACKAGE-4
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0
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