概述
数据手册BCR16PM-12LD-A8 概述
Triac Medium Power Use 三端双向可控硅中功率使用
BCR16PM-12LD-A8 数据手册
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PDF下载BCR16PM-12LD
Triac
Medium Power Use
REJ03G1562-0100
Rev.1.00
Jul 06, 2007
Features
•
•
•
•
IT (RMS) : 16 A
VDRM : 600 V
•
The product guaranteed maximum junction
temperature 150°C.
Insulated Type
Planar Type
I
FGTI, IRGTI, IRGTIII : 50 mA
•
•
Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Motor control, heater control
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
12
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
VDRM
VDSM
600
700
V
V
REJ03G1562-0100 Rev.1.00 Jul 06, 2007
Page 1 of 7
BCR16PM-12LD
Parameter
Symbol
Ratings
Unit
Conditions
RMS on-state current
Surge on-state current
I2t for fusing
IT (RMS)
16
A
Commercial frequency, sine full wave
360° conduction, Tc = 60°C
ITSM
I2t
96
38
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
PGM
PG (AV)
VGM
IGM
5
W
W
V
0.5
10
2
Peak gate current
A
Junction temperature
Storage temperature
Mass
Tj
– 40 to +150
– 40 to +150
2.0
°C
°C
g
Tstg
—
Typical value
Isolation voltage
Viso
1500
V
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
Min.
Typ.
—
Max.
2.0
Unit
mA
V
Test conditions
—
—
Tj = 125°C, VDRM applied
VTM
—
1.75
Tc = 25°C, ITM = 25 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
Ι
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
50
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
VRGT
Ι
VRGT
V
ΙΙΙ
Gate trigger currentNote2
IFGT
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Ι
ΙΙ
ΙΙΙ
IRGT
50
Ι
IRGT
50
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
VGD
0.2
—
—
—
—
—
4.1
—
V
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125°C
Rth (j-c)
(dv/dt)c
°C/W
V/µs
Critical-rate of rise of off-state
commutating voltageNote4
10
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125°C
(di/dt)c
2. Rate of decay of on-state commutating current
(di/dt)c = – 8 A/ms
Time
Time
Main Current
Main Voltage
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
REJ03G1562-0100 Rev.1.00 Jul 06, 2007
Page 2 of 7
BCR16PM-12LD
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
7
120
100
80
Tj = 25°C
5
3
2
101
7
5
60
3
2
100
7
40
20
0
5
3
2
10–1
100
2
3
5 7 101
2
3
5 7 102
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics (I, II and III)
102
7
5
103
7
Typical Example
5
3
2
101
7
5
IRGTIII
V
= 10 V
GM
3
2
P
= 5 W
GM
P
G(AV)
= 0.5 W
102
7
3
2
100
7
5
V
= 1.5 V
GT
IFGTI
I
= 2 A
GM
5
I
I
I
FGT I
3
2
RGT I
RGT III
IRGTI
3
2
V
= 0.2 V
GD
101
10–1
101
2
3
5 7102
2
3
5 7103
2
3
5 7104
–60–40–20 0 20 40 60 80 100120140160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
102
2
3
5 7103
2
3
5 7104
103
7
5.0
Typical Example
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
5
3
2
102
7
5
3
2
101
10–1
2
3
5 7100
2
3
5 7101
2
3
5 7102
–60–40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
Conduction Time (Cycles at 60 Hz)
REJ03G1562-0100 Rev.1.00 Jul 06, 2007
Page 3 of 7
BCR16PM-12LD
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Maximum On-State Power Dissipation
25
103
7
5
No Fins
3
2
20
15
10
5
102
7
360° Conduction
Resistive,
inductive loads
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0
0
101 2 3 5 7102 2 3 5 7103 2 3 5 7104 2 3 5 7105
2
4
6
8 10 12 14 16 18 20
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
140
120
100
80
All fins are black painted
aluminum and greased
Curves apply regardless
of conduction angle
140
120
100
80
120 × 120 × t2.3
100 × 100 × t2.3
60 × 60 × t2.3
60
60
Curves apply
regardless of
40
40
conduction angle
Resistive,
360° Conduction
Resistive,
inductive loads
20
20
inductive loads
Natural convection
0
0
0
0
2
4
6
8
10 12 14 16 18 20
2
4
6
8 10 12 14 16 18 20
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
6
10
160
140
120
100
80
7
5
3
2
Typical Example
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
5
10
7
5
3
2
4
10
7
5
3
2
60
3
10
40
7
5
3
2
20
2
0
0
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
–60–40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
REJ03G1562-0100 Rev.1.00 Jul 06, 2007
Page 4 of 7
BCR16PM-12LD
Holding Current vs.
Junction Temperature
Latching Current vs.
Junction Temperature
103
7
103
7
Typical Example
Distribution
–
+
T
, G
5
2
5
Typical Example
3
2
102
7
5
3
2
102
7
3
2
101
7
5
+
+
, G
Typical Example
T
2
3
2
5
–
–
T
, G
Typical Example
2
3
2
101
100
–60–40–20 0 20 40 60 80 100120140 160
–60–40–20 0 20 40 60 80 100 120 140160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs. Rate of
Rise of Off-State Voltage (Tj = 125°C)
160
160
Typical Example
Typical Example
Tj = 125°C
140
120
100
80
140
120
100
80
III Quadrant
I Quadrant
60
60
40
40
20
20
0
0
–60 –40–20 0 20 40 60 80 100120140160
101
2
3
5 7102
2
3
5 7103
2
3
5 7104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs. Rate of
Rise of Off-State Voltage (Tj = 150°C)
Commutation Characteristics (Tj = 125°C)
7
160
Time
Main Voltage
Typical Example
Tj = 150°C
5
(dv/dt)c
V
D
140
120
100
80
III Quadrant
Main Current
3
2
(di/dt)c
Time
I
T
τ
III Quadrant
101
I Quadrant
7
5
Minimum
Characteristics
Value
60
I Quadrant
3
2
Typical Example
Tj = 125°C, I = 4 A
τ = 500 µs, V = 200 V
40
T
20
D
100
7
f = 3 Hz
0
101
2
3
5 7102
2
3
5 7103
2
3
5 7104
100
2
3
5 7 101
2
3
5 7 102
Rate of Rise of Off-State Voltage (V/µs)
Rate of Decay of On-State
Commutating Current (A/ms)
REJ03G1562-0100 Rev.1.00 Jul 06, 2007
Page 5 of 7
BCR16PM-12LD
Gate Trigger Current vs.
Gate Current Pulse Width
Commutation Characteristics (Tj = 150°C
)
7
5
103
7
Time
Typical Example
Tj = 150°C
Main Voltage
(dv/dt)c
Main Current
Typical Example
I
RGT III
V
D
5
I = 4 A
T
τ = 500 µs
I
RGT I
3
2
(di/dt)c
Time
I
T
τ
3
2
I
FGT I
V
= 200 V
D
f = 3 Hz
101
III Quadrant
7
5
102
7
I Quadrant
5
3
2
3
2
100
7
101
100
2
3
5 7 101
2
3
5 7 102
100
2
3
5 7 101
2
3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6 Ω
6 Ω
A
A
6 V
6 V
330 Ω
330 Ω
V
V
Test Procedure I
6 Ω
Test Procedure II
A
6 V
330 Ω
V
Test Procedure III
REJ03G1562-0100 Rev.1.00 Jul 06, 2007
Page 6 of 7
BCR16PM-12LD
Package Dimensions
Package Name
TO-220F
JEITA Package Code
SC-67
RENESAS Code
PRSS0003AA-A
Previous Code
MASS[Typ.]
2.0g
Unit: mm
10.5Max
5.2
2.8
φ3.2 0.2
1.3Max
0.8
2.54
2.54
0.5
2.6
Order Code
Standard order
code example
Lead form
Standard packing
Quantity
Standard order code
Straight type
Lead form
Vinyl sack
Plastic Magazine (Tube)
100 Type name
50 Type name – Lead forming code
BCR16PM-12LD
BCR16PM-12LD -A8
Note : Please confirm the specification about the shipping in detail.
REJ03G1562-0100 Rev.1.00 Jul 06, 2007
Page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology (Shanghai) Co., Ltd.
Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120
Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
Renesas Technology Korea Co., Ltd.
Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea
Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145
Renesas Technology Malaysia Sdn. Bhd
Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia
Tel: <603> 7955-9390, Fax: <603> 7955-9510
© 2007. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .7.0
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