EL7532IL [RENESAS]
2.4A SWITCHING REGULATOR, 1650kHz SWITCHING FREQ-MAX, PDSO10, 3 X 3 MM, 1 MM HEIGHT, MO-229, DFN-10;
| 型号： | EL7532IL |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 2.4A SWITCHING REGULATOR, 1650kHz SWITCHING FREQ-MAX, PDSO10, 3 X 3 MM, 1 MM HEIGHT, MO-229, DFN-10 开关 光电二极管 |
| 文件： | 总9页 (文件大小：656K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EL7532
®
Data Sheet
April 26, 2004
FN7435
PRELIMINARY
Monolithic 2A Step-Down Regulator
Features
2
2
The EL7532 is a synchronous,
integrated FET 2A step-down
• Less than 0.15 in (0.97 cm ) footprint for the complete 2A
converter
regulator with internal compensation.
• Components on one side of PCB
It operates with an input voltage range from 2.5V to 5.5V,
which accommodates supplies of 3.3V, 5V, or a Li-Ion
battery source. The output can be externally set from 0.8V to
• Max height 1.1mm MSOP10 or 1mm DFN 10 package
• 100ms Power-On-Reset output (POR)
• Internally-compensated voltage mode controller
• Up to 94% efficiency
V
with a resistive divider.
IN
The EL7532 features PWM mode control. The operating
frequency is typically 1.5MHz. Additional features include a
100ms Power-On-Reset output, <1µA shut-down current,
short-circuit protection, and over-temperature protection.
• <1µA shut-down current
• Over-current and over-temperature protection
The EL7532 is available in the 10-pin MSOP and 10-pin
DFN (3x3 mm) packages, making the entire converter
Applications
• PDA and pocket PC computers
2
occupy less than 0.15 in of PCB area with components on
one side only. Both packages are specified for operation
over the full -40°C to +85°C temperature range.
• Bar code readers
• Cellular phones
Ordering Information
• Portable test equipment
• Li-Ion battery powered devices
• Small form factor (SFP) modules
PART
NUMBER
PACKAGE
10-Pin MSOP
10-Pin MSOP
10-Pin MSOP
10-Pin DFN
10-Pin DFN
10-Pin DFN
TAPE & REEL PKG. DWG. #
EL7532IY
-
MDP0043
MDP0043
MDP0043
MDP0047
MDP0047
MDP0047
EL7532IY-T7
EL7532IY-T13
EL7532IL
7”
Pinout and Typical Application Diagram
13”
-
EL7532
TOP VIEW
EL7532IL-T7
EL7532IL-T13
7”
13”
R *
1
100kΩ
1
2
3
4
5
SGND
PGND
LX
FB 10
R *
2
124kΩ
VO
POR
EN
9
8
7
6
C
10µF
C
2
10µF
1
L
1
POR
EN
1.8µH
V
V
(1.8V@ 2A)
O
VIN
R
100Ω
3
(2.5V-6V)
IN
VDD
RSI
RSI
R
C
3
0.1µF
6
100kΩ
R
R
100kΩ
100kΩ
4
5
* V = 0.8V * (1 + R / R )
O
2
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1
1-888-INTERSIL or 321-724-7143 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2004. All Rights Reserved. Elantec is a registered trademark of Elantec Semiconductor, Inc.
All other trademarks mentioned are the property of their respective owners.
EL7532
Absolute Maximum Ratings (T = 25°C)
A
V
, V , POR to SGND. . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +145°C
IN DD
LX to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to (V + +0.3V)
IN
IN
RSI, EN, V , FB to SGND. . . . . . . . . . . . . . . -0.3V to (V + +0.3V)
O
PGND to SGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4A
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: T = T = T
A
J
C
Electrical Specifications
V
= V = V
IN
= 3.3V, C1 = C2 = 10µF, L = 1.8µH, V = 1.8V, unless otherwise specified.
EN O
DD
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
DC CHARACTERISTICS
V
Feedback Input Voltage
790
800
810
250
5.5
2.2
2.4
500
1
mV
nA
V
FB
I
Feedback Input Current
Input Voltage
FB
V
V
V
, V
2.5
2
IN DD
IN,OFF
IN,ON
Minimum Voltage for Shutdown
Maximum Voltage for Startup
Supply Current
V
V
falling
rising
V
IN
IN
2.2
V
I
PWM, V = V
IN DD
= 5V
= 5V
400
0.1
52
µA
µA
mΩ
mΩ
A
DD
EN = 0, V = V
IN
DD
R
R
PMOS FET Resistance
NMOS FET Resistance
Current Limit
V
V
= 5V, wafer test only
= 5V, wafer test only
80
DS(ON)-PMOS
DS(ON)-NMOS
LMAX
DD
DD
35
65
I
3
T
Over-temperature Threshold
Over-temperature Hysteresis
EN, RSI Current
T rising
T falling
145
130
°C
°C
V
OT,OFF
OT,ON
T
I
, I
EN RSI
V
V
V
V
V
, V
EN RSI
= 0V and 3.3V
-1
0.8
86
1
V
V
V
, V
EN1 RSI1
EN, RSI Rising Threshold
EN, RSI Falling Threshold
= 3.3V
= 3.3V
rising
2.4
V
DD
DD
, V
V
EN2 RSI2
Minimum V for POR, WRT Targeted
FB
95
70
%
POR
FB
V
Value
FB
falling
%
FB
V
POR Voltage Drop
I
= 5mA
35
mV
OLPOR
SINK
AC CHARACTERISTICS
F
PWM Switching Frequency
Minimum RSI Pulse Width
Soft-start Time
1.35
50
1.5
25
1.65
50
MHz
ns
PWM
t
t
t
Guaranteed by design
RSI
650
100
µs
SS
Power On Reset Delay Time
150
ms
POR
2
EL7532
Pin Descriptions
PIN NUMBER
PIN NAME
PIN FUNCTION
1
2
SGND
PGND
LX
Negative supply for the controller stage
Negative supply for the power stage
3
Inductor drive pin; high current digital output with average voltage equal to the regulator output voltage
4
VIN
Positive supply for the power stage
Power supply for the controller stage
Resets POR timer
5
VDD
RSI
6
7
EN
Enable
8
POR
VO
Power on reset open drain output
Output voltage sense
9
10
FB
Voltage feedback input; connected to an external resistor divider between V and SGND for variable
O
output
Block Diagram
V
DD
O
V
+
-
10pF
V
IN
124K
100K
CURRENT
LIMIT
FB
5M
-
+
PWM
COMPEN-
SATION
+
-
PWM
COMPARATOR
P-DRIVER
LX
1.8µ
CONTROL
LOGIC
RAMP
GENERATOR
CLOCK
1.5MHz
1.8V
2A
EN
EN
SOFT-
START
10µF
10µF
N-DRIVER
UNDER-
VOLTAGE
LOCKOUT
+
–
PGND
POR
BANDGAP
REFERENCE
100K
PG
2.5V-
5V
TEMPERATURE
SENSE
SGND
RSI
POR
3
EL7532
Typical Performance Curves
100
80
100
80
60
40
20
0
60
V =1.2V
V =3.3V
O
O
V =1.2V
V =2.5V
O
O
V =1V
V =2.5V
O
O
40
20
0
V =1V
V =1.8V
O
O
V =0.8V
O
V =1.8V
O
V =0.8V
O
MAXIMUM EFFICIENCY, η=95%
MAXIMUM EFFICIENCY, η=95%
0
0.5
1
1.5
(A)
2
2.5
2.5
2.5
0
0.5
1
1.5
2
2.5
I
I
(A)
OUT
OUT
FIGURE 1. EFFICIENCY vs I
@ V =5V
IN
FIGURE 2. EFFICIENCY vs I
@ V =3.3V
IN
OUT
OUT
100
80
1
I
=2A
O
V =0.8V
0.6
0.2
-0.2
-0.6
-1
O
60
V =1V
V =1.8V
O
O
40
20
0
V =0.8V
V =1.2V
O
O
V =3.3V
O
V =2.5V
O
MAXIMUM EFFICIENCY, η=94%
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
(V)
5
5.5
6
I
(A)
V
IN
OUT
FIGURE 3. EFFICIENCY vs I
@ V =2.5V
IN
FIGURE 4. LINE REGULATION
OUT
1
1
0.6
0.2
-0.2
-0.6
-1
0.6
V =0.8V
O
0.2
-0.2
-0.6
-1
V =0.8V
O
V =3.3V
O
V =2.5V
O
0
0.5
1
1.5
2
0
0.5
1
1.5
(A)
2
2.5
I
(A)
I
OUT
OUT
FIGURE 5. LOAD REGULATION @ V =5V
IN
FIGURE 6. LOAD REGULATION @ V =3.3V
IN
4
EL7532
Typical Performance Curves
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
1
0.5
0
1.2
1
1.087W
V =0.8V
O
0.8
0.6
0.4
0.2
0
V =1.8V
O
-0.5
-1
0
0.5
1
1.5
(A)
2
2.5
0
25
50
75 85 100
125
150
I
AMBIENT TEMPERATURE (°C)
OUT
FIGURE 7. LOAD REGULATION @ V =2.5V
IN
FIGURE 8. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.7
607mW
0.6
0.5
0.4
0.3
0.2
0.1
0
0
25
50
75 85 100
125
150
AMBIENT TEMPERATURE (°C)
FIGURE 9. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
5
EL7532
Where RL is the DC resistance on the inductor and R
the PFET on-resistance, nominal 70mΩ at room temperature
with tempco of 0.2mΩ/°C.
Applications Information
Product Description
DSON1
The EL7532 is a synchronous, integrated FET 2A step-down
regulator which operates from an input of 2.5V to 6V. The
output voltage is user-adjustable with a pair of external
resistors.
As the input voltage drops gradually close or even bellow the
preset V , the converter gets into 100% duty ratio. At this
O
condition, the upper PFET needs some minimum turn-off
time if it is turned off. This off-time is related to input/output
conditions. This makes the duty ratio appears randomly and
increases the output ripple somewhat until the 100% duty
ratio is reached. Larger output capacitor could reduce the
random-looking ripple. Users need to verify if this condition
has adverse effect on overall circuit if close to 100% duty
ratio is expected.
The internally-compensated controller makes it possible to
use only two ceramic capacitors and one inductor to form a
complete, very small footprint 2A DC-DC converter.
Start-Up and Shut-Down
When the EN pin is tied to V , and V reaches
IN
IN
approximately 2.4V, the regulator begins to switch. The
output voltage is gradually increased to ensure proper soft-
start operation.
RSI/POR Function
When powering up, the open-collector Power-On-Reset
output holds low for about 100ms after V reaches the
O
When the EN pin is connected to a logic low, the EL7532 is
in the shut-down mode. All the control circuitry and both
preset voltage. When the active-HI reset signal RSI is
issued, POR goes to low immediately and holds for the
same period of time after RSI comes back to LOW. The
output voltage is unaffected. (Please refer to the timing
diagram). When the function is not used, connect RSI to
MOSFETs are off, and V
falls to zero. In this mode, the
OUT
total input current is less than 1µA.
When the EN reaches logic HI, the regulator repeats the
start-up procedure, including the soft-start function.
ground and leave open the pull-up resister R at POR pin.
4
PWM Operation
The POR output also serves as a 100ms delayed Power
Good signal when the pull-up resister R is installed. The
In the PWM mode, the P channel MOSFET and N channel
MOSFET always operate complementary. When the
PMOSFET is on and the NMOSFET off, the inductor current
increases linearly. The input energy is transferred to the
output and also stored in the inductor. When the P channel
MOSFET is off and the N channel MOSFET on, the inductor
current decreases linearly, and energy is transferred from
the inductor to the output. Hence, the average current
through the inductor is the output current. Since the inductor
and the output capacitor act as a low pass filter, the duty
4
RSI pin needs to be directly (or indirectly through a resister
R ) connected to Ground for this to function properly.
6
V
O
MIN
25ns
RSI
cycle ratio is approximately equal to V divided by V
.
100ms
100ms
O
IN
POR
The output LC filter has a second order effect. To maintain
the stability of the converter, the overall controller must be
compensated. This is done with the fixed internally
compensated error amplifier and the PWM compensator.
Because the compensations are fixed, the values of input
and output capacitors are 10µF to 22µF ceramic. The
inductor is nominally 1.8µH, though 1.5µA to 2.2µH can be
used.
FIGURE 10. RSI & POR TIMING DIAGRAM
Output Voltage Selection
Users can set the output voltage of the converter with a
resister divider, which can be chosen based on the following
formula:
100% Duty Ratio Operation
R
R
2
V
= 0.8 × 1 + ------
EL7532 utilizes CMOS power FET's as the internal
synchronous power switches. The upper switch is a PMOS
and lower switch a NMOS. This not only saves a boot
capacitor, it also allows 100% turn-on of the upper PFET
O
1
Component Selection
Because of the fixed internal compensation, the component
choice is relatively narrow. We recommend 10µF to 22µF
multi-layer ceramic capacitors with X5R or X7R rating for
both the input and output capacitors, and 1.5µH to 2.2µH
inductance for the inductor.
switch, achieving V close to V . The maximum achievable
O
IN
V
is,
O
V
= V – (R + R
) × I
DSON1 O
O
IN
L
6
EL7532
At extreme conditions (V < 3V, I > 0.7A, and junction
Layout Considerations
The layout is very important for the converter to function
properly. The following PC layout guidelines should be
followed:
IN
O
temperature higher than 75°C), input cap C is
1
recommended to be 22µF. Otherwise, if any of the above 3
conditions is not true, C can remain as low as 10µF.
1
The RMS current present at the input capacitor is decided by
the following formula:
• Separate the Power Ground ( ) and Signal Ground ( );
connect them only at one point right at the pins
V
× (V - V
)
• Place the input capacitor as close to V and PGND pins
IN
O
IN
O
-----------------------------------------------
I
=
× I
INRMS
O
V
as possible
IN
• Make the following PC traces as small as possible:
This is about half of the output current I for all the V . This
O
O
- from L pin to L
X
input capacitor must be able to handle this current.
- from C to PGND
O
The inductor peak-to-peak ripple current is given as:
• If used, connect the trace from the FB pin to R and R as
1
2
close as possible
• Maximize the copper area around the PGND pin
(V - V ) × V
O
IN
O
∆I = --------------------------------------------
IL
L × V × f
IN
S
• Place several via holes under the chip to additional ground
plane to improve heat dissipation
• L is the inductance
• f the switching frequency (nominally 1.5MHz)
S
The demo board is a good example of layout based on this
outline. Please refer to the EL7532 Application Brief.
The inductor must be able to handle I for the RMS load
O
current, and to assure that the inductor is reliable, it must
handle the 3A surge current that can occur during a current
limit condition.
Current Limit and Short-Circuit Protection
The current limit is set at about 3A for the PMOS. When a
short-circuit occurs in the load, the preset current limit
restricts the amount of current available to the output, which
causes the output voltage to drop below the preset voltage.
In the meantime, the excessive current heats up the
regulator until it reaches the thermal shut-down point.
Thermal Shut-Down
Once the junction reaches about 145°C, the regulator shuts
down. Both the P channel and the N channel MOSFETs turn
off. The output voltage will drop to zero. With the output
MOSFETs turned off, the regulator will soon cool down.
Once the junction temperature drops to about 130°C, the
regulator will restart again in the same manner as EN pin
connects to logic HI.
Thermal Performance
The EL7532 is in a fused-lead MSOP10 package. Compared
with regular MSOP10 package, the fused-lead package
provides lower thermal resistance. The θ is 100°C/W on a
JA
4-layer board and 125°C/W on 2-layer board. Maximizing the
copper area around the pins will further improve the thermal
performance.
7
EL7532
MSOP Package Outline Drawing
8
EL7532
DFN Package Outline Drawing
NOTE: The package drawing shown here may not be the latest version. To check the latest revision, please refer to the Intersil
website at <http://www.intersil.com/design/packages/index.asp>
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
9
相关型号：
EL7532IL-T13
2.4A SWITCHING REGULATOR, 1650kHz SWITCHING FREQ-MAX, PDSO10, 3 X 3 MM, 1 MM HEIGHT, MO-229, DFN-10
RENESAS
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