ACTS541K/SAMPLE-02-T
更新时间:2024-09-18 18:09:59
品牌:RENESAS
描述:ACT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDFP20
ACTS541K/SAMPLE-02-T 概述
ACT SERIES, 8-BIT DRIVER, TRUE OUTPUT, CDFP20 总线驱动器/收发器
ACTS541K/SAMPLE-02-T 规格参数
生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | 风险等级: | 5.04 |
其他特性: | WITH DUAL OUTPUT ENABLE | 系列: | ACT |
JESD-30 代码: | R-CDFP-F20 | 逻辑集成电路类型: | BUS DRIVER |
位数: | 8 | 功能数量: | 1 |
端口数量: | 2 | 端子数量: | 20 |
输出特性: | 3-STATE | 输出极性: | TRUE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLATPACK | 传播延迟(tpd): | 21 ns |
认证状态: | Not Qualified | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
端子形式: | FLAT | 端子位置: | DUAL |
Base Number Matches: | 1 |
ACTS541K/SAMPLE-02-T 数据手册
通过下载ACTS541K/SAMPLE-02-T数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载ACTS541T
Semiconductor
Data Sheet
January 1999
File Number 4612
Radiation Hardened Octal Three-State
Buffer/Line Driver
Features
• QML Class T, Per MIL-PRF-38535
Harris’ Satellite Applications FlowTM (SAF) devices are fully
tested and guaranteed to 100kRAD total dose. These QML
Class T devices are processed to a standard flow intended
to meet the cost and shorter lead-time needs of large
volume satellite manufacturers, while maintaining a high
level of reliability.
• Radiation Performance
5
- Gamma Dose (γ) 1 x 10 RAD(Si)
- Latch-Up Free Under Any Conditions
-10
- Single Event Upset (SEU) Immunity: <1 x 10
Errors/Bit/Day (Typ)
2
- SEU LET Threshold . . . . . . . . . . . . .>100 MEV-cm /mg
• 1.25 Micron Radiation Hardened SOS CMOS
• Significant Power Reduction Compared to ALSTTL Logic
• DC Operating Voltage Range. . . . . . . . . . . . 4.5V to 5.5V
• Input Logic Levels
The Harris ACTS541T is a Radiation Hardened Octal
Buffer/Line Driver, with three-state outputs. The output
enable pins OE1, OE2 control the three-state outputs. If
either enable is high the output will be in a high impedance
state. For data output both enables must be low.
Specifications
- V = 0.8V Max
IL
- V = VCC/2 Min
IH
Specifications for Rad Hard QML devices are controlled by
the Defense Supply Center in Columbus (DSCC). The SMD
numbers listed below must be used when ordering.
• Fast Propagation Delay . . . . . . . . 21ns (Max), 14ns (Typ)
Pinouts
Detailed Electrical Specifications for the ACTS541T are
contained in SMD 5962-96726. A “hot-link” is provided from
our website for downloading.
ACTS541T (SBDIP), CDIP2-T20
TOP VIEW
http://www.semi.harris.com/families/smdrh.htm
1
2
3
4
5
6
7
8
9
V
OE1
A0
A1
A2
A3
A4
A5
A6
A7
20
19
CC
Harris’ Quality Management Plan (QM Plan), listing all Class
T screening operations, is also available on our website.
http://www.semi.harris.com/quality/manuals.htm
OE2
18 Y0
17 Y1
16 Y2
15 Y3
14 Y4
13 Y5
Ordering Information
TEMP.
ORDERING
NUMBER
PART
NUMBER
RANGE
o
( C)
12
Y6
5962R9672602TRC
ACTS541D/Sample-02
5962R9672602TXC
ACTS541K/Sample-02
ACTS541DTR-02
-55 to 125
25
GND 10
11 Y7
ACTS541D/Sample-02
ACTS541KTR-02
-55 to 125
25
ACTS541T (FLATPACK), CDFP4-F20
TOP VIEW
ACTS541K/Sample-02
V
OE1
A0
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
NOTE: Minimum order quantity for -T is 1000 units
Orders must be placed through Harris Sales or Rep Offices.
CC
OE2
Y0
Y1
Y2
Y3
Y4
Y5
A1
A2
A3
A4
A5
A6
A7
Y6
Y7
GND
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS | Copyright © Harris Corporation 1999
1
Satellite Applications Flow™ (SAF) is a trademark of Harris Corporation.
ACTS541T
Functional Diagram
V
CC
2
18
17
16
15
A0
Y0
Y1
Y2
Y3
1
OE1
GND
19
V
OE2
CC
3
A1
GND
V
CC
4
A2
GND
V
CC
5
A3
GND
V
CC
6
14
13
A4
Y4
Y5
GND
V
CC
7
A5
GND
V
CC
8
12
11
A6
Y6
Y7
GND
V
CC
9
GND V
10
A7
CC
20
GND
TRUTH TABLE
INPUTS
OUTPUTS
OE1
L
OE2
L
An
H
L
Yn
H
L
L
L
H
X
X
Z
X
H
X
Z
NOTE: L = Low Logic Level, H = High Logic Level, Z = High Impedance.
2
ACTS541T
Die Characteristics
DIE DIMENSIONS:
PASSIVATION:
Type: Silox (S O )
(2600µm x 2600µm x 533µm ±51µm)
102 x 102 x 21mils ±2mil
i
2
Thickness: 8.0kÅ ±1.0kÅ
METALLIZATION:
Type: Al Si Cu
WORST CASE CURRENT DENSITY:
2
< 2.0e5 A/cm
Thickness: 10.0kÅ ±2kÅ
TRANSISTOR COUNT:
SUBSTRATE POTENTIAL:
182
Unbiased (Silicon on Sapphire)
PROCESS:
Bond Pad #20 (V ) First
CC
CMOS SOS
BACKSIDE FINISH:
Sapphire
Metallization Mask Layout
ACTS541T
(17) Y1
A2 (4)
A3 (5)
NC
(16) Y2
NC
NC
NC
A4 (6)
A5 (7)
(15) Y3
(14) Y4
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate
and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
For information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS or see web site http://www.semi.harris.com
3
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