AU01-33 [RENESAS]
33 V, 2.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE;
| 型号： | AU01-33 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 33 V, 2.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE 测试 二极管 |
| 文件： | 总4页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ZENER DIODE
AU01
FEATURES
OUTLINE DRAWING
Unit in mm(inch)
• For stabilized power supply.
• Diffused-junction. Glass passivated and
encapsulated.
φ
1.2
(0.05)
Direction of polarity
07OA
Weight: 1.0 (g)
ABSOLUTE MAXIMUM RATINGS
Ratings
Items
Symbols Units
Permissible Power Dissipation
Operating Junction Temperature
Storage Temperature
P
W
°C
°C
mA
2.5
Tj
-40 ~ +165
-40 ~ +165
Tstg
IZM
Refer to characteristics column
160
Maximum Permissible Current
Non-Repetitive Peak Reverse One-
Cycle Dissipation
PRSM
Wp
Notes (1) Lead mounting : Lead temperature 280°C max. to 3.2mm from body for 5sec. max..
(2) Mechanical strength : Bending 90°×2 cycles or 180°×1 cycle, Tensile 3kg, Twist 90°×1 cycle.
CHARACTERISTICS(TL=25°C)
Typical
Zener
Voltage
Characteristics
Maximum
Permissible
Current
(TL=85°C)
(L=10mm)
IZM(mA)
Zener Voltage Vz (V)
Maximum
Test Current
Type
Dynamic
Impedance
Zz (ohm)
Temperature
Coefficient
Iz
(mA)
Minimum
Maximum
γ
z(%/°C)
AU01-07
AU01-08
AU01-09
AU01-10
AU01-11
AU01-12
AU01-13
AU01-15
AU01-16
AU01-18
AU01-20
AU01-22
AU01-24
AU01-27
AU01-30
AU01-33
6.2
7.7
7.9
7
3
65
65
65
65
65
65
65
40
40
40
40
40
25
25
25
25
335
300
260
235
210
185
175
162
150
130
120
107
100
87
0.035
0.052
0.062
0.067
0.070
0.074
0.076
0.080
0.082
0.084
0.086
0.087
0.089
0.090
0.091
0.092
8.7
8.5
9.6
3
9.4
10.6
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
32.0
35.0
5
10.4
11.4
12.4
13.5
15.3
16.8
18.8
20.8
22.7
25.1
28.0
31.0
5
8
8
12
12
15
15
15
15
15
15
15
80
75
PDE-AU01-0
AU01
Typical zener characteristics
Typical dynamic impedance vs. zener current
450
400
350
300
250
200
150
100
50
50
TL=25˚C
10
AU01-24
AU01-16
1
AU01-07
0.3
0
3
10
100
0
4
8
12
16
20
24
28
32
ZENER CURRENT (mA)
ZENER VOLTAGE (V)
Max. allowable power dissipation vs. ambient temperature
Max. allowable power dissipation vs. lead temperature
4
4
L
L
L
L
Lead temp
PC board
(100x180x1.6t)
Copper foil ( 5.5)
3
2
1
0
3
2
1
0
PC board (100x180x1.6t)
Copper foil ( 5.5)
Lead length
L=10mm
20mm
Lead length
L=10mm
20mm
25mm
25mm
0
50
100
150
200
0
50
100
150
200
AMBIENT TEMPERATURE (˚C)
LEAD TEMPERATURE (˚C)
Reverse power characteristic
Steady state thermal impedance
(Non-repetitive)
200
120
Ambient temp. measured point
Reverse
instantaneous
loss
Lead temp.
measured poin
Lead
length
10ms
1 cycle
100
80
60
40
20
0
(φ0.5 thermocouple)
Copper foil ( 5.5)
2
160
120
80
PC board
(100×180×1.6t)
Lead
length
Rth(j - a)
Rth(j - l)
40
0
1
0
5
10
15
20
25
30
10
100
LEAD LENGTH (mm)
CYCLES
PDE-AU01-0
AU01
Transient thermal impedance
Definition of zener characteristics
100
Rth(j - a)
Rth(j - l)
Lead length = 10 mm
I
F
∆Vz
Vz
V
F
10
I
Iz
AC
V
AC
∆V :Zener voltage change
z
1
V
:Zener voltage (Test current I )
z
z
I
:Test current
z
Z
:Dynamic impedance=V
:Forward current
:Forward voltage drop
/ I
AC AC
Note : PC. board mounted
PC. board( 100 × 180 × 1.6t)
Copper foil ( 5.5 )
z
I
F
V
F
γz :Zener voltage average temperature coefficients
∆Vz
0.1
0.001
0.01
0.1
TIME (s)
1
10
100
1
=
×
×100
Vz (165-25)
PDE-AU01-0
HITACHI POWER SEMICONDUCTORS
Notices
1.The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are adviced to contact Hitachi sales department for the latest version of this
data sheets.
2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure
before use.
3.In cases where extremely high reliability is required(such as use in nuclear power control,
aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel
control equipment and various kinds of safety equipment), safety should be ensured by
using semiconductor devices that feature assured safety or by means of users’ fail-safe
precautions or other arrangement. Or consult Hitachi’s sales department staff.
4.In no event shall Hitachi be liable for any damages that may result from an accident or
any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
may result from applications of information, products or circuits described in this data
sheets.
5.In no event shall Hitachi be liable for any failure in a semiconductor device or any
secondary damage resulting from use at a value exceeding the absolute maximum rating.
6.No license is granted by this data sheets under any patents or other rights of any third
party or Hitachi, Ltd.
7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part ,
without the expressed written permission of Hitachi, Ltd.
8.The products (technologies) described in this data sheets are not to be provided to any
party whose purpose in their application will hinder maintenance of international peace
and safety not are they to be applied to that purpose by their direct purchasers or any
third party. When exporting these products (technologies), the necessary procedures are
to be taken in accordance with related laws and regulations.
For inquiries relating to the products, please contact nearest overseas representatives which is located
“Inquiry” portion on the top page of a home page.
Hitachi power semiconductor home page address http://www.hitachi.co.jp/pse
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