概述
规格参数
数据手册CR5AS-12-A1 概述
Thyristor Medium Power Use 晶闸管中等功率应用 可控硅整流器
CR5AS-12-A1 规格参数
| 生命周期： | Obsolete | 零件包装代码： | TO-252 |
| 包装说明： | IN-LINE, R-PSIP-T3 | 针数： | 3 |
| Reach Compliance Code： | unknown | HTS代码： | 8541.30.00.80 |
| 风险等级： | 5.69 | Is Samacsys： | N |
| 外壳连接： | ANODE | 配置： | SINGLE |
| 最大直流栅极触发电流： | 0.1 mA | JESD-30 代码： | R-PSIP-T3 |
| 元件数量： | 1 | 端子数量： | 3 |
| 最高工作温度： | 125 °C | 最低工作温度： | -40 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | IN-LINE | 认证状态： | Not Qualified |
| 最大均方根通态电流： | 7.8 A | 断态重复峰值电压： | 600 V |
| 重复峰值反向电压： | 600 V | 表面贴装： | NO |
| 端子形式： | THROUGH-HOLE | 端子位置： | SINGLE |
| 触发设备类型： | SCR | Base Number Matches： | 1 |
CR5AS-12-A1 数据手册
通过下载CR5AS-12-A1数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载CR5AS-12
Thyristor
Medium Power Use
REJ03G0346-0200
Rev.2.00
Apr.05.2005
Features
•
•
•
IT (AV) : 5 A
VDRM : 600 V
•
•
•
Lead Mounted Type
Non-Insulated Type
Glass Passivation Type
I
GT : 100 µA
Outline
RENESAS Package code: PRSS0004ZD-D
(Package name: DPAK(L)-(3))
4
2, 4
1. Cathode
2. Anode
3. Gate
4. Anode
3
1
1
2
3
Applications
Switching mode power supply, regulator for autocycle, protective circuit for TV sets, VCRs, and printers, igniter for
autocycle, electric tool, strobe flasher, and other general purpose control applications
Maximum Ratings
Voltage class
Parameter
Symbol
Unit
12
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltageNote1
DC off-state voltageNote1
VRRM
VRSM
VR(DC)
VDRM
VD(DC)
600
720
480
600
480
V
V
V
V
V
Rev.2.00, Apr.05.2005, page 1 of 7
CR5AS-12
Parameter
Symbol
IT (RMS)
IT (AV)
Ratings
Unit
A
Conditions
RMS on-state current
7.8
5
Average on-state current
A
Commercial frequency, sine half wave
180° conduction, Tc = 88°C
Surge on-state current
I2t for fusing
ITSM
I2t
90
33
A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
0.5
W
W
V
0.1
6
6
V
0.3
A
– 40 to +125
– 40 to +125
0.26
°C
°C
g
Tstg
—
Mass
Typical value
Notes: 1. With gate to cathode resistance RGK = 220 Ω.
Electrical Characteristics
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak reverse current
IRRM
—
—
2.0
mA
Tj = 125°C, VRRM applied,
RGK = 220 Ω
Repetitive peak off-state current
On-state voltage
IDRM
VTM
—
—
—
—
2.0
1.8
mA
V
Tj = 125°C, VDRM applied,
RGK = 220 Ω
Tc = 25°C, ITM = 15 A,
instantaneous value
Gate trigger voltage
VGT
VGD
—
—
—
0.8
—
V
V
Tj = 25°C, VD = 6 V, IT = 0.1 A
Gate non-trigger voltage
0.1
Tj = 125°C, VD = 1/2 VDRM,
RGK = 220 Ω
Gate trigger current
Holding current
IGT
IH
1
—
100Note3
—
µA
Tj = 25°C, VD = 6 V, IT = 0.1 A
—
3.5
mA
Tj = 25°C, VD = 12 V,
RGK = 220 Ω
Thermal resistance
Rth (j-c)
—
—
3.0
°C/W
Junction to caseNote2
Notes: 2. The measurement point for case temperature is at anode tab.
3. If special values of IGT are required, choose item D or E from those listed in the table below if possible.
Item
A
B
C
D
E
IGT (µA)
1 to 30
20 to 50
40 to 100
1 to 50
20 to 100
The above values do not include the current flowing through the 220 Ω resistance between the gate and
cathode.
Rev.2.00, Apr.05.2005, page 2 of 7
CR5AS-12
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
102
7
5
100
90
80
70
60
50
40
30
20
10
0
Tc = 25°C
3
2
101
7
5
3
2
100
7
5
3
2
10–1
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
100
2
3 4 5 7 101
2
3 4 5 7 102
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current vs.
Junction Temperature
Gate Characteristics
102
7
5
103
7
5
Typical Example
(25°C)
I
GT
#1
3
2
3
2
#2
# 1 11µA
# 2 61µA
V
FGM = 6V
P
GM = 0.5W
101
7
5
102
7
5
3
2
P
G(AV) = 0.1W
3
2
V
GT = 0.8V
100
7
5
101
7
5
IGT = 100µA
(Tj = 25°C)
IFGM = 0.3A
3
2
3
2
V
= 6V
R = 60Ω
D
–1
L
7
5
VGD = 0.1V
100
10-2 23 5710-123 5710023 5710123 57102 23
–60–40–20 0 20 40 60 80 100120 140
Junction Temperature (°C)
Gate Current (mA)
Maximum Transient Thermal
Impedance Characteristics
(Junction to case, Junction to ambient)
Gate Trigger Voltage vs.
Junction Temperature
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
103
1.0
7
5
Tj = 25°C
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
3
2
Distribution
Typical Example
Junction to ambient
102
7
5
3
2
101
7
5
3
2
0.1
0
Junction to case
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100
100
–60–40–20 0 20 40 60 80 100120 140
Junction Temperature (°C)
Time (s)
Rev.2.00, Apr.05.2005, page 3 of 7
CR5AS-12
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
16
160
140
120
100
80
180°
14
12
10
8
θ
120°
90°
360°
Resistive,
inductive loads
60°
6
60
θ = 30°
θ
4
40
360°
Resistive,
inductive loads
θ = 30°
90°
120°
180°
2
20
60°
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
Average On-State Current (A)
Average On-State Current (A)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
160
140
120
100
80
160
140
120
100
80
θ
θ
360°
360°
Resistive,
inductive loads
Natural convection
Resistive,
inductive loads
Natural convection
60
60
θ = 30°
60°
90°
120°
180°
θ = 30°
60°
90°
120°
180°
Aluminum Board
×
40
40
80
80×t2.3
20
20
0
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
0
1
2
3
4
5
6
7
8
Average On-State Current (A)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
16
160
140
120
100
80
Resistive loads
14
12
10
8
θ
θ
θ
θ
180°
360°
360°
120°
90°
60°
Resistive
loads
θ = 30°
6
60
4
40
θ = 30° 60° 90° 120°180°
2
20
0
0
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
Average On-State Current (A)
Average On-State Current (A)
Rev.2.00, Apr.05.2005, page 4 of 7
CR5AS-12
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
Allowable Ambient Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
160
140
120
100
80
160
140
120
100
80
Aluminum Board
×
80
80×t2.3
θ
θ
θ
θ
360°
360°
Resistive loads
Natural convection
Resistive loads
Natural convection
θ = 30°
60°
90°
60
60
θ = 30°
60°
90°
120°
180°
120°
180°
40
40
20
20
0
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Average On-State Current (A)
0
1
2
3
4
5
6
7
8
Average On-State Current (A)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Gate to Cathode Resistance
103
7
5
160
140
120
100
80
Typical Example
Typical Example
Tj = 125°C
R
= 220Ω
GK
3
2
102
7
5
3
2
60
101
7
5
40
3
2
20
100
0
–40–20 0 20 40 60 80 100120140160
10-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101
Junction Temperature (°C)
Gate to Cathode Resistance (kΩ)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
Holding Current vs.
Junction Temperature
160
102
7
5
4
Tj = 125°C
= 220Ω
R
140
120
100
80
GK
Distribution
Typical Example
3
2
101
7
5
4
3
2
60
100
7
5
4
40
3
V
D
= 12V
20
2
R
= 220Ω
GK
10–1
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
–60–40–20 0 20 40 60 80 100120140
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Rev.2.00, Apr.05.2005, page 5 of 7
CR5AS-12
Holding Current vs.
Gate to Cathode Resistance
Repetitive Peak Reverse Voltage vs.
Junction Temperature
400
350
300
160
140
120
100
80
Typical Example
Tj = 25°C
Typical Example
I
(25°C) I (1kΩ)
GT
H
# 1
# 2
14µA
48µA
1.7mA
2.7mA
250
200
150
100
50
# 1
# 2
60
40
20
0
–40–20 0 20 40 60 80 100120140160
0
10-2 2 3 5 710-1 2 3 5 7100 2 3 5 7101
Gate to Cathode Resistance (kΩ)
Junction Temperature (°C)
Gate Trigger Current vs.
Gate Current Pulse Width
104
7
5
Typical Example
(DC)
I
GT
# 1
# 1 11µA
# 2 61µA
3
2
# 2
103
7
5
3
2
102
7
5
V
= 6V
= 60Ω
D
3
2
R
Ta = 25°C
L
101
100
2
3 4 5 7 101
2
3 4 5 7 102
Gate Current Pulse Width (µs)
Rev.2.00, Apr.05.2005, page 6 of 7
CR5AS-12
Package Dimensions
JEITA Package Code
RENESAS Code
Package Name
MASS[Typ.]
0.36g
Unit: mm
PRSS0004ZD-D
DPAK(L)-(3)/DPAK(L)-(3)V
6.5 0.5
5.4 0.5
2.3 0.2
0.55 0.1
1.15 0.1
1.2 0.3
0.8 0.1
0.6 0.1
0.6 0.1
0.55 0.1
0.55 0.1
0.55 0.1
2.29
2.29
Order Code
Standard order
code example
Lead form
Standard packing
Vinyl sack
Quantity
Standard order code
Straight type
100 Type name – A1
CR5AS-12-A1
Note : Please confirm the specification about the shipping in detail.
Rev.2.00, Apr.05.2005, page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Keep safety first in your circuit designs!
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits,
(ii) use of nonflammable material or (iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's
application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party.
2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data,
diagrams, charts, programs, algorithms, or circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of
publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is
therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product
information before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor
home page (http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to
evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes
no responsibility for any damage, liability or other loss resulting from the information contained herein.
5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life
is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a
product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater
use.
6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and
cannot be imported into a country other than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited.
8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
http://www.renesas.com
Refer to "http://www.renesas.com/en/network" for the latest and detailed information.
Renesas Technology America, Inc.
450 Holger Way, San Jose, CA 95134-1368, U.S.A
Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501
Renesas Technology Europe Limited
Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K.
Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900
Renesas Technology Hong Kong Ltd.
7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong
Tel: <852> 2265-6688, Fax: <852> 2730-6071
Renesas Technology Taiwan Co., Ltd.
10th Floor, No.99, Fushing North Road, Taipei, Taiwan
Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999
Renesas Technology (Shanghai) Co., Ltd.
Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China
Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952
Renesas Technology Singapore Pte. Ltd.
1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632
Tel: <65> 6213-0200, Fax: <65> 6278-8001
© 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .2.0
CR5AS-12-A1 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| CR5AS-12-AB-A1 | RENESAS | 7.8A, 600V, SCR, DPAK-3 | 获取价格 |
|
| CR5AS-12-BC-A1 | RENESAS | 7.8A, 600V, SCR, DPAK-3 | 获取价格 |
|
| CR5AS-12-T13 | RENESAS | Thyristor Medium Power Use | 获取价格 |
|
| CR5AS-12A | RENESAS | 600V - 5A - Thyristor Medium Power Use | 获取价格 |
|
| CR5AS-12A#C05 | RENESAS | SCR | 获取价格 |
|
| CR5AS-12A-A1B00 | RENESAS | 600V - 5A - Thyristor Medium Power Use | 获取价格 |
|
| CR5AS-12A-BA1B00 | RENESAS | 600V - 5A - Thyristor Medium Power Use | 获取价格 |
|
| CR5AS-12A-EA1B00 | RENESAS | 600V - 5A - Thyristor Medium Power Use | 获取价格 |
|
| CR5AS-12A-T13B01 | RENESAS | 600V - 5A - Thyristor Medium Power Use | 获取价格 |
|
| CR5AS-12A-T13C04 | RENESAS | 600V - 5A - Thyristor Medium Power Use | 获取价格 |
|
CR5AS-12-A1 相关文章
Bourns 密封通孔金属陶瓷微调电位计产品选型手册(英文版)
- 2024-09-20
- 6
Bourns 精密环境传感器产品选型手册(英文版)
- 2024-09-20
- 9
Bourns POWrTher 负温度系数(NTC)热敏电阻手册 (英文版)
- 2024-09-20
- 8
Bourns GMOV 混合过压保护组件产品选型手册(英文版)
- 2024-09-20
- 6
