CD4078BDMSR [RENESAS]

4000/14000/40000 SERIES, 8-INPUT OR/NOR GATE, CDIP14;
CD4078BDMSR
型号: CD4078BDMSR
厂家: RENESAS TECHNOLOGY CORP    RENESAS TECHNOLOGY CORP
描述:

4000/14000/40000 SERIES, 8-INPUT OR/NOR GATE, CDIP14

栅 CD 输入元件 逻辑集成电路 触发器
文件: 总8页 (文件大小:66K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CD4078BMS  
CMOS 8 Input NOR/OR Gate  
December 1992  
CD4078BMS  
TOP VIEW  
Features  
• High Voltage Type (20V Rating)  
Pinout  
• Medium Speed Operation  
K **  
A
1
2
3
4
5
6
7
14 VDD  
13 J *  
12 H  
- tPHL, tPLH = 75ns (Typ.) at VDD = 10V  
• Buffered Inputs and Output  
B
• 5V, 10V and 15V Parametric Ratings  
• Standardized, Symmetrical Output Characteristics  
• 100% Tested for Quiescent Current at 20V  
C
11 G  
D
10 F  
NC  
VSS  
9
8
E
• Maximum Input Current of 1µA at 18V Over Full Pack-  
age Temperature Range; 100nA at 18V and +25oC  
NC  
• Noise Margin (Over Full Package/Temperature Range)  
- 1V at VDD = 5V  
**K = A + B + C + D + E + F + G + H  
J = A + B + C + D + E + F + G + H  
*
NC = NO CONNECTION  
- 2V at VDD = 10V  
- 2.5V at VDD = 15V  
Functional Diagram  
• Meets All Requirements of JEDEC Tentative Standard  
No. 13B, “Standard Specifications for Description of  
‘B’ Series CMOS Devices”  
2
A
3
B
4
C
5
Description  
CD4078BMS NOR/OR Gate provides the system designer with  
direct implementation of the positive logic 8 input NOR and OR  
functions and supplements the existing family of CMOS gates.  
1
K
D
13  
J
9
E
10  
The CD4078BMS is supplied in these 14 lead outline packages:  
F
11  
12  
J = A + B + C + D + E + F + G + H  
K = A + B + C + D + E + F + G + H  
6, 8 = NO CONNECTION  
VDD = 14  
G
H
Braze Seal DIP  
Frit Seal DIP  
H4Q  
H1B  
Ceramic Flatpack H3W  
VSS = 7  
Logic Diagram  
A
B
2
3
C
D
E
F
4
5
13  
J
9
1
K
10  
11  
12  
G
H
FIGURE 1. LOGIC DIAGRAM  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.  
File Number 3326  
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999  
7-1038  
Specifications CD4078BMS  
Absolute Maximum Ratings  
Reliability Information  
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V  
(Voltage Referenced to VSS Terminals)  
Thermal Resistance . . . . . . . . . . . . . . . .  
Ceramic DIP and FRIT Package . . . . . 80 C/W  
Flatpack Package . . . . . . . . . . . . . . . . 70 C/W  
θ
θ
jc  
ja  
o
o
20 C/W  
o
o
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V  
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA  
20 C/W  
o
Maximum Package Power Dissipation (PD) at +125 C  
o
o
o
o
Operating Temperature Range. . . . . . . . . . . . . . . . -55 C to +125 C  
Package Types D, F, K, H  
For TA = -55 C to +100 C (Package Type D, F, K) . . . . . . 500mW  
o
o
For TA = +100 C to +125 C (Package Type D, F, K) . . . . .Derate  
o
o
o
Storage Temperature Range (TSTG) . . . . . . . . . . . -65 C to +150 C  
Linearity at 12mW/ C to 200mW  
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW  
For TA = Full Package Temperature Range (All Package Types)  
o
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265 C  
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for  
10s Maximum  
o
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C  
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS  
LIMITS  
MIN MAX UNITS  
GROUP A  
SUBGROUPS  
PARAMETER  
Supply Current  
SYMBOL  
CONDITIONS (NOTE 1)  
TEMPERATURE  
o
IDD  
VDD = 20V, VIN = VDD or GND  
1
+25 C  
-
0.5  
50  
0.5  
-
µA  
µA  
µA  
nA  
nA  
nA  
nA  
nA  
nA  
mV  
V
o
2
+125 C  
-
o
VDD = 18V, VIN = VDD or GND  
3
-55 C  
-
o
Input Leakage Current  
Input Leakage Current  
IIL  
VIN = VDD or GND  
VIN = VDD or GND  
VDD = 20  
1
+25 C  
-100  
o
2
+125 C  
-1000  
-
o
VDD = 18V  
VDD = 20  
3
-55 C  
-100  
-
o
IIH  
1
+25 C  
-
-
-
-
100  
1000  
100  
50  
-
o
2
+125 C  
o
VDD = 18V  
3
-55 C  
o
o
o
Output Voltage  
VOL15 VDD = 15V, No Load  
VOH15 VDD = 15V, No Load (Note 3)  
1, 2, 3  
+25 C, +125 C, -55 C  
o
o
o
Output Voltage  
1, 2, 3  
+25 C, +125 C, -55 C 14.95  
o
Output Current (Sink)  
Output Current (Sink)  
Output Current (Sink)  
IOL5  
IOL10  
IOL15  
VDD = 5V, VOUT = 0.4V  
VDD = 10V, VOUT = 0.5V  
VDD = 15V, VOUT = 1.5V  
1
+25 C  
0.53  
1.4  
3.5  
-
-
mA  
mA  
mA  
mA  
mA  
mA  
mA  
V
o
1
+25 C  
-
o
1
+25 C  
-
o
Output Current (Source) IOH5A VDD = 5V, VOUT = 4.6V  
Output Current (Source) IOH5B VDD = 5V, VOUT = 2.5V  
Output Current (Source) IOH10 VDD = 10V, VOUT = 9.5V  
Output Current (Source) IOH15 VDD = 15V, VOUT = 13.5V  
1
+25 C  
-0.53  
-1.8  
-1.4  
-3.5  
-0.7  
2.8  
o
1
+25 C  
-
o
1
+25 C  
-
o
1
1
+25 C  
-
o
N Threshold Voltage  
P Threshold Voltage  
Functional  
VNTH  
VPTH  
F
VDD = 10V, ISS = -10µA  
+25 C  
-2.8  
0.7  
o
VSS = 0V, IDD = 10µA  
1
+25 C  
V
o
VDD = 2.8V, VIN = VDD or GND  
VDD = 20V, VIN = VDD or GND  
VDD = 18V, VIN = VDD or GND  
VDD = 3V, VIN = VDD or GND  
VDD = 5V, VOH > 4.5V, VOL < 0.5V  
7
+25 C  
VOH > VOL <  
VDD/2 VDD/2  
V
o
7
+25 C  
o
8A  
8B  
1, 2, 3  
+125 C  
o
-55 C  
o
o
o
Input Voltage Low  
(Note 2)  
VIL  
VIH  
VIL  
VIH  
+25 C, +125 C, -55 C  
-
1.5  
V
V
V
V
o
o
o
Input Voltage High  
(Note 2)  
VDD = 5V, VOH > 4.5V, VOL < 0.5V  
1, 2, 3  
1, 2, 3  
1, 2, 3  
+25 C, +125 C, -55 C 3.5  
-
4
-
o
o
o
Input Voltage Low  
(Note 2)  
VDD = 15V, VOH > 13.5V,  
VOL < 1.5V  
+25 C, +125 C, -55 C  
-
o
o
o
Input Voltage High  
(Note 2)  
VDD = 15V, VOH > 13.5V,  
VOL < 1.5V  
+25 C, +125 C, -55 C  
11  
NOTES: 1. All voltages referenced to device GND, 100% testing being 3. Foraccuracy, voltageismeasureddifferentiallytoVDD. Limit  
implemented.  
is 0.050V max.  
2. Go/No Go test with limits applied to inputs.  
7-1039  
Specifications CD4078BMS  
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS  
LIMITS  
MIN  
GROUP A  
SUBGROUPS TEMPERATURE  
PARAMETER  
SYMBOL  
CONDITIONS (NOTES 1, 2)  
MAX  
300  
405  
200  
270  
-
UNITS  
ns  
o
Propagation Delay  
TPHL  
TPLH  
VDD = 5V, VIN = VDD or GND  
9
+25 C  
-
o
o
10, 11  
9
+125 C, -55 C  
-
ns  
o
Transition Time  
TTHL  
TTLH  
VDD = 5V, VIN = VDD or GND  
VDD = 5V, VIN = VDD or GND  
+25 C  
-
-
ns  
o
o
10, 11  
9
+125 C, -55 C  
ns  
o
Maximum Clock Input  
Frequency  
FCL  
+25 C  
3
MHz  
MHz  
o
o
10, 11  
+125 C, -55 C  
2.22  
-
NOTES:  
1. VDD = 5V, CL = 50pF, RL = 200K  
o
o
2. -55 C and +125 C limits guaranteed, 100% testing being implemented.  
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS  
LIMITS  
PARAMETER  
Supply Current  
SYMBOL  
CONDITIONS  
NOTES  
TEMPERATURE  
MIN  
MAX  
0.25  
7.5  
0.5  
15  
UNITS  
µA  
o
o
IDD  
VDD = 5V, VIN = VDD or GND  
1, 2  
-55 C, +25 C  
-
-
-
-
-
-
-
o
+125 C  
µA  
o
o
VDD = 10V, VIN = VDD or GND  
VDD = 15V, VIN = VDD or GND  
1, 2  
1, 2  
-55 C, +25 C  
µA  
o
+125 C  
µA  
o
o
-55 C, +25 C  
0.5  
30  
µA  
o
+125 C  
µA  
o
o
Output Voltage  
Output Voltage  
Output Voltage  
Output Voltage  
Output Current (Sink)  
VOL  
VOL  
VOH  
VOH  
IOL5  
VDD = 5V, No Load  
VDD = 10V, No Load  
VDD = 5V, No Load  
VDD = 10V, No Load  
VDD = 5V, VOUT = 0.4V  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
+25 C, +125 C,  
50  
mV  
o
-55 C  
o
o
+25 C, +125 C,  
-
50  
-
mV  
V
o
-55 C  
o
o
+25 C, +125 C,  
4.95  
9.95  
o
-55 C  
o
o
+25 C, +125 C,  
-
V
o
-55 C  
o
+125 C  
0.36  
-
-
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
mA  
V
o
-55 C  
0.64  
o
Output Current (Sink)  
Output Current (Sink)  
Output Current (Source)  
Output Current (Source)  
Output Current (Source)  
Output Current (Source)  
Input Voltage Low  
IOL10  
IOL15  
VDD = 10V, VOUT = 0.5V  
VDD = 15V, VOUT = 1.5V  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
1, 2  
+125 C  
0.9  
-
o
-55 C  
1.6  
-
o
+125 C  
2.4  
-
o
-55 C  
4.2  
-
o
IOH5A VDD = 5V, VOUT = 4.6V  
IOH5B VDD = 5V, VOUT = 2.5V  
+125 C  
-
-
-
-
-
-
-
-
-
-0.36  
-0.64  
-1.15  
-2.0  
-0.9  
-1.6  
-2.4  
-4.2  
3
o
-55 C  
o
+125 C  
o
-55 C  
o
IOH10  
IOH15  
VIL  
VDD = 10V, VOUT = 9.5V  
VDD =15V, VOUT = 13.5V  
VDD = 10V, VOH > 9V, VOL < 1V  
+125 C  
o
-55 C  
o
+125 C  
o
-55 C  
o
o
+25 C, +125 C,  
o
-55 C  
7-1040  
Specifications CD4078BMS  
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
LIMITS  
PARAMETER  
SYMBOL  
CONDITIONS  
NOTES  
TEMPERATURE  
MIN  
MAX  
UNITS  
o
o
Input Voltage High  
VIH  
VDD = 10V, VOH > 9V, VOL < 1V  
1, 2  
+25 C, +125 C,  
7
-
V
o
-55 C  
o
Propagation Delay  
Transition Time  
TPHL  
TPLH  
VDD = 10V  
VDD = 15V  
VDD = 10V  
VDD = 15V  
VDD = 10V  
VDD = 15V  
ut  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2  
+25 C  
-
-
150  
110  
100  
80  
-
ns  
ns  
o
+25 C  
o
TTHL  
TTLH  
+25 C  
-
ns  
o
+25 C  
-
ns  
o
Maximum Clock Input  
Frequency  
FCL  
CIN  
+25 C  
6
8.5  
-
MHz  
MHz  
pF  
o
+25 C  
-
o
Input Capacitance  
NOTES:  
+25 C  
7.5  
1. All voltages referenced to device GND.  
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized  
on initial design release and upon design changes which would affect these characteristics.  
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.  
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS  
LIMITS  
PARAMETER  
Supply Current  
SYMBOL  
IDD  
CONDITIONS  
NOTES  
1, 4  
TEMPERATURE  
MIN  
MAX  
2.5  
UNITS  
o
VDD = 20V, VIN = VDD or GND  
VDD = 10V, ISS = -10µA  
VDD = 10V, ISS = -10µA  
+25 C  
-
-2.8  
-
µA  
V
o
N Threshold Voltage  
VNTH  
VTN  
1, 4  
+25 C  
-0.2  
±1  
o
N Threshold Voltage  
Delta  
1, 4  
+25 C  
V
o
P Threshold Voltage  
VTP  
VSS = 0V, IDD = 10µA  
VSS = 0V, IDD = 10µA  
1, 4  
1, 4  
+25 C  
0.2  
-
2.8  
V
V
o
P Threshold Voltage  
Delta  
VTP  
+25 C  
±1  
o
Functional  
F
VDD = 18V, VIN = VDD or GND  
VDD = 3V, VIN = VDD or GND  
VDD = 5V  
1
+25 C  
VOH >  
VDD/2  
VOL <  
VDD/2  
V
o
Propagation Delay Time  
TPHL  
TPLH  
1, 2, 3, 4  
+25 C  
-
1.35 x  
ns  
o
+25 C  
Limit  
o
NOTES: 1. All voltages referenced to device GND.  
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.  
3. See Table 2 for +25 C limit.  
4. Read and Record  
O
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25 C  
PARAMETER  
Supply Current - SSI  
Output Current (Sink)  
Output Current (Source)  
SYMBOL  
IDD  
DELTA LIMIT  
± 0.1µA  
IOL5  
± 20% x Pre-Test Reading  
± 20% x Pre-Test Reading  
IOH5A  
TABLE 6. APPLICABLE SUBGROUPS  
MIL-STD-883  
CONFORMANCE GROUP  
METHOD  
GROUP A SUBGROUPS  
READ AND RECORD  
IDD, IOL5, IOH5A  
Initial Test (Pre Burn-In)  
100% 5004  
1, 7, 9  
7-1041  
Specifications CD4078BMS  
TABLE 6. APPLICABLE SUBGROUPS  
MIL-STD-883  
CONFORMANCE GROUP  
Interim Test 1 (Post Burn-In)  
Interim Test 2 (Post Burn-In)  
PDA (Note 1)  
METHOD  
100% 5004  
100% 5004  
100% 5004  
100% 5004  
100% 5004  
100% 5004  
Sample 5005  
Sample 5005  
Sample 5005  
Sample 5005  
GROUP A SUBGROUPS  
1, 7, 9  
READ AND RECORD  
IDD, IOL5, IOH5A  
1, 7, 9  
IDD, IOL5, IOH5A  
1, 7, 9, Deltas  
Interim Test 3 (Post Burn-In)  
PDA (Note 1)  
1, 7, 9  
IDD, IOL5, IOH5A  
1, 7, 9, Deltas  
Final Test  
2, 3, 8A, 8B, 10, 11  
1, 2, 3, 7, 8A, 8B, 9, 10, 11  
1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas  
1, 7, 9  
Group A  
Group B  
Subgroup B-5  
Subgroup B-6  
Subgroups 1, 2, 3, 9, 10, 11  
Subgroups 1, 2 3  
Group D  
1, 2, 3, 8A, 8B, 9  
NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2.  
TABLE 7. TOTAL DOSE IRRADIATION  
TEST  
READ AND RECORD  
MIL-STD-883  
METHOD  
CONFORMANCE GROUPS  
PRE-IRRAD  
POST-IRRAD  
PRE-IRRAD  
POST-IRRAD  
Group E Subgroup 2  
5005  
1, 7, 9  
Table 4  
1, 9  
Table 4  
TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS  
OSCILLATOR  
FUNCTION  
OPEN  
GROUND  
VDD  
9V ± -0.5V  
50kHz  
25kHz  
Static Burn-In 1  
Note 1  
1, 6, 8, 13  
2-5, 7, 9-12  
14  
Static Burn-In 2  
Note 1  
1, 6, 8, 13  
6, 8  
7
7
7
2-5, 9-12, 14  
14  
Dynamic Burn-  
In Note 1  
1, 13  
2-5, 9-12  
Irradiation  
Note 2  
1, 6, 8, 13  
2-5, 9-12, 14  
NOTE:  
1. Each pin except VDD and GND will have a series resistor of 10K ± 5%, VDD = 18V ± 0.5V  
2. Each pin except VDD and GND will have a series resistor of 47K ± 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures,  
VDD = 10V ± 0.5V  
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.  
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without  
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate  
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.  
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com  
1042  
CD4078BMS  
Schematic  
VDD  
DETAIL OF INVERTERS  
VDD  
p
p
p
p
p
n
INVERTERS  
n
*
*
*
*
2
3
4
5
n
n
n
VSS  
VDD  
p
p
n
p
n
p
n
13  
n
p
p
p
p
INVERTERS  
VSS  
VDD  
*
n
n
9
p
n
*
1
10  
n
*
11  
VSS  
VDD  
n
*
12  
VSS  
ALL INPUTS PROTECTED BY  
CMOS PROTECTION NETWORK  
*
VSS  
FIGURE 2. SCHEMATIC DIAGRAM  
7-1043  
CD4078BMS  
Typical Performance Characteristics  
AMBIENT TEMPERATURE (TA) = +25oC  
AMBIENT TEMPERATURE (TA) = +25oC  
15.0  
30  
25  
GATE-TO-SOURCE VOLTAGE (VGS) = 15V  
GATE-TO-SOURCE VOLTAGE (VGS) = 15V  
12.5  
10.0  
7.5  
20  
15  
10V  
10V  
5.0  
10  
5
2.5  
5V  
5V  
0
5
10  
15  
0
5
10  
15  
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)  
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)  
FIGURE 3. TYPICAL OUTPUT LOW (SINK) CURRENT  
CHARACTERISTICS  
FIGURE 4. MINIMUM OUTPUT LOW (SINK) CURRENT  
CHARACTERISTICS  
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)  
DRAIN-TO-SOURCE VOLTAGE (VDS) (V)  
-15  
-10  
-5  
0
-15  
-10  
-5  
0
0
0
AMBIENT TEMPERATURE (TA) = +25oC  
AMBIENT TEMPERATURE (TA) = +25oC  
GATE-TO-SOURCE VOLTAGE (VGS) = -5V  
-5  
GATE-TO-SOURCE VOLTAGE (VGS) = -5V  
-10  
-15  
-20  
-25  
-30  
-5  
-10V  
-10V  
-10  
-15  
-15V  
-15V  
FIGURE 5. TYPICAL OUTPUT HIGH (SOURCE) CURRENT  
CHARACTERISTICS  
FIGURE 6. MINIMUM OUTPUT HIGH (SOURCE) CURRENT  
CHARACTERISTICS  
AMBIENT TEMPERATURE (TA) = +25oC  
175  
AMBIENT TEMPERATURE (TA) = +25oC  
SUPPLY VOLTAGE (VDD) = 5V  
150  
200  
125  
SUPPLY VOLTAGE (VDD) = 5V  
150  
100  
10V  
75  
15V  
100  
10V  
15V  
50  
25  
50  
0
0
20  
40  
60  
80  
100  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
LOAD CAPACITANCE (CL) (pF)  
LOAD CAPACITANCE (CL) (pF)  
FIGURE 7. TYPICAL TRANSITION TIME AS A FUNCTION OF  
LOAD CAPACITANCE  
FIGURE 8. TYPICAL PROPAGATION DELAY TIME AS A  
FUNCTION OF LOAD CAPACITANCE  
7-1044  
CD4078BMS  
Typical Performance Characteristics (Continued)  
105  
8
6
4
AMBIENT TEMPERATURE (TA) = +25oC  
AMBIENT TEMPERATURE (TA) = +25oC  
SUPPLY VOLTAGE (VDD) = 15V  
2
SUPPLY VOLTAGE (VDD) = 15V  
104  
103  
15  
10  
5
8
6
4
2
10V  
10V  
8
6
10V  
4
5V  
2
5V  
102  
10  
8
6
4
CL = 50pF  
CL = 15pF  
2
2
4
6 8  
2
4
6 8  
102  
2
4
6 8  
2
4
6 8  
104  
103  
0
5
10  
15  
20  
25  
1
10  
INPUT FREQUENCY (fI) (kHz)  
INPUT VOLTAGE (VI) (V)  
FIGURE 9. TYPICAL PROPAGATION DELAY TIME AS A  
FUNCTION OF SUPPLY VOLTAGE  
FIGURE 10. TYPICAL DYNAMIC POWER DISSIPATION AS A  
FUNCTION OF INPUT FREQUENCY  
Chip Dimensions and Pad Layout  
Dimensions in parenthesis are in millimeters and are  
derived from the basic inch dimensions as indicated.  
Grid graduations are in mils (10-3 inch).  
METALLIZATION: Thickness: 11kÅ 14kÅ, AL.  
PASSIVATION: 10.4kÅ - 15.6kÅ, Silane  
BOND PADS: 0.004 inches X 0.004 inches MIN  
DIE THICKNESS: 0.0198 inches - 0.0218 inches  
7-1045  

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