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Thyristor
Low Power Use
REJ03G0354-0200
Rev.2.00
Mar.01.2005
Features
•
•
•
IT (AV) : 0.4 A
VDRM : 600 V
•
Glass Passivation Type
I
GT : 100 µA
Outline
PRSS0003EA-A
(Package name: TO-92)
2
1. Cathode
2. Anode
3. Gate
3
1
3
2
1
Applications
Igniter, solid state relay, strobe flasher, circuit breaker, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
12
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
VRRM
VRSM
600
720
480
600
480
V
V
V
V
V
VR (DC)
VDRM
VD (DC)
Rev.2.00, Mar.01.2005, page 1 of 7
CR04AM-12
Parameter
Symbol
IT (RMS)
IT (AV)
Ratings
0.63
Unit
A
Conditions
RMS on-state current
Average on-state current
0.4
A
Commercial frequency, sine half wave
180° conduction, Ta = 54°C
Surge on-state current
I2t for fusing
ITSM
I2t
10
A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
0.4
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
0.5
W
W
V
0.1
6
6
V
0.3
A
– 40 to +125
– 40 to +125
0.23
°C
°C
g
Tstg
—
Mass
Typical value
Notes: 1. With gate to cathode resistance RGK = 1 kΩ.
Electrical Characteristics
Parameter
Symbol
IRRM
Min.
—
Typ.
—
Max.
0.5
Unit
mA
mA
Test conditions
Repetitive peak reverse current
Repetitive peak off-state current
Tj = 125°C, VRRM applied
IDRM
—
—
0.5
Tj = 125°C, VDRM applied,
RGK = 1 kΩ
On-state voltage
VTM
VGT
VGD
IGT
—
—
0.2
1
—
—
—
—
1.5
—
1.2
0.8
V
V
Ta = 25°C, ITM = 1.2 A,
instantaneous value
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Tj = 25°C, VD = 6 V,
IT = 0.1 ANote3
—
V
Tj = 125°C, VD = 1/2 VDRM,
RGK = 1 kΩ
100Note2
3
µA
mA
°C/W
Tj = 25°C, VD = 6 V,
IT = 0.1 ANote3
IH
—
—
Tj = 25°C, VD = 12 V,
RGK = 1 kΩ
Thermal resistance
Rth (j-a)
150
Junction to ambient
Notes: 2. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
IGT (µA)
1 to 30
20 to 50
40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 1 kΩ resistance between the gate and
cathode.
3. IGT, VGT measurement circuit.
60Ω
A1
I
I
GS
GT
TUT
A3
A2
6V
DC
3V
DC
V1
R
GK
1
2
V
1kΩ
GT
Switch
Switch 1 : I
Switch 2 : V
GT
measurement
measurement
(Inner resistance of voltage meter is about 1kΩ)
GT
Rev.2.00, Mar.01.2005, page 2 of 7
CR04AM-12
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
7
10
9
8
7
6
5
4
3
2
1
0
Ta = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0
1
2
3
4
5
100
2
3 4 5 7 101
2
3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics
102
7
103
7
Typical Example
5
5
3
2
V
= 6V
P
= 0.5W
GM
FGM
3
2
101
7
102
7
5
3
2
5
3
2
V
= 0.8V
GT
(Tj = 25°C)
P
= 0.1W
G(AV)
100
7
I
= 100µA
GT
5
3
2
(Tj = 25°C)
101
7
5
3
2
I
= 0.3V
10–1
FGM
7
5
V
= 0.2V
GD
3
2
10–2
100
10–223 5710–123 57100 23 57101 23 57102 23
–40–20 0 20 40 60 80 100120140160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
1.0
103
7
5
3
2
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Distribution
Typical Example
102
7
5
3
2
101
7
5
3
2
100
–40 –20
0
20 40 60 80 100 120
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
Junction Temperature (°C)
Time (s)
Rev.2.00, Mar.01.2005, page 3 of 7
CR04AM-12
Allowable Ambient Temperature vs.
Average On-State Current
Maximum Average Power Dissipation
(Single-Phase Half Wave)
(Single-Phase Half Wave)
0.8
0.7
160
140
120
100
80
60° 120°
90°
θ = 30°
θ
180°
360°
0.6
0.5
0.4
0.3
0.2
0.1
0
Resistive,
inductive loads
Natural convection
60
θ = 30° 90°
60° 120°
180°
θ
40
360°
20
Resistive,
inductive loads
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
Maximum Average Power Dissipation
(Single-Phase Full Wave)
(Single-Phase Full Wave)
0.8
160
140
120
100
80
90°
60° 120°
180°
θ = 30°
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
θ
θ
360°
Resistive loads
Natural convection
60
40
θ
θ
360°
20
θ = 30° 60° 90° 120° 180°
Resistive loads
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Rectangular Wave)
Maximum Average Power Dissipation
(Rectangular Wave)
0.8
160
140
120
100
80
90° 180°
60° 120°270°
θ = 30°
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
θ
DC
360°
Resistive,
inductive loads
Natural convection
60
θ
40
360°
60° 120°
90° 180°
270°
20
Resistive,
inductive loads
θ = 30°
DC
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
Average On-State Current (A)
Average On-State Current (A)
Rev.2.00, Mar.01.2005, page 4 of 7
CR04AM-12
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Gate to Cathode Resistance
160
120
100
80
60
40
20
0
Typical Example
Typical Example
140
120
100
80
60
40
20
R
GK
= 1kΩ
Tj = 125°C
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
–40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
Gate to Cathode Resistance (kΩ)
Breakover Voltage vs.
Holding Current vs.
Rate of Rise of Off-State Voltage
Junction Temperature
101
160
Typical Example
Distribution
7
5
Tj = 125°C
R = 1kΩ
GK
Typical Example
(25°C) = 35µA
140
120
100
80
I
GT
3
2
100
7
5
3
2
60
10–1
7
40
5
3
2
20
R
GK
= 1kΩ
0
10–2
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
–60–40–20 0 20 40 60 80 100120140
Rate of Rise of Off-State Voltage (V/µs)
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Holding Current vs.
Gate Trigger Current
500
4.0
Typical Example
(25°C) I (1kΩ)
Tj = 25°C
I
GT
H
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
# 1 25µA
0.9mA
400
300
200
100
0
# 1
Tj = 25°C
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
100
2
3
5 7 101
2
3
5 7 102
Gate to Cathode Resistance (kΩ)
Gate Trigger Current (µA)
Rev.2.00, Mar.01.2005, page 5 of 7
CR04AM-12
Turn-On Time vs.
Gate Current
Turn-Off Time vs.
Junction Temperature
102
40
35
30
25
20
15
10
5
7
5
Typical Example
V
= 100V
V
I
= 50V, V = 50V
D R
D
L
R = 47Ω
= 2A, R
= 1kΩ
GK
T
3
2
R
= 1kΩ
GK
Ta = 25°C
Typical Example
101
7
5
3
2
Distribution
100
7
5
3
2
10–1
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Gate Current (mA)
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Gate Trigger Current vs.
Gate Current Pulse Width
104
7
160
Typical Example
5
I
(DC)
GT
140
120
100
80
3
2
# 1 10µA
# 2 65µA
# 1
103
7
5
3
2
# 2
60
102
7
5
40
3
2
20
Tj = 25°C
101
0
100
2
3 4 5 7 101
2
3 4 5 7 102
–40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
Gate Current Pulse Width (µs)
Rev.2.00, Mar.01.2005, page 6 of 7
CR04AM-12
Package Dimensions
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003EA-A
Package Name
TO-92
MASS[Typ.]
0.23g
Unit: mm
φ5.0Max
4.4
1.251.25
Circumscribed circle φ0.7
Order Code
Standard order
code example
Lead form
Standard packing
Vinyl sack
Quantity
Standard order code
Straight type
Lead form
Form A8
500 Type name
CR04AM-12
Vinyl sack
Taping
500 Type name – Lead forming code
2000 Type name – TB
CR04AM-12-A6
CR04AM-12-TB
Note : Please confirm the specification about the shipping in detail.
Rev.2.00, Mar.01.2005, page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .2.0
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