CR6CM [RENESAS]
MITSUBISHI SEMICONDUCTOR THYRISTOR; 三菱半导体晶闸管
| 型号： | CR6CM |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | MITSUBISHI SEMICONDUCTOR THYRISTOR |
| 文件： | 总6页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR6CM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
Dimensions
CR6CM
OUTLINE DRAWING
in mm
10.5 MAX
4.5
1.3
4
TYPE
NAME
φ3.6±0.2
VOLTAGE
CLASS
1.0
0.8
2.5
2.5
0.5
2.6
1 2 3
Measurement point of
case temperature
2 4
1
CATHODE
ANODE
GATE
1
2
3
4
3
• IT (AV) ...........................................................................6A
• VDRM ..............................................................400V/600V
• IGT ..........................................................................10mA
ANODE
TO-220
APPLICATION
Switching mode power supply, ECR, regulator for autocycle, motor control
MAXIMUM RATINGS
Voltage class
Symbol
Parameter
Unit
8
12
VRRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
400
500
320
400
320
600
720
480
600
480
V
V
V
V
V
VRSM
VR (DC)
VDRM
Repetitive peak off-state voltage
DC off-state voltage
VD (DC)
Symbol
Parameter
RMS on-state current
Average on-state current
Surge on-state current
Conditions
Ratings
Unit
A
IT (RMS)
IT (AV)
ITSM
9.4
6
Commercial frequency, sine half wave, 180° conduction, Tc=88°C
A
60Hz sine half wave 1 full cycle, peak value, non-repetitive
90
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
2
2
2
I t
I t for fusing
34
A s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
5
0.5
6
W
W
V
10
2
V
A
–40 ~ +125
–40 ~ +125
2.0
°C
°C
g
Tstg
Storage temperature
—
Weight
Typical value
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR6CM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Limits
Symbol
Parameter
Test conditions
Unit
Min.
—
Typ.
—
Max.
2.0
2.0
1.7
1.0
—
mA
mA
V
IRRM
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Tj=125°C, VRRM applied
Tj=125°C, VDRM applied
Tc=25°C, ITM=20A, instantaneous value
Tj=25°C, VD=6V, IT=1A
Tj=125°C, VD=1/2VDRM
Tj=25°C, VD=6V, IT=1A
Tj=25°C, VD=12V
IDRM
VTM
VGT
VGD
IGT
—
—
—
—
—
—
V
Gate trigger voltage
0.2
—
—
Gate non-trigger voltage
Gate trigger current
V
—
10
mA
mA
°C/W
—
15
—
—
IH
Holding current
✽1
—
3.0
Rth (j-c)
Thermal resistance
Junction to case
✽1. The contact thermal resistance Rth (c-f) is 1.0°C/W with greased.
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS
RATED SURGE ON-STATE CURRENT
103
200
180
160
140
120
100
80
7
5
Tc = 125°C
3
2
102
7
5
3
2
101
7
5
3
2
60
40
20
100
0
0
1
2
3
4
5
100
2
3 4 5 7 101
2
3 4 5 7 102
ON-STATE VOLTAGE (V)
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR6CM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
103
GATE CHARACTERISTICS
102
7
5
TYPICAL EXAMPLE
7
5
3
2
3
2
V
FGM = 6V
P
GM = 5W
101
7
5
3
2
102
7
5
3
2
P
G(AV)
= 0.5W
V
GT = 1V
100
7
5
101
7
5
I
GT = 10mA
3
2
3
2
V
GD = 0.2V
IFGM = 2A
10–1
100
5 7 101 2 3 5 7 102 2 3 5 7 103 2 3
5
–40–20 0 20 40 60 80 100120140160
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
102
7
5
DISTRIBUTION
3
2
TYPICAL
EXAMPLE
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
–40 –20
0
20 40 60 80 100 120
10–32 3 5710–22 3 5710–12 3 571002 3 57101
JUNCTION TEMPERATURE (°C)
TIME (s)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
16
160
θ = 30°
180°
120°
90°
14
12
10
8
140
120
100
80
θ
360°
60°
RESISTIVE,
INDUCTIVE
LOADS
6
60
θ
360°
4
40
RESISTIVE,
INDUCTIVE
LOADS
θ = 30° 60° 90° 120° 180°
2
20
0
0
0
2
4
6
8
10 12 14 16
0
1
2
3
4
5
6
7
8
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR6CM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
16
θ = 30°
14
140
θ
θ
180°
120°
360°
12
120
100
80
60
40
20
0
90°
60°
RESISTIVE LOADS
10
8
6
θ = 30°
90° 180°
60° 120°
4
θ
θ
360°
RESISTIVE LOADS
10 12 14 16
2
0
0
2
4
6
8
0
2
4
6
8
10 12 14 16
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
16
θ = 30°
DC
14
12
10
8
140
60°
270°
180°
120°
90°
θ
360°
120
100
80
60
40
20
0
RESISTIVE,
INDUCTIVE
LOADS
6
θ
θ = 30° 90° 180°
DC
360°
4
60° 120° 270°
RESISTIVE,
INDUCTIVE
LOADS
2
0
0
2
4
6
8
10 12 14 16
0
2
4
6
8
10 12 14 16
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
160
140
120
100
80
160
140
120
100
80
TYPICAL EXAMPLE
Tj = 125°C
TYPICAL
EXAMPLE
I
GT (25°C)
# 1 4.7mA
# 2 7.2mA
# 2
60
60
40
40
# 1
20
20
0
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
–40–20 0 20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR6CM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT VS.
GATE TRIGGER CURRENT
50
103
7
45
40
35
30
25
20
15
10
5
5
3
2
102
7
5
3
2
DISTRIBUTION
TYPICAL EXAMPLE
101
7
5
3
2
100
0
–40–20 0 20 40 60 80 100120140160
0
2
4
6
8 10 12 14 16 18 20
JUNCTION TEMPERATURE (°C)
GATE TRIGGER CURRENT (mA)
TURN-OFF TIME VS.
TURN-ON TIME VS. GATE CURRENT
JUNCTION TEMPERATURE
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
80
70
60
50
40
30
20
10
0
V
R
D
= 100V
TYPICAL
EXAMPLE
L = 16Ω
T
a
= 25°C
TYPICAL
EXAMPLE
I
GT (25°C)
# 5.2mA
#
DISTRIBUTION
IT = 6A, –di/dt = 5A/µs,
VD
= 300V, dv/dt = 20V/µs
= 50V
VR
0
10 20 30 40 50 60 70 80 90 100
GATE CURRENT (mA)
0
20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
160
104
7
tw
TYPICAL EXAMPLE
TYPICAL EXAMPLE
5
140
120
100
80
3
2
0.1s
103
7
5
3
2
60
102
7
5
40
3
2
20
0
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE CURRENT PULSE WIDTH (µs)
–40–20 0 20 40 60 80 100120140160
JUNCTION TEMPERATURE (°C)
Feb.1999
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