EL8286IY
更新时间：2024-11-08 19:11:14
品牌：RENESAS
描述：OP-AMP, 1000uV OFFSET-MAX, 0.7MHz BAND WIDTH, PDSO10, MSOP-10
概述
规格参数
数据手册EL8286IY 概述
OP-AMP, 1000uV OFFSET-MAX, 0.7MHz BAND WIDTH, PDSO10, MSOP-10 运算放大器
EL8286IY 规格参数
| 是否Rohs认证： | 不符合 | 生命周期： | Obsolete |
| 零件包装代码： | MSOP | 包装说明： | TSSOP, TSSOP10,.19,20 |
| 针数： | 10 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | HTS代码： | 8542.33.00.01 |
| 风险等级： | 5.92 | 放大器类型： | OPERATIONAL AMPLIFIER |
| 架构： | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB)： | 0.002 µA |
| 25C 时的最大偏置电流 (IIB)： | 0.002 µA | 标称共模抑制比： | 110 dB |
| 频率补偿： | YES | 最大输入失调电压： | 1000 µV |
| JESD-30 代码： | S-PDSO-G10 | JESD-609代码： | e0 |
| 长度： | 3 mm | 低-失调： | NO |
| 微功率： | YES | 负供电电压上限： | |
| 标称负供电电压 (Vsup)： | 功能数量： | 1 | |
| 端子数量： | 10 | 最高工作温度： | 85 °C |
| 最低工作温度： | -40 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装代码： | TSSOP | 封装等效代码： | TSSOP10,.19,20 |
| 封装形状： | SQUARE | 封装形式： | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| 峰值回流温度（摄氏度）： | 240 | 电源： | 5 V |
| 认证状态： | Not Qualified | 座面最大高度： | 1.1 mm |
| 最小摆率： | 0.07 V/us | 标称压摆率： | 0.13 V/us |
| 子类别： | Operational Amplifiers | 最大压摆率： | 0.075 mA |
| 供电电压上限： | 5.5 V | 标称供电电压 (Vsup)： | 5 V |
| 表面贴装： | YES | 技术： | BIPOLAR |
| 温度等级： | INDUSTRIAL | 端子面层： | TIN LEAD |
| 端子形式： | GULL WING | 端子节距： | 0.5 mm |
| 端子位置： | DUAL | 处于峰值回流温度下的最长时间： | NOT SPECIFIED |
| 标称均一增益带宽： | 700 kHz | 最小电压增益： | 200000 |
| 宽度： | 3 mm | Base Number Matches： | 1 |
EL8286IY 数据手册
通过下载EL8286IY数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。
PDF下载EL8186
®
Data Sheet
January 11, 2005
FN7455.1
PRELIMINARY
Micropower Single Supply Rail-to-Rail
Input-Output Op Amp
Features
• 55µA supply current
The EL8186 is a micropower operational amplifier optimized
for single supply operation at 5V and can operate down to
2.4V.
• 400µV typical offset voltage
• 500pA input bias current
• 700kHz gain-bandwidth product
• 0.13V/µs slew rate
The EL8186 draws minimal supply current while meeting
excellent DC-accuracy noise and output drive specifications.
Competing devices seriously degrade these parameters to
achieve micropower supply current. Offset current, voltage
and current noise, slew rate, and gain-bandwidth product are
all two to ten times better than on previous micropower op
amps.
• Single supply operation down to 2.4V
• Rail-to-rail input and output
• Output sources and sinks 26mA load current
Applications
The 1/f corner of the voltage noise spectrum is at 1kHz. This
results in low frequency noise performance which can only
be found on devices with an order of magnitude higher
supply current.
• Battery- or solar-powered systems
• 4mA to 25mA current loops
• Handheld consumer products
• Medical devices
The EL8186 can be operated from one lithium cell or two
Ni-Cd batteries. The input range includes both positive and
negative rail. The output swings to both rails.
• Thermocouple amplifiers
• Photodiode pre amps
• pH probe amplifiers
Ordering Information
TAPE &
PART NUMBER
EL8186IW-T7
PACKAGE
REEL
PKG. DWG. #
MDP0038
MDP0038
MDP0043
MDP0047
Pinouts
6-Pin SOT-23
7” (3K pcs)
EL8186
(6-PIN SOT-23)
TOP VIEW
EL8186IW-T7A
6-Pin SOT-23 7” (250 pcs)
EL8286IY (Note) 10-Pin MSOP
EL8286IL (Note) 10-Pin DFN
-
-
OUT
VS-
IN+
1
2
3
6
5
4
VS+
NOTE: Contact factory for availability
ENABLE
IN-
+
-
EL8286*
(10-PIN MSOP, DFN)
TOP VIEW
INA+
CEA
VS-
1
2
3
4
5
10 INA-
-
+
9
8
7
6
OUTA
VS+
+
-
CEB
INB+
OUTB
INB-
*COMING SOON
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-352-6832 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2004, 2005. All Rights Reserved
1
All other trademarks mentioned are the property of their respective owners.
EL8186
Absolute Maximum Ratings (T = 25°C)
A
Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V
Output Short-Circuit Duration . . . . . . . . . . . . . . . . . . . . . . .Indefinite
Ambient Operating Temperature Range . . . . . . . . . .-40°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V + 0.5V
S
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: T = T = T
A
J
C
Electrical Specifications
V
= 5V, 0V, V
= 0.1V, V = 1.4V, T = 25°C unless otherwise specified.
CM O A
S
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
0.4
MAX
UNIT
mV
V
Input Offset Voltage
1
OS
∆V
∆Time
Long Term Input Offset Voltage Stability
Input Offset Drift vs Temperature
TBD
µV/Mo
OS
------------------
∆V
1.5
µV/°C
OS
---------------
∆T
I
Input Offset Current
0.4
0.5
25
1.2
2
nA
nA
OS
B
I
Input Bias Current
e
Input Noise Voltage Density
Input Noise Current Density
Input Voltage Range
f
f
= 1KHz
nV/√Hz
pA/√Hz
V
N
O
O
i
= 1KHz
0.1
N
CMIR
CMRR
PSRR
Guaranteed by CMRR test
0
5
Common-Mode Rejection Ratio
Power Supply Rejection Ratio
Large Signal Voltage Gain
V
V
V
V
= 0V to 5V
90
110
110
500
25
dB
CM
= 2.4V to 5V
90
dB
S
A
= 0.5V to 4.5V, R = 100kΩ
200
V/mV
V/mV
mV
mV
V
VOL
O
O
L
= 0.5V to 4.5V, R = 1kΩ
L
V
Maximum Output Voltage Swing
Output low, R = 100kΩ
3
6
OUT
L
Output low, R = 1kΩ
130
4.997
4.88
0.13
700
55
200
L
Output high, R = 100kΩ
4.994
4.8
L
Output high, R = 1kΩ
V
L
SR
Slew Rate
0.07
0.16
V/µs
kHz
µA
GBW
Gain Bandwidth Product
Supply Current, Enabled
Supply Current, Disabled
Short Circuit Output Current
Short Circuit Output Current
Minimum Supply Voltage
Enable Pin High Level
Enable Pin Low Level
Enable Pin Input Current
Enable Pin Input Current
A
= 1
V
I
I
40
75
10
S,ON
3
µA
S,OFF
I +
R
R
= 10Ω
= 10Ω
18
17
31
mA
mA
V
O
L
L
I -
26
O
V
V
V
2.2
2.4
2
S
V
INH
INL
ENH
ENL
0.8
0.25
-0.5
V
I
I
V
V
= 5V
= 0V
0.7
0
2
µA
EN
EN
+0.5
µA
FN7455.1
2
January 11, 2005
EL8186
Typical Performance Curves
8
45
40
35
30
25
20
15
10
5
4
V =±1.0V
S
V =±1.25V
S
0
-4
-8
V =±2.5V
S
V =±2.5V
S
A =100
V
R =10kΩ
A =1
V
V =±1.25V
S
L
C =2.7pF
L
R =10kΩ
L
R /R =99.02
V =±1.0V
C =2.7pF
L
F
G
S
R =221kΩ
R =100Ω
F
F
G
R
=2.23kΩ
R
=OPEN
1K
G
0
100
10K
100K
1M
10M
100
1K
10K
FREQUENCY (Hz)
100K
1M
FREQUENCY (Hz)
FIGURE 1. FREQUENCY RESPONSE vs SUPPLY VOLTAGE
FIGURE 2. FREQUENCY RESPONSE vs SUPPLY VOLTAGE
60
50
40
30
20
10
0
140
120
100
80
60
40
20
0
-20
-40
-60
-80
100
80
60
40
20
0
-20
-40
-60
-80
-100
-120
2
2.5
3
3.5
4
4.5
5
5.5
1
10
100
1K
10K 100K 1M
10M
SUPPLY VOLTAGE (V)
FREQUENCY (Hz)
FIGURE 3. SUPPLY CURRENT vs SUPPLY VOLTAGE
200
FIGURE 4. OPEN LOOP GAIN + PHASE vs FREQUENCY
0
V
=V /2
CM DD
150
100
50
A =-1
V
-20
V
, µV
OS
-40
-60
V
V
=5V
DD
0
=2.5V
-50
DD
-100
-150
-200
-80
-100
0
1
2
3
4
5
0
1
2
3
4
5
OUTPUT VOLTAGE (V)
COMMON-MODE INPUT VOLTAGE (V)
FIGURE 5. INPUT OFFSET VOLTAGE vs OUTPUT VOLTAGE
FIGURE 6. INPUT OFFSET VOLTAGE vs COMMON-MODE
INPUT VOLTAGE
FN7455.1
January 11, 2005
3
EL8186
Typical Performance Curves
JEDEC JESD51-3 LOW EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
10K
0.45
0.4
391mW
0.35
0.3
1K
100
10
I +
B
0.25
0.2
I
I -
B
OS
0.15
0.1
0.05
0
1
0
1
2
3
4
5
0
25
50
75 85 100
125
150
COMMON-MODE INPUT VOLTAGE (V)
AMBIENT TEMPERATURE (°C)
FIGURE 7. INPUT BIAS + OFFSET CURRENTS vs COMMON-
MODE INPUT VOLTAGE
FIGURE 8. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
JEDEC JESD51-7 HIGH EFFECTIVE THERMAL
CONDUCTIVITY TEST BOARD
0.5
435mW
0.45
0.4
0.35
0.3
0.25
0.2
0.15
0.1
0.05
0
0
25
50
75 85 100
125
150
AMBIENT TEMPERATURE (°C)
FIGURE 9. PACKAGE POWER DISSIPATION vs AMBIENT
TEMPERATURE
FN7455.1
January 11, 2005
4
EL8186
Charge Pump
Applications Information
The EL8186 has a built-in charge pump to increase the input
range up to the positive supply rail. The charge pump
provides an internal supply voltage to bias the input stage
enabling a ground-sensing configuration to swing from
Introduction
The EL8186 is a rail-to-rail micropower operational amplifier.
The device eliminates concerns introduced by traditional rail-
to-rail I/O operation making it ideal for portable and single-
supply design.
ground to V
.
DD
The charge pump, operating at around 3MHz, is transparent
to the user. The EL8186 is adequately bypassed inside the
chip and will perform quietly. There is no need for a
dedicated external bypass capacitor, minimizing
components.
Rail-to-Rail Input Stage
The EL8186 achieves rail-to-rail input operation without
introducing errors or degrading performance. The EL8186
has a single differential-pair bipolar PNP input stage
(ground-sensing amplifier) aided by a charge pump to
increase upper common-mode range amplification up to the
positive rail. The PNP differential pair remains active
throughout the entire input common-mode voltage range
eliminating a drastic shift in offset voltage and offset current
as the common-mode approaches either rail. Since there is
no common-mode threshold crossover, unlike a
Enable/Disable Feature
The EL8186 offers an EN pin. The active low enable pin
disables the device when pulled up to at least 2.2V. Upon
disable the part consumes typically 3µA, while the output is
in a high impedance state. The EN also has an internal pull
down. If left open, the EN will pull to negative rail and the
device will be enabled by default.
conventional paralleled PNP and NPN rail-to-rail input stage
amplifier, the EL8186's offset voltage, and input offset
current exhibit an undistorted and smooth behavior over the
common-mode input range.
Rail-to-Rail Output Stage
A pair of complementary MOSFET devices achieves rail-to-
rail output swing. The NMOS sinks current to swing the
output in the negative direction. The PMOS sources current
to swing the output in the positive direction. The EL8186 with
a 100kΩ load will swing to within 3mV of the supply rails.
In general, bipolar amplifiers have higher bias currents if
intended for high-speed operation. The bipolar PNP input
bias currents of the EL8186 are decimated down to a typical
of 500pA while maintaining an excellent bandwidth for a
micropower operational amplifier. Inside the EL8186 is an
input bias cancelling circuit. The transistors are still biased
with an adequate current for speed but the cancelling circuit
sinks most of the base current, leaving a small fraction for
input bias current.
The EL8186's ground-sensing input amplifier takes
advantage of many slew-rate-enhancing techniques that
cannot be implemented to an amplifier with a dual pair rail-
to-rail input. Hence, compared to other operational amplifiers
with a dual pair rail-to-rail input with comparable supply
currents, the EL8186 slew rates are several times faster.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
FN7455.1
5
January 11, 2005
EL8286IY 相关器件
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