BIC702C [RENESAS]
Bias Controlled Monolithic IC VHF/UHF RF Amplifier; 偏置控制单片集成电路VHF / UHF射频放大器
| 型号： | BIC702C |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Bias Controlled Monolithic IC VHF/UHF RF Amplifier |
| 文件： | 总13页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank yyour understanding. Except for our corporate trademark, logo and
corporate statement, no tsoever have been made to the contents of the document, and
these changes do ntion to the contents of the document itself.
RePage: http://www.renesas.com
Renesas Technology Corp.
ustomer Support Dept.
1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intelleal property rights, or any other rights, belonging to Renesas Technology
Corporation or a third
2. Renesas Technoloassumes no responsibility for any damage, or infringement of any
third-party's riguse of any product data, diagrams, charts, programs, algorithms, or
circuit applin these materials.
3. All informats, including product data, diagrams, charts, programs and
algorithms reprat the time of publication of these materials, and are
subject to change ation without notice due to product improvements or
other reasons. It is stomers contact Renesas Technology Corporation
or an authorized Renesauct distributor for the latest product information
before purchasing a produc
The information described herracies or typographical errors.
Renesas Technology Corporation any damage, liability, or other loss
rising from these inaccuracies or err
Please also pay attention to information logy Corporation by various
means, including the Renesas Technology me page
(http://www.renesas.com).
4. When using any or all of the information containproduct data, diagrams,
charts, programs, and algorithms, please be sure to al system before
making a final decision on the applicability of the infos Technology
Corporation assumes no responsibility for any damage, liom the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designor use in a device
or system that is used under circumstances in which human life is pke. Please contact
Renesas Technology Corporation or an authorized Renesas Technologation product distributor
when considering the use of a product contained herein for any specific poses, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
BIC702C
Bias Controlled Monolithic IC
VHF/UHF RF Amplifier
ADE-208-814D (Z)
5th. Edition
Mar. 2001
Features
•
•
•
•
•
Bias Controlled xternal DC biasing voltage on gate1.);
To reduce upace.
High |yfs| ;
|yfs| = 29 mS typ
Low noise;
NF = 1.0 dB typ. (at f = t f = 900 MHz)
Withstanding to ESD;
Build in ESD absorbing diode. 0pF, Rs = 0 conditions.
Provide mini mold package; CMPA
Outline
CMPAK-4
2
3
1
4
1. Sourc
2. Gate1
3. Gate2
4. Drain
Notes:
1. Marking is “BZ–”.
2. BIC702C is individual type number of HITACHI BICMIC.
BIC702C
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VDS
Ratings
Unit
V
Drain to source voltage
Gate1 to source voltage
6
VG1S
+6
–0
V
Gate2 to source voltage
VG2S
+6
–0
V
Drain current
ID
30
mA
mW
°C
Channel power dissipation
Channel temperature
Storage temperature
Pch
Tch
Tstg
100
150
–55 to +150
°C
Electrical CC)
Item
Typ
Max
Unit
Test Conditions
Drain to source breakd
voltage
—
—
V
V
V
ID = 200µA
V
G2S = 0,VG1 = open
Gate1 to source breakdown
voltage
IG1 =+10µA, VG2S = VDS = 0
IG2 = +10µA, VG1S = VDS = 0
VG2S = +5V, VG1S = VDS = 0
Gate2 to source breakdown V(BR)G2S
voltage
Gate2 to source cutoff current IG2SS
Gate2 to source cutoff voltage VG2S(off)
—
0.5
VDS = 5V, ID = 100µA
1 = open
Drain current
ID(op)
10
24
1
29
5V , VG2S = 4V
en
Forward transfer admittance |yfs|
= 13mA
1kHz
Input capacitance
Output capacitance
ciss
1.6
0.7
—
2.0
2.3
1.5
0.05
—
pF
dB
, VG2S =4V
open
coss
1.1
Reverse transfer capacitance crss
0.02
28.5
= 1MHz
Power gain
PG1
24
VDS = 5V, VG2S =4V
VG1 = open
Noise figure
Power gain
NF1
PG2
—
1.0
23
1.5
—
dB
dB
f = 200MHz
18
VDS = 5V, VG2S =4V
VG1 = open
Noise figure
NF2
—
1.6
2.2
dB
f = 900MHz
BIC702C
Test Circuits
• DC Biasing Circuit for Operating Characteristic Items (ID(op), |yfs|, Ciss, Coss, Crss, NF, PG)
V
G1
V
G2
Open
Gate 1
Source
Gate 2
Drain
• 200 MHz Power Gain
V
V
T
T
1000p
1000p
47k
47k
1000p
1SV70
Output(50Ω)
47k
L1
p
Input(50Ω)
10p max
1000p
1000p
0
36p
1000
Unit: : Resistance (Ω)
V
D
Capacitance (F)
L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
BIC702C
• 900 MHz Power Gain, Noise Figure Test Circuit
V
V
D
G2
C5
C4
R1
C3
R2
RFC
D
Output
G2
G1
L4
L3
Input
S
C2
X)
:
: Air
: 47 kΩ
C1, C2
C3
C4, C5
R1
: 4.7 kΩ
R2
L2:
L1:
10
26
(φ1mm Copper wire)
Unit : mm
21
29
L4:
18
L3:
RFC : φ1mm Copper wire with enamel 4turns inside dia 6mm
BIC702C
Maximum Channel Power
Dissipation Curve
Power Gain vs.
Gate2 to Source Voltage
200
150
100
50
30
25
20
15
10
5
V
V
= 5 V
= open
DS
G1
f = 200 MHz
4
3
0
0
200
1
2
)
Gate2 to Source Voltage V
(V)
G2S
Noise Figure vs
Gate2 to Source Volta
Power Gain vs.
Gate2 to Source Voltage
5
4
3
2
1
0
10
5
V
V
= 5 V
= open
DS
G1
f = 200 MHz
V
V
= 5 V
= open
DS
G1
f = 900 MHz
0
1
4
1
4
2
3
2
3
Gate2 to Source Voltage V
(V)
Gate2 to Source Voltage V
(V)
G2S
G2S
BIC702C
Power Gain vs.
Noise Figure vs.
Gate2 to Source Voltage
Drain to Source Voltage
5
4
3
2
1
30
25
20
15
10
5
V
V
= 5 V
= open
DS
G1
f = 900 MHz
V
G2S
= 4 V
V
= open
G1
f = 200 MHz
0
1
0
4
1
2
3
4
5
6
7
Gate
Drain to Source Voltage
V
(V)
DS
Noise Figure vs
Drain to Source Voltag
Power Gain vs.
Drain to Source Voltage
4
3
2
1
0
V
G2S
= 4 V
10
5
V
= open
G1
f = 200 MHz
V
G2S
= 4 V
V
= open
G1
f = 900 MHz
0
1
1
2
3
4
5
6
2
3
4
5
6
7
7
Drain to Source Voltage
V
(V)
DS
Drain to Source Voltage
V
(V)
DS
BIC702C
Gain Reduction vs.
Gate2 to Source Voltage
Noise Figure vs.
Drain to Source Voltage
4
3
2
1
0
10
20
30
40
50
V
V
V
= 5 V
= open
DS
G1
= 4 V
G2S
V
V
= 4 V
= open
G2S
G1
f = 200 MHz
f = 900 M
0
2
4
3
2
1
0
7
Drain
Gate2 to Source Voltage V
(V)
G2S
Gain Reduction v
Gate2 to Source Volta
Input Capacitance vs.
Gate2 to Source Voltage
0
10
20
30
40
50
1
V
V
V
= 5 V
= open
DS
G1
V
= 4 V
= open
DS
G1
= 4 V
G2S
f = 900 MHz
f = 1 MHz
2
4
0
3
1
0
(V)
1
2
3
4
Gate2 to Source Voltage V
Gate2 to Source Voltage V
(V)
G2S
G2S
BIC702C
S21 Parameter vs. Frequency
S11 Parameter vs. Frequency
Scale: 1 / div.
1
90°
.8
1.5
60°
.6
120°
2
.4
3
30°
4
150°
.2
5
10
.2
.4 .6 .8 1
1.5 2 3 4 5 10
0
180°
0°
-10
- 5
- 4
- .2
- 30°
- 150°
- 3
- .4
- 2
- 60°
- 120°
-
- 90°
Test C
Test Condition: V = 5 V , V
= open
G1
DS
V
G2S
= 4 V ,
Ω
Zo = 50
50 to 100
50 to 1000 MHz (50 MHz step)
S12 Parameter vs
S22 Parameter vs. Frequency
1
90°
.8
1.5
.6
120°
2
3
150°
4
5
10
.5 2 3 4 5 10
180°
0°
-10
- 5
- 4
- .2
- 30°
- 150°
- 3
- .4
- 2
- 60°
- 120°
- .6
- 1.5
-
- 90°
Test Condition: V = 5 V , V
= open
G1
Test Condition:
DS
V
V
5 V , V
= open
G1
DS
V
G2S
= 4 V ,
= 4 V ,
G2S
Ω
Zo = 50
Ω
Zo = 50
50 to 1000 MHz (50 MHz step)
50 to 1000 MHz (50 MHz step)
BIC702C
Sparameter (VDS = 5 V, VG2S = 4 V, VG1 = open, Zo = 50 Ω)
S11
S21
MAG
2.80
2.78
2.77
2.74
2.72
2.68
.64
2
2.22
2.18
2.12
2.07
2.04
S12
S22
f (MHz) MAG
ANG
-3.3
ANG
175.9
170.9
166.1
161.2
156.5
151.8
147.2
142.7
138.6
34.1
8
1
98.6
MAG
ANG
58.8
75.7
75.1
77.4
78.2
80.0
74.7
71.7
73.3
71.8
70.7
69.9
69.1
67.8
70.8
3.3
MAG
0.990
0.992
0.991
0.987
0.985
0.982
0.978
0.973
0.968
0.963
0.958
0.952
0.947
0.942
0.936
0.929
0.924
0.917
.912
ANG
50
0.998
0.993
0.991
0.984
0.978
0.970
0.958
0.954
0.945
0.932
0.920
0.910
0.900
0.887
0.870
0.863
0.853
0.839
0.827
0.819
0.00106
0.00171
0.00253
0.00356
0.00442
0.00485
0.00576
0.00642
0.00689
0.00712
0.00765
0.00804
.00798
87
-2.4
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
-7.2
-4.7
-10.9
-15.0
-19.0
-22.8
-26.
-
-47.5
-50.9
-54.4
-57.6
-60.9
-63.6
-66.5
-70.1
-7.2
-9.6
-12.2
-14.7
-17.1
-19.6
-22.0
-24.2
-26.7
-28.9
-31.3
-33.4
-35.8
-37.9
-40.3
-42.5
-44.5
-46.7
94.9
BIC702C
Package Dimensions
As of January, 2001
Unit: mm
2.0 ± 0.2
1.3 ± 0.2
0.65 0.65
+ 0.1
+ 0.1
+ 0.1
0.3
0.3
0.4
– 0.05
– 0.05
0.16
– 0.06
0 – 0.1
+ 0.1
– 0.05
tachi Code
EC
CMPAK-4(T)
—
Conforms
0.006 g
rence value)
BIC702C
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such aspace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipical equipment for life support.
4. Design your approduct is used within the ranges guaranteed by Hitachi particularly
for maximum oltage range, heat radiation characteristics, installation
conditions hi bears no responsibility for failure or damage when used
beyond the gue guaranteed ranges, consider normally foreseeable
failure rates or faivices and employ systemic measures such as fail-
safes, so that the equoduct does not cause bodily injury, fire or other
consequential damage droduct.
5. This product is not designed
6. No one is permitted to reproducwhole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any qnt or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
Asia
: http://semiconductor.hitachi.com/
: http://www.hitachi-eu.com/hel/ecg
: http://sicapac.hitachi-asia.com
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive, Dornacher Straβe 3
Hitachi Europe GmbH
Electronic Components Group
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
San Jose,CA 95134
D-85622 Feldkirchen, Munich
World Finance Centre,
Tel: <1> (408) 433-1990 Germany
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0
相关型号：
BIDIRECTIONAL
Bidirectional 3.3V I/O Transceiver for SCSI-2/SCSI-3/and SCSI-3 Fast-20 Buses data sheet 11/97
ETC
©2020 ICPDF网 联系我们和版权申明