CR3KM-12-E [RENESAS]
4.7A, 600V, SCR, TO-220AB, TO-220FN, 3 PIN;![CR3KM-12-E](http://pdffile.icpdf.com/pdf2/p00219/img/icpdf/CR3KM-12-A8_1273937_icpdf.jpg)
型号: | CR3KM-12-E |
厂家: | ![]() |
描述: | 4.7A, 600V, SCR, TO-220AB, TO-220FN, 3 PIN 触发装置 可控硅整流器 |
文件: | 总10页 (文件大小:197K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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April 1010
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CR3KM-12
Thyristor
Low Power Use
REJ03G0386-0200
Rev.2.00
Mar.28.2005
Features
•
•
•
•
IT (AV) : 3 A
DRM : 600 V
GT : 100 µA
Viso : 2000 V
•
•
•
Insulated Type
Glass Passivation Type
UL Recognized : Yellow Card No. E223904
File No. E80271
V
I
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
e
de
ate
Applications
TV sets, control of household equket, and other general purpose control applications
Maximum Ratings
Voltage class
Parame
Symbol
Unit
12
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
VRRM
VRSM
600
720
480
600
480
V
V
V
V
V
VR (DC)
VDRM
VD (DC)
Rev.2.00, Mar.28.2005, page 1 of 7
CR3KM-12
Parameter
Symbol
IT (RMS)
IT (AV)
Ratings
4.7
Unit
A
Conditions
RMS on-state current
Average on-state current
3.0
A
Commercial frequency, sine half wave
180° conduction, Tc = 103°C
Surge on-state current
I2t for fusing
ITSM
I2t
70
A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
24.5
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
0.5
W
W
V
0.1
6
6
0.3
V
A
– 40 to +125
– 40 to +125
2.0
°C
°C
g
Tstg
—
Typical value
Isolation voltage
Viso
2000
V
Ta = 25°C, AC 1 minute,
eterminal to case
Notes: 1. With gate to cathode resistance RGK = 220 Ω.
Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Test conditions
Repetitive peak reverse current
IRRM
—
Tj = 125°C, VRRM applied,
RGK = 220 Ω
Repetitive peak off-state current
On-state voltage
IDRM
VTM
—
A
V
Tj = 125°C, VDRM applied,
RGK = 220 Ω
Tc = 25°C, ITM = 10 A,
instantaneous value
Gate trigger voltage
VGT
0.8
—
V
V
Tj = 25°C, VD = 6 V, IT = 0.1 A
Gate non-trigger voltage
Tj = 125°C, VD = 1/2 VDRM
RGK = 220 Ω
Gate trigger current
Thermal resistance
—
—
100Note3
4.1
µA
Tj = 25°C, VD = 6 V, IT = 0.1 A
Junction to caseNote2
°C/W
Notes: 2. The contact thse of greasing is 0.5°C/W.
3. If special valuose item D or E from those listed in the table below if possible.
Item
D
E
IGT (µA)
20 t
to 100
1 to 50
20 to 100
The above values do node the current flowing through the 220 Ω resistance between the gate and
cathode.
Rev.2.00, Mar.28.2005, page 2 of 7
CR3KM-12
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
7
100
90
80
70
60
50
40
30
20
10
0
Tc = 25°C
5
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
100
2
3 4 5 7 101
2
3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
igger Current vs.
Temperature
Gate Characteristics
102
7
5
Typical Example
I
(25°C)
GT
3
2
# 1 45µA
# 2 18µA
V
= 6V
P
= 0.5W
FGM
GM
101
7
5
3
2
P
= 0.1W
G(AV)
V
= 0.8V
GT
100
7
7
5
3
2
I
= 100µA
GT
(Tj = 25°C)
5
3
2
I
FG
10–1
7
5
100
5710–123 57100 23
–40 –20
0
20 40 60 80 100 120
Gat
Junction Temperature (°C)
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Gate T
Junction
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
102
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
7
5
3
2
Distribution
Typical Example
101
7
5
3
2
100
7
5
3
2
10–1
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
–40 –20
0
20 40 60 80 100 120
Junction Temperature (°C)
Time (s)
Rev.2.00, Mar.28.2005, page 3 of 7
CR3KM-12
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
8
160
140
120
100
80
Resistive,
inductive loads
7
6
5
4
3
2
1
0
θ
180°
360°
120°
90°
60°
θ = 30°
θ = 30°
90° 180°
60° 120°
60
θ
40
360°
20
Resistive,
inductive loads
0
0
1.0
2.0
3.0
4.0
5.0
0
1.0
2.0
3.0
4.0
5.0
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
Mrage Power Dissipation
ase Full Wave)
(Single-Phase Half Wave)
160
140
120
100
80
Resistive,
inductive loads
Natural convection
2
1
0
θ
180°
360°
120°
90°
θ = 180°
60°
120°
90°
θ = 30°
60°
30°
60
40
θ
θ
360°
Resistive loads
3.0 4.0 5.0
20
0
0
0.2 0.4 0.6
Average
0
1.0
2.0
Average On-State Current (A)
Allowab
Averag
(Single-P)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
140
120
100
80
160
140
120
100
80
Resistive loads
Natural convection
Resistive oads
θ
θ
θ
θ
360°
360°
θ = 180°
120°
90°
60°
30°
θ = 30° 60° 90° 120° 180°
60
60
40
40
20
20
0
0
0
1.0
2.0
3.0
4.0
5.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
Average On-State Current (A)
Rev.2.00, Mar.28.2005, page 4 of 7
CR3KM-12
Breakover Voltage vs.
Junction Temperature
Holding Current vs.
Junction Temperature
160
140
120
100
80
102
7
V
R
= 12V
Typical Example
= 220Ω
D
5
= 1kΩ
GK
R
GK
3
2
Distribution
Typical Example
101
7
5
3
2
60
100
7
5
40
3
2
20
0
10–1
–40–20 0 20 40 60 80 100120140160
–40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
Junction Temperature (°C)
Holding Current vs.
Gate to Cathode Resistance
Turn-On Time vs.
Gate Current
400
Typical Example
(25°C)
# 1 25µA
# 2 50µA
V
= 100V
D
I
Ta = 25°C
Typical Example
GT
350
300
250
200
150
100
50
I
(25°C)
# 33µA
GT
# 1
# 2
#
4
3
2
10–1
0
100
2
3
4 5 7 101
2
3
4 5 7 102
10–1 2 3 5 7 100 2 3
Gate to Cat
Gate Current (mA)
Repetitive Peak Reverse Voltage vs.
Junction Temperature
Jun
80
70
60
50
40
30
20
10
0
160
140
120
100
80
I
V
= 2A
T
Typical Example
= 50V, V = 50V
D
R
dv/dt = 5V/µs
60
Typical Example
Distribution
40
20
0
0
20 40 60 80 100 120 140 160
Junction Temperature (°C)
–40–20 0 20 40 60 80 100120140160
Junction Temperature (°C)
Rev.2.00, Mar.28.2005, page 5 of 7
CR3KM-12
Gate Trigger Current vs.
Gate Current Pulse Width
104
7
5
tw
Typical Example
3
2
0.1s
103
7
5
3
2
102
7
5
3
2
101
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
Gate Current Pulse Width (µs)
Rev.2.00, Mar.28.2005, page 6 of 7
CR3KM-12
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0003AB-A
Package Name
TO-220FN
MASS[Typ.]
2.0g
Unit: mm
−
2.8 ± 0.2
10 ± 0.3
φ3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
2.54 ± 0.25
Order Code
Standard order
code example
Lead form
Standard pa
Standard order code
Straight type
Lead form
Tube
Tube
0 Type name
50 Type name – Lead forming code
CR3KM-12
CR3KM-12-A8
Note : Please confirm the ping in detail.
Rev.2.00, Mar.28.2005, page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-mhiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
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Remember to give due consideration to safety when making your circuit designs, with appropriate ent of substitutive, auxiliary circuits,
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