F1192BEVBI [RENESAS]
RF Dual Wideband Gain-Settable Downconverting Mixer;
| 型号： | F1192BEVBI |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | RF Dual Wideband Gain-Settable Downconverting Mixer |
| 文件： | 总36页 (文件大小：1606K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RF Dual Wideband Gain-Settable
Downconverting Mixer
F1192B
Datasheet
FEATURES
GENERAL DESCRIPTION
•
•
•
•
•
•
•
•
•
RF range: 400MHz to 3800MHz
LO range: 400MHz to 3600MHz
IF Range: 50MHz to 600MHz
Dual Path for MIMO
4 Gain Settings; 11dB, 8dB, 5dB, 2dB
2 bit gain step control
This document describes the specifications for the
IDTF1192B Dual Wideband, Gain-Settable, Zero-
DistortionTM Flat-NoiseTM, RF to IF Downconverting Mixer.
The F1192B has been optimized for GSM systems as
well as those utilizing LTE.
Ideal for Multi-Carrier Systems
+35dBm OIP3
The F1192B offers very low power consumption with
excellent linearity. In addition to this and the four
dynamically adjustable gain settings, the F1192B
performance is exceptional across an extremely broad
range of RF and IF frequencies. All of this makes it
ideal for myriad applications including:
Low Noise Figure at any gain setting via IDT’s
FlatNoiseTM technology
•
•
Z = 200 Ω IF balanced, 50 Ω RF, 50 Ω LO
single ended
All internally matched. Single BOM for all RF,
•
•
•
•
•
•
2G/3G/4G/5G/Multimode Remote Radio Units
High order MIMO systems, µcells, picocells, DAS
Point to Point µWave Backhaul systems
Broadband Repeaters
LO and IF frequencies
•
•
•
•
4 mm x 4 mm, 24-pin TQFN package
Independent Path Standby mode
75 nsec settling for gain adjustment
VCC = 3.3V, 835 mW, 620 mW (low power
mode)
Public Safety Infrastructure
Any radio system operating between 400 MHz and
4000 MHz
FUNCTIONAL BLOCK DIAGRAM
COMPETITIVE ADVANTAGE
F1192B offers maximum performance and flexibility at
minimum power consumption. The unique and patented
settable-gain feature allows it to be used in a very wide
variety of radiocard applications, even allowing for
dynamic adjustment of gain to maximize performance on
the fly. The extremely wide RF and IF bandwidths are
achieved with a fixed BOM with all internal matching.
The device can function with as little as -6 dBm LO
power and with independent channel shutdown modes
for ease of integration into high order TDD MIMO
systems.
BAND PERFORMANCE SUMMARY
RF Frequency (MHz)
Gain (max G11 setting)
Gain (min G2 setting)
NF @ max gain (dB)
IIP3 @ min gain (dBm)
OIP3 @ G8 (dBm)
900
11.0
2.5
8.9
28
1900
10.8
2.3
8.7
27
2600
10.3 9.0
1.8 0.5
10.0 10.9
3500
29
35
30
35
37
34
IP1dB @ min gain (dBm)
2x2 @ min gain (dBc)
Channel Isolation (dB)
Pdiss (mW)
13.6
-75
48
14.7
-82
47
14.6 15.8
-73
48
-68
45
792
835
875
935
1
Rev O August 29, 2017
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Min
Max
Units
VCC to GND
VCC
-0.5
+3.6
V
STBY_A, STBY_B, Gain_Select1,
Gain_Select2, RF_A, RF_B, LO1_ADJ,
LO2_ADJ
VCTRL
-0.5
Vcc + 0.5
V
IFOUT
LOIN
IFBIAS
IFREF
RFMAX
LOMAX
PDISS
Tj
2.4
Vcc + 0.5
+0.5
50
V
V
IF_A+, IF_A-, IF_B+, IF_B-
LO_IN
-0.5
ohms
ohms
dBm
dBm
W
IF_BiasA, IF_BiasB
500
IF_Ref_Bias
+20
RF Input Power (RF_A, RF_B) continuous
LO Input Power (LO_IN) continuous
Continuous Power Dissipation
Junction Temperature
+20
1.5
150
°C
Storage Temperature Range
Lead Temperature (soldering, 10s)
TST
-65
150
°C
TLEAD
260
°C
ElectroStatic Discharge – HBM
(JEDEC/ESDA JS-001-2012)
Class 2
(2500 V)
ElectroStatic Discharge – CDM
(JEDEC 22-C101F)
Class C3
(1000 V)
Stresses above those listed above may cause permanent damage to the device. Functional operation of the device at
these or any other conditions above those indicated in the operational section of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
PACKAGE THERMAL AND MOISTURE CHARACTERISTICS
θJA (Junction – Ambient)
45 °C/W
2.1 °C/W
MSL1
θJC (Junction – Case) [The Case is defined as the exposed paddle]
Moisture Sensitivity Rating (Per J-STD-020)
2
Rev O August 29, 2017
F1192B RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage(s)
Operating Temperature
Range
Symbol Comment
min
typ
max Units
VCC
All VCC pins
3.15
3.45
V
TCASE
Case Temperature
-40
+105
deg C
RF Freq Range
LO Freq Range
IF Range
FRF
FLO
FIF
400
400
50
3800
3600
600
MHz
dBm
LO Power
PLO
Operating Range
-6
+6
3
Rev O August 29, 2017
IDTF1192B SPECIFICATION (GENERAL)
Typical Application Circuit, VCC = +3.3V, TC = +25°C, FRF = 900MHz, FIF = 199MHz, FLO = 1100MHz, PLO = 0 dBm, PIN
= -10dBm per tone for all gain settings unless otherwise stated, STBY_A = STBY_B = LOW. EVkit IF transformer
losses are de-embedded unless otherwise noted.
Parameter
Logic Input High3
Logic Input Low3
Logic Current
Symbol Comment
min
typ
max units
VIH
For all control pins
1.11
V
VIL
For all control pins
0.65
+100
154
160
166
275
287
299
V
μA
IIH, IIL
For all control pins
-5
I1CHA_LB
I1CHA_MB
I1CHA_HB
I2CHA_LB
I2CHA_MB
I2CHA_HB
Single channel - low band LO
Single channel - mid band LO
Single channel - high band LO
Dual channel - low band LO
Dual channel - mid band LO
134
140
147
240
253
265
Supply Current
mA
Dual channel - high band LO
• Dual channel
Supply Current –
reduced linearity
• FRF = 2.2GHz, FLO = 2GHz
• OIP3 = +20dBm max gain
• IFRef_Bias resistor = 3.9Kohm
Both Channels
• Pin = -13 dBm
194
3
220
6
Shutdown current
ISD_2CHA
• Gate STBY pins per Independent
Channel Standby table
• Time for IF Signal to settle from
50% CTRL to within 90% of final
value
340
920
75
• Pin = -13 dBm
• Gate STBY pins per Independent
Channel Standby table
• Time for IF Signal to settle from
50% CTRL to within 0.1 dB of final
value
• Pin = -13 dBm
• Gate Gain Select pins per Gain
Control table
Settling Time
TSETT
nsec
• Time for IF Signal to settle from
50% Gain Select to within 90% of
final value
RFIN Impedance
ZRFIN
ZLO
Single Ended
Single Ended
Differential
50
50
LO Port Impedance
IF Output Impedance
Ω
ZIF
200
Differential 200 ohm
with 4:1 Balun
Single Ended 50 ohm
IF Return Loss
LO Return Loss
RLIF
-15
-15
dB
dB
RLLO
Note 1: Items in min/max columns in bold italics are Guaranteed by Test.
Note 2: Items in min/max columns that are not bold/italics are Guaranteed by Design Characterization.
Note 3: JEDEC 3.3V and JEDEC 1.8V logic
4
Rev O August 29, 2017
IDTF1192B SPECIFICATION (LOW BAND)
Typical Application Circuit, VCC = +3.3V, TC = +25°C, FRF = 900MHz, FIF = 199MHz, FLO = 1100MHz, PLO = 0 dBm, PIN
= -10dBm per tone for all gain settings unless otherwise stated, STBY_A = STBY_B = LOW. EVkit IF transformer
losses are de-embedded unless otherwise noted. Gain Setting = G5 (~ 5 dB gain).
Parameter
Symbol Comment
min
typ
11.1
8.3
max units
G11
G8
G5
G2
Gain setting = G11
Gain setting = G8
Gain setting = G5
Gain setting = G2
Power Gain
dB
4.05
5.4
6.75
2.5
Tcase -40C to +105C
referenced to +25C
• IF center 200MHz
• 100MHz BW
+0.7
-0.7
G5 Gain Change over temp
Gain Slope
G5TempDrift
GainSLOPE
dB
+ 0.006
dB/MHz
NFG11
NFG8
Gain setting = G11
Gain setting = G8
Gain setting = G5
Gain setting = G2
8.9
9.4
Noise Figure
dB
4, 5
NFG5
10.1
10.7
11.7
NFG2
Gain setting = G11
800 kHz tone separation
Gain setting = G8
800 kHz tone separation
Gain setting = G5
800 kHz tone separation
Gain setting = G2
800 kHz tone separation
Tcase -40C / +105C
referenced to +25C
Gain setting = G11
800 kHz tone separation
Gain setting = G8
800 kHz tone separation
Gain setting = G5
800 kHz tone separation
• Gain setting = G5
• Tc = +105°C
• LO power = -3dBm
• Vcc = 3.15V
Gain setting = G2
IIP3G11
24
29
28
28
IIP3G8
Input IP3
dBm
dB
4
IIP3G5
26
IIP3G2
IIP3G3TempDrift
OIP3G11
-2.6/
+0.6
G3 IIP3 change over temp
35
37
32
OIP3G8
Output IP3
dBm
OIP3G5
OIP3G2
33
34
30
800 kHz tone separation
5
Rev O August 29, 2017
IDTF1192B SPECIFICATION (LOW BAND) CONTINUED
Typical Application Circuit, VCC = +3.3V, TC = +25°C, FRF = 900MHz, FIF = 199MHz, FLO = 1100MHz, PLO = 0 dBm, PIN
= -10dBm per tone for all gain settings unless otherwise stated, STBY_A = STBY_B = LOW. EVkit IF transformer
losses are de-embedded unless otherwise noted. Gain Setting = G5 (~ 5 dB gain).
Parameter
Symbol Comment
min
typ
7.0
max units
IP1dBG11
Gain setting = G11
Gain setting = G8
Gain setting = G5
Gain setting = G2
IP1dBG8
9.2
Input P1dB
dBm
4
IP1dBG5
IP1dBG2
10.4
11.8
13.6
Maximum saturated
output power
Psat
2x2 6
3x3
Pin up to +20dBm
17
-75
-75
48
dBm
. PRF = -10 dBm
. FRFspur = FLO – FIF/2
. PRF = -10 dBm
. FRFspur = FLO – FIF/3
IF_B Pout versus
2RF – 2LO rejection
3RF – 3LO rejection
Channel Isolation
-73
dBc
dBc
dB
ISOC
47
IF_A w/ RF_A input
LO to IF leakage
2LO to IF leakage
3LO to IF leakage
4LO to IF leakage
ISOLI
ISOLI2
ISOLI3
ISOLI4
-38
-25
-49
-45
-35
-23
dBm
dBm
dBm
dBm
RF output power compared
to measured IF output power
RF to IF leakage
ISORI
-25
dBc
LO to RF leakage
RF Return Loss
ISOLR
RLRF
-52
-12
dBm
dB
Single Ended 50 ohm
1 – Items in min/max columns in bold italics are Guaranteed by Test
2 – All other Items in min/max columns are Guaranteed by Design Characterization
3 – JEDEC 3.3V and JEDEC 1.8V logic
4 – Specification limits over voltage and temperature
5 – Max limit at Tcase = +105C
6 – Max limit over temperature extremes
6
Rev O August 29, 2017
IDTF1192B SPECIFICATION (MID BAND)
Typical Application Circuit, VCC = +3.3V, TC = +25°C, FRF = 1900 MHz, FIF = 199MHz, FLO = 1700MHz, PLO = 0 dBm,
PIN = -10dBm per tone for all gain settings unless otherwise stated, STBY_A = STBY_B = LOW. EVkit IF transformer
losses are de-embedded unless otherwise noted. Gain Setting = G5 (~ 5 dB gain)
Parameter
Symbol Comment
min
typ
10.8
8.1
max units
G11
G8
G5
G2
Gain setting = G11
Gain setting = G8
Gain setting = G5
Gain setting = G2
Power Gain
dB
3.75
5.1
6.45
2.3
Tcase -40C to +105C
referenced to +25C
• IF center 200MHz
• 100MHz BW
+0.7
-0.6
G5 Gain Change over temp
Gain Slope
G5TempDrift
GainSLOPE
dB
+0.006
dB/MHz
NFG11
NFG8
Gain setting = G11
Gain setting = G8
Gain setting = G5
Gain setting = G2
• Gain Setting = G11
• +100MHz offset blocker
• Pin = +4dBm
8.7
9.1
Noise Figure
Blocking NF
dB
4, 5
NFG5
9.8
11.4
NFG2
10.7
NFBLK
17
dB
Gain setting = G11
800 kHz tone separation
Gain setting = G8
800 kHz tone separation
Gain setting = G5
800 kHz tone separation
Gain setting = G2
800 kHz tone separation
Tcase -40C / +105C
referenced to +25C
Gain setting = G11
800 kHz tone separation
Gain setting = G8
800 kHz tone separation
Gain setting = G5
800 kHz tone separation
• Gain setting = G5
• Tc = +105°C
• LO power = -3dBm
• Vcc = 3.15V
Gain setting = G2
IIP3G11
IIP3G8
23
25
26
27
Input IP3
dBm
dB
4
IIP3G5
25
IIP3G2
IIP3G3TempDrift
OIP3G11
-0.2/
+5
G3 IIP3 change over temp
33.6
33.6
31.0
OIP3G8
29
Output IP3
dBm
OIP3G5
OIP3G2
28.8
29.5
29.0
800 kHz tone separation
7
Rev O August 29, 2017
IDTF1192B SPECIFICATION (MID BAND) CONTINUED
Typical Application Circuit, VCC = +3.3V, TC = +25°C, FRF = 1900 MHz, FIF = 199MHz, FLO = 1700MHz, PLO = 0 dBm,
PIN = -10dBm per tone for all gain settings unless otherwise stated, STBY_A = STBY_B = LOW. EVkit IF transformer
losses are de-embedded unless otherwise noted. Gain Setting = G5 (~ 5 dB gain)
Parameter
Symbol Comment
min
typ
max units
IP1dBG11
Gain setting = G11
Gain setting = G8
Gain setting = G5
Gain setting = G2
6.0
7.7
IP1dBG8
10.1
12.7
14.7
Input P1dB
dBm
4
IP1dBG5
11.3
IP1dBG2
Maximum saturated
output power
Psat
Pin up to +20dBm
17
-82
-76
47
dBm
. PRF = -10 dBm
. FRFspur = FLO + FIF/2
. PRF = -10 dBm
. FRFspur = FLO + FIF/3
IF_B Pout versus
2RF – 2LO rejection
3RF – 3LO rejection
Channel Isolation
2x2 6
3x3
-71
dBc
dBc
dB
ISOC
40
IF_A w/ RF_A input
LO to IF leakage
2LO to IF leakage
3LO to IF leakage
4LO to IF leakage
ISOLI
ISOLI2
ISOLI3
ISOLI4
-31
-20
-59
-44
-22
-20
dBm
dBm
dBm
dBm
RF output power compared
to measured IF output power
RF to IF leakage
ISORI
-25
dBc
LO to RF leakage
RF Return Loss
ISOLR
RLRF
-46
-13
dBm
dB
Single Ended 50 ohm
1 – Items in min/max columns in bold italics are Guaranteed by Test
2 – All other Items in min/max columns are Guaranteed by Design Characterization
3 – JEDEC 3.3V and JEDEC 1.8V logic
4 – Specification limits over voltage and temperature
5 – Max limit at Tcase = +105C
6 – Max limit over temperature extremes
8
Rev O August 29, 2017
IDTF1192B SPECIFICATION (HIGH BAND)
Typical Application Circuit, VCC = +3.3V, TC = +25°C, FRF = 2600MHz, FIF = 199MHz, FLO = 2400MHz, PLO = 0 dBm, PIN
= -10dBm per tone for all gain settings unless otherwise stated, STBY_A = STBY_B = LOW. EVkit IF transformer
losses are de-embedded unless otherwise noted. Gain Setting = G5 (~ 5 dB gain)
Parameter
Symbol Comment
min
typ
10.3
7.5
max units
G11
Gain setting = G11
Gain setting = G8
Gain setting = G5
G8
3.25
2.4
4.6
5.95
dB
Power Gain
• Gain setting = G5
• FIF = 469MHz
G5
4.0
5.6
• FLO = 2130MHz
G2
Gain setting = G2
1.8
Tcase -40C to +105C
referenced to +25C
• IF center 200MHz
• 100MHz BW
• IF center 370MHz
• 200MHz BW
+0.7
-0.7
G5 Gain Change over temp
Gain Slope
G5TempDrift
dB
GainSLOPE1
GainSLOPE2
+0.006
+0.008
dB/MHz
dB/MHz
NFG11
NFG8
Gain setting = G11
Gain setting = G8
Gain setting = G5
10.0
10.4
11.1
13
Noise Figure
dB
4, 5
• Gain setting = G5
• FIF = 469MHz
NFG5
11.8
• FLO = 2130MHz
NFG2
Gain setting = G2
Gain setting = G11
800 kHz tone separation
11.9
24
IIP3G11
Gain setting = G8
800 kHz tone separation
Gain setting = G5
800 kHz tone separation
Gain setting = G2
800 kHz tone separation
Tcase -40C / +105C
referenced to +25C
IIP3G8
28
28
29
Input IP3
dBm
dB
4
IIP3G5
25
IIP3G2
-0.8/
+1.8
G3 IIP3 change over temp
IIP3G3TempDrift
9
Rev O August 29, 2017
IDTF1192B SPECIFICATION (HIGH BAND) CONTINUED
Typical Application Circuit, VCC = +3.3V, TC = +25°C, FRF = 2600MHz, FIF = 199MHz, FLO = 2400MHz, PLO = 0 dBm, PIN
= -10dBm per tone for all gain settings unless otherwise stated, STBY_A = STBY_B = LOW. EVkit IF transformer
losses are de-embedded unless otherwise noted. Gain Setting = G5 (~ 5 dB gain)
Parameter
Symbol Comment
min
typ
max units
Gain setting = G11
OIP3G11
34.7
800 kHz tone separation
Gain setting = G8
800 kHz tone separation
Gain setting = G5
OIP3G8
OIP3G5
OIP3G2
35.4
32.5
800 kHz tone separation
• Gain setting = G5
• Tc = +105°C
• LO power = -3dBm
• Vcc = 3.15V
• Gain setting = G5
• FIF = 469MHz
• FLO = 2130MHz
Output IP3
dBm
28.4
29.3
31.0
30.5
Gain setting = G2
800 kHz tone separation
IP1dBG11
IP1dBG8
Gain setting = G11
Gain setting = G8
Gain setting = G5
8.3
10.8
13.2
11.8
Input P1dB
dBm
dBm
4
• Gain setting = G5
• FIF = 469MHz
• FLO = 2130MHz
IP1dBG5
13.1
IP1dBG2
Psat
Gain setting = G2
14.6
17
Maximum saturated
output power
Pin up to +20dBm
. PRF = -10 dBm
. FRFspur = FLO + FIF/2
. PRF = -10 dBm
. FRFspur = FLO + FIF/2
IF_B Pout versus
2RF – 2LO rejection
3RF – 3LO rejection
Channel Isolation
2x2 6
3x3
-73
-76
48
-69
dBc
dBc
dB
ISOC
46
IF_A w/ RF_A input
LO to IF leakage
2LO to IF leakage
3LO to IF leakage
4LO to IF leakage
ISOLI
ISOLI2
ISOLI3
ISOLI4
-40
-44
-68
-71
-38
-30
dBm
dBm
dBm
dBm
RF output power compared
to measured IF output power
RF to IF leakage
ISORI
-32
dBc
LO to RF leakage
RF Return Loss
ISOLR
RLRF
-51
-17
dBm
dB
Single Ended 50 ohm
1 – Items in min/max columns in bold italics are Guaranteed by Test
2 – All other Items in min/max columns are Guaranteed by Design Characterization
3 – JEDEC 3.3V and JEDEC 1.8V logic
4 – Specification limits over voltage and temperature
5 – Max limit at Tcase = +105C
6 – Max limit over temperature extremes
10
Rev O August 29, 2017
SPUR MEASUREMENTS
NxM
(dBc, Gset=5 dB, LO=1700 MHz, IF=200 MHz, RFfund=0 dBm at 1900 MHz, RFspur(MHz)=(N*LO(MHz)+IF(MHz))/M )
N (LO)
1
2
3
4
5
6
7
8
9
10
1
2
0.0
37.7
69.5
73.1
88.8
>99
>99
>99
>99
>99
>99
22.0
53.7
56.0
94.4
81.1
>99
>99
>99
>99
>99
64.3
64.2
78.6
91.5
95.7
>99
>99
>99
>99
>99
39.4
50.4
60.0
97.2
94.9
>99
>99
>99
>99
>99
73.3
57.0
79.1
96.7
97.8
>99
>99
>99
>99
>99
52.4
61.3
69.2
87.7
94.9
>99
93.3
>99
>99
>99
54.3
61.8
68.0
>99
>99
>99
>99
>99
>99
71.8
83.8
94.1
>99
>99
>99
>99
>99
>99
62.1
82.2
87.1
86.6
>99
>99
>99
>99
>99
88.7
96.4
98.7
97.3
>99
>99
>99
>99
>99
3
4
5
6
7
8
9
10
NxM
(dBc, Gset=5 dB, LO=1700 MHz, IF=200 MHz, RFfund=0 dBm at 1500MHz, RFspur(MHz)=(N*LO(MHz)-IF(MHz))/M )
N (LO)
1
2
3
4
5
6
7
8
9
10
1
2
0.0
42.1
72.4
78.6
86.3
>99
>99
>99
>99
>99
>99
19.0
57.0
51.5
98.3
85.2
>99
>99
>99
>99
>99
61.0
60.0
75.9
91.1
96.9
>99
>99
>99
>99
>99
36.5
53.9
62.1
97.5
86.7
>99
>99
>99
>99
>99
77.2
57.1
75.3
>99
>99
>99
>99
>99
>99
>99
50.1
63.1
66.0
88.2
93.2
>99
89.5
>99
>99
>99
49.0
69.8
72.9
>99
>99
>99
>99
>99
>99
68.0
84.5
95.8
98.2
>99
>99
>99
>99
>99
62.5
76.2
93.2
88.6
>99
>99
>99
>99
98.2
85.7
91.4
>99
98.3
>99
>99
>99
>99
>99
3
4
5
6
7
8
9
10
11
Rev O August 29, 2017
TYPICAL OPERATING CONDITIONS (TOC)
Unless otherwise Noted, the following Apply to the Typ Ops Graphs
•
•
•
•
•
•
•
•
•
•
High Side Injection for RF frequencies below 1.2 GHz
Low Side Injection for RF frequencies from 1.3 to 2.7 GHz
199MHz IF
800KHz Tone Spacing
All measurements fully de-embedded for trace, connector, transformer losses
Pin = -10dBm for 2x2, 3x3, Gain
Pout = 0 dBm/Tone for IP3
LO level = 0 dBm, VCC = 3.30 V
Listed Temperatures are Case Temperature (TC = Case Temperature)
Where noted, TA or TAMB = Ambient Temperature
12
Rev O August 29, 2017
TOCs (-1-) Fixed IF = 199 MHz - IIP3, OIP3, and Gain
IIP3 vs. LO Power and Gain Setting
IIP3 vs. Temperature and Gain Setting
(Vcc = 3.15, Tcase = 105C)
46
46
42
38
34
30
26
22
18
42
38
34
30
26
22
18
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=11dB / 3dBm LO
G=8dB / 3dBm LO
G=5dB / 3dBm LO
G=2dB / 3dBm LO
G=11dB / 0dBm LO
G=8dB / 0dBm LO
G=5dB / 0dBm LO
G=2dB / 0dBm LO
G=11dB / -6dBm LO
G=8dB / -6dBm LO
G=5dB / -6dBm LO
G=2dB / -6dBm LO
14
10
6
14
10
6
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
OIP3 vs. LO Power and Gain Setting
OIP3 vs. Temperature and Gain Setting
(Vcc = 3.15, Tcase = 105C)
50
50
46
42
38
34
30
26
22
46
42
38
34
30
26
22
G=11dB / 3dBm LO
G=8dB / 3dBm LO
G=5dB / 3dBm LO
G=2dB / 3dBm LO
G=11dB / 0dBm LO
G=8dB / 0dBm LO
G=5dB / 0dBm LO
G=2dB / 0dBm LO
G=11dB / -6dBm LO
G=8dB / -6dBm LO
G=5dB / -6dBm LO
G=2dB / -6dBm LO
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
18
14
10
18
14
10
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
Gain vs. Temperature and Gain Setting
Gain vs. LO Power and Gain Setting
14
(Vcc = 3.15, Tcase = 105C)
12
12
10
8
10
8
6
6
4
4
2
2
0
0
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
-2
G=11dB / 3dBm LO
G=8dB / 3dBm LO
G=5dB / 3dBm LO
G=2dB / 3dBm LO
G=11dB / 0dBm LO
G=8dB / 0dBm LO
G=5dB / 0dBm LO
G=2dB / 0dBm LO
G=11dB / -6dBm LO
G=8dB / -6dBm LO
G=5dB / -6dBm LO
G=2dB / -6dBm LO
-2
-4
-6
-4
-6
-8
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
13
Rev O August 29, 2017
TOCs (-2-) Fixed IF = 199 MHz - 2x2 Rejection, 3x3 Rejection, and P1dB
2x2 Rejection vs. LO Power and Gain Setting
(Vcc = 3.15, Tcase = 105C)
2x2 Rejection vs. Temperature and Gain Setting
-20
-20
G=11dB / 3dBm LO
G=8dB / 3dBm LO
G=5dB / 3dBm LO
G=2dB / 3dBm LO
G=11dB / 0dBm LO
G=11dB / -6dBm LO
G=8dB / -6dBm LO
G=5dB / -6dBm LO
G=2dB / -6dBm LO
-30
-30
-40
-50
-60
-70
-80
-90
-100
G=8dB / 0dBm LO
G=5dB / 0dBm LO
G=2dB / 0dBm LO
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
-40
-50
-60
-70
-80
-90
-100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
3x3 Rejection vs. Temperature and Gain Setting
3x3 Rejection vs. LO Power and Gain Setting
-20
(Vcc = 3.15, Tcase = 105C)
-20
-30
G=11dB / 3dBm LO
G=8dB / 3dBm LO
G=5dB / 3dBm LO
G=2dB / 3dBm LO
G=11dB / 0dBm LO
G=8dB / 0dBm LO
G=5dB / 0dBm LO
G=2dB / 0dBm LO
G=11dB / -6dBm LO
G=8dB / -6dBm LO
G=5dB / -6dBm LO
G=2dB / -6dBm LO
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
-30
-40
-50
-60
-70
-80
-90
-100
-40
-50
-60
-70
-80
-90
-100
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
Input P1dB vs. Temperature and Gain Setting
Input P1dB vs. LO Level and Gain Setting
18
(Vcc = 3.15, Tcase = -40C)
18
16
14
12
10
8
VCC = 3.15 V
TCASE = -40C
16
14
12
10
8
6
6
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
4
2
0
4
G=11dB / 3dBm LO
G=8dB / 3dBm LO
G=5dB / 3dBm LO
G=2dB / 3dBm LO
G=11dB / 0dBm LO
G=8dB / 0dBm LO
G=5dB / 0dBm LO
G=2dB / 0dBm LO
G=11dB / -6dBm LO
G=8dB / -6dBm LO
G=5dB / -6dBm LO
G=2dB / -6dBm LO
2
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
-2
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
14
Rev O August 29, 2017
TOCs (-3-) Fixed IF = 199 MHz – Power Consumption, LO to IF Leakage, and RF to IF
Power Consumption vs. Temperature and Gain Setting
LO to IF Leakage vs. Temperature and Gain Setting
1200
0
-5
1100
1000
900
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
-10
-15
-20
-25
-30
-35
-40
-45
-50
800
700
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
600
500
400
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
Power Consumption vs. Temperature and Gain Setting
RF to IF Leakage vs. Temperature and Gain Setting
0
(Vcc = 3.15, Tcase = 105C)
1200
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
1100
1000
900
800
700
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
600
500
400
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
Power Consumption vs. Temperature and Gain Setting
(Vcc = 3.45, Tcase = -45C)
1200
VCC = 3.45 V
TCASE = - 40C
1100
1000
900
800
700
G=11dB / 3dBm LO
G=8dB / 3dBm LO
G=5dB / 3dBm LO
G=2dB / 3dBm LO
G=11dB / 0dBm LO
G=8dB / 0dBm LO
G=5dB / 0dBm LO
G=2dB / 0dBm LO
G=11dB / -6dBm LO
G=8dB / -6dBm LO
G=5dB / -6dBm LO
G=2dB / -6dBm LO
600
500
400
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
15
Rev O August 29, 2017
TOCs (-4-) Fixed IF = 199 MHz – Output IP2, Channel Isolation, Noise Figure
Output IP2 vs. Temperature and Gain Setting
Output IP2 vs. Temperature and Gain Setting
80
(Vcc = 3.15, Tcase = 105C)
80
75
70
65
60
55
50
75
70
65
60
55
50
45
45
40
35
30
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=11dB / 3dBm LO
G=8dB / 3dBm LO
G=5dB / 3dBm LO
G=2dB / 3dBm LO
G=11dB / 0dBm LO
G=11dB / -6dBm LO
G=8dB / -6dBm LO
G=5dB / -6dBm LO
G=2dB / -6dBm LO
G=8dB / 0dBm LO
G=5dB / 0dBm LO
G=2dB / 0dBm LO
40
35
30
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
Channel Isolation vs. LO Power and Gain Setting
Channel Isolation vs. Temperature and Gain Setting
60
(Vcc = 3.15, Tcase = 105C)
60
55
50
45
40
35
55
50
45
40
35
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=11dB / 3dBm LO
G=8dB / 3dBm LO
G=5dB / 3dBm LO
G=2dB / 3dBm LO
G=11dB / 0dBm LO
G=8dB / 0dBm LO
G=5dB / 0dBm LO
G=2dB / 0dBm LO
G=11dB / -6dBm LO
G=8dB / -6dBm LO
G=5dB / -6dBm LO
G=2dB / -6dBm LO
30
25
20
30
25
20
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
Noise Figure vs. Temperature and Gain Setting
Blocking Noise Figure (Max Gain, LO=1700MHz,
18
RF=1899MHz, Blocker=1999MHz, 25C ambient)
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
24
16
14
12
10
8
20
16
12
8
6
4
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
4
-20
-16
-12
-8
-4
0
4
8
Blocking Signal Level (dBm)
16
Rev O August 29, 2017
TOCs (-5-) Fixed LO = 1.1 GHz, 1.7 GHz, 2.25 GHz, 3.13 GHz – Input IP3
Input IP3 vs. Temperature and Gain Setting
Input IP3 vs. Temperature and Gain Setting
(LO=1.1 GHz)
(LO=2.25 GHz)
46
46
LO Frequency = 2.25 GHz
Low Side Injection
LO Frequency = 1.1 GHz
High Side Injection
42
42
38
34
30
26
22
18
38
34
30
26
22
18
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=11dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
14
10
6
14
10
6
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
Input IP3 vs. Temperature and Gain Setting
Input IP3 vs. Temperature and Gain Setting
(LO=1.7 Ghz)
(LO=3.13 Ghz)
46
46
LO Frequency = 3.13 GHz
LO Frequency = 1.7 GHz
Low Side Injection
Low Side Injection
42
38
34
30
26
22
18
14
10
6
42
38
34
30
26
22
18
14
10
6
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50 100 150 200 250 300 350 400 450 500 550 600 650 700
IF Frequency (MHz)
17
Rev O August 29, 2017
TOCs (-6-) Fixed LO = 1.1 GHz, 1.7 GHz, 2.25 GHz, 3.13 GHz – Output IP3
Output IP3 vs. Temperature and Gain Setting
Output IP3 vs. Temperature and Gain Setting
(LO=1.1 GHz)
(LO=2.25 GHz)
50
50
LO Frequency = 2.25 GHz
Low Side Injection
LO Frequency = 1.1 GHz
High Side Injection
46
46
42
38
34
30
26
22
18
14
10
42
38
34
30
26
22
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
18
14
10
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
Output IP3 vs. Temperature and Gain Setting
Output IP3 vs. Temperature and Gain Setting
(LO=1.7 GHz)
(LO=3.13 GHz)
50
50
LO Frequency = 3.13 GHz
LO Frequency = 1.7 GHz
Low Side Injection
Low Side Injection
46
42
38
34
30
26
22
18
14
10
46
42
38
34
30
26
22
18
14
10
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50 100 150 200 250 300 350 400 450 500 550 600 650 700
IF Frequency (MHz)
18
Rev O August 29, 2017
TOCs (-7-) Fixed LO = 1.1 GHz, 1.7 GHz, 2.25 GHz, 3.13 GHz – Gain
Gain vs. Temperature and Gain Setting
Gain vs. Temperature and Gain Setting
(LO=1.1 GHz)
(LO=2.25 GHz)
14
14
LO Frequency = 1.1 GHz
High Side Injection
LO Frequency = 2.25 GHz
Low Side Injection
12
10
8
12
10
8
6
6
4
4
2
2
0
0
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
-2
-4
-6
-2
-4
-6
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
Gain vs. Temperature and Gain Setting
Gain vs. Temperature and Gain Setting
(LO=1.7 GHz)
(LO=3.13 GHz)
14
12
LO Frequency = 3.13 GHz
Low Side Injection
LO Frequency = 1.7 GHz
Low Side Injection
12
10
8
10
8
6
6
4
4
2
2
0
0
-2
-4
-6
-8
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
-2
-4
-6
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50 100 150 200 250 300 350 400 450 500 550 600 650 700
IF Frequency (MHz)
19
Rev O August 29, 2017
TOCs (-8-) Fixed LO = 1.1 GHz, 1.7 GHz, 2.25 GHz, 3.13 GHz – Input P1dB
Input P1dB vs. Temperature and Gain Setting
Input P1dB vs. Temperature and Gain Setting
(LO=1.1 GHz)
(LO=2.25 GHz)
16
16
Measurement Setup Limited
LO Frequency = 1.1 GHz
High Side Injection
14
12
10
8
14
12
10
8
LO Frequency = 2.25 GHz
6
Low Side Injection
6
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
4
G=11dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
4
2
0
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
2
0
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
Input P1dB vs. Temperature and Gain Setting
Input P1dB vs. Temperature and Gain Setting
(LO=1.7 GHz)
(LO=3.13 GHz)
16
20
LO Frequency = 3.13 GHz
Low Side Injection
18
16
14
12
10
8
14
12
10
8
LO Frequency = 1.7 GHz
Low Side Injection
6
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
4
2
0
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
6
4
2
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50 100 150 200 250 300 350 400 450 500 550 600 650 700
IF Frequency (MHz)
20
Rev O August 29, 2017
TOCs (-9-) Fixed LO = 1.1 GHz, 1.7 GHz, 2.25 GHz, 3.13 GHz – 2x2 Rejection
2x2 Rejection vs. Temperature and Gain Setting
2x2 Rejection vs. Temperature and Gain Setting
(LO=1.1 GHz)
(LO=2.25 GHz)
-20
-20
LO Frequency = 1.1 GHz
High Side Injection
LO Frequency = 2.25 GHz
Low Side Injection
-30
-40
-50
-60
-70
-80
-90
-100
-30
-40
-50
-60
-70
-80
-90
-100
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
2x2 Rejection vs. Temperature and Gain Setting
2x2 Rejection vs. Temperature and Gain Setting
(LO=1.7 GHz)
(LO=3.13 GHz)
-20
-20
LO Frequency = 3.13 GHz
LO Frequency = 1.7 GHz
Low Side Injection
Low Side Injection
-30
-40
-50
-60
-70
-80
-90
-100
-30
-40
-50
-60
-70
-80
-90
-100
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50 100 150 200 250 300 350 400 450 500 550 600 650 700
IF Frequency (MHz)
21
Rev O August 29, 2017
TOCs (-10-) Fixed LO = 1.1 GHz, 1.7 GHz, 2.25 GHz, 3.13 GHz – 3x3 Rejection
3x3 Rejection vs. Temperature and Gain Setting
3x3 Rejection vs. Temperature and Gain Setting
(LO=1.1 GHz)
(LO=2.25 GHz)
-20
-20
LO Frequency = 1.1 GHz
High Side Injection
LO Frequency = 2.25 GHz
Low Side Injection
-30
-40
-50
-60
-70
-80
-90
-100
-30
-40
-50
-60
-70
-80
-90
-100
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
3x3 Rejection vs. Temperature and Gain Setting
3x3 Rejection vs. Temperature and Gain Setting
(LO=1.7 GHz)
(LO=3.13 GHz)
-20
-20
LO Frequency = 3.13 GHz
LO Frequency = 1.7 GHz
Low Side Injection
Low Side Injection
-30
-40
-50
-60
-70
-80
-90
-100
-30
-40
-50
-60
-70
-80
-90
-100
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50 100 150 200 250 300 350 400 450 500 550 600 650 700
IF Frequency (MHz)
22
Rev O August 29, 2017
TOCs (-11-) Fixed LO = 1.1 GHz, 1.7 GHz, 2.25 GHz, 3.13 GHz – Output IP2
Output IP2 vs. Temperature and Gain Setting
Output IP2 vs. Temperature and Gain Setting
(LO=1.1 GHz)
(LO=2.25 GHz)
80
80
LO Frequency = 1.1 GHz
High Side Injection
LO Frequency = 2.25 GHz
Low Side Injection
70
60
50
40
30
20
70
60
50
40
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=11dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
30
20
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
Output IP2 vs. Temperature and Gain Setting
Output IP2 vs. Temperature and Gain Setting
(LO=1.7 GHz)
(LO=3.13 GHz)
80
70
LO Frequency = 1.7 GHz
Low Side Injection
LO Frequency = 3.13 GHz
Low Side Injection
70
60
50
40
30
20
60
50
40
30
20
10
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=11dB / -40C
G=8dB / -40C
G=5dB / -40C
G=2dB / -40C
G=11dB / 25C
G=8dB / 25C
G=5dB / 25C
G=2dB / 25C
G=11dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
G=8dB / 105C
G=5dB / 105C
G=2dB / 105C
0
50
100 150 200 250 300 350 400 450 500 550 600
IF Frequency (MHz)
0
50 100 150 200 250 300 350 400 450 500 550 600 650 700
IF Frequency (MHz)
23
Rev O August 29, 2017
TOCs (-12-) Return Losses, Evaluation Kit Losses, STBY Settling Time
IF Port Return Loss vs. Gain Setting
Evaluation Kit IF Transformer Loss vs. Temperature
0
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
-1.6
-1.8
-2.0
IF_A / G=11dB / 25C amb
IF_A / G=8dB / 25C amb
IF_A / G=5dB / 25C amb
IF_A / G=2dB / 25C amb
IF_B / G=11dB / 25C amb
IF_B / G=8dB / 25C amb
IF_B / G=5dB / 25C amb
IF_B / G=2dB / 25C amb
-5
-10
-15
-20
-25
-30
T = -40C
T = 25C
T = 105C
0
50 100 150 200 250 300 350 400 450 500 550 600 650
IF Frequency (MHz)
50
100
150
200
250
300
350
400
450
500
550
IF Frequency (MHz)
RF Port Return Loss vs. LO Frequency
Evaluation Kit RF Trace Loss vs. Temperature
0.0
0
RFA
RFB
LO Frequency = RF Freq +/- 200 MHz
LO Power = 0 dBm
-0.2
-0.4
-0.6
-5
-10
-15
-20
-25
-0.8
T = -40C
T = 25C
T = 105C
-1.0
-1.2
-1.4
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF (GHz)
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
LO Port Return Loss vs. LO Power Level
STBY Settling Time
0
-5 dBm
0 dBm
77.7mV
65.7mV
53.7mV
41.7mV
29.7mV
17.7mV
5.7mV
4.15V
3.55V
2.35V
1.75V
1.15V
0.55V
-0.05V
RF signal
envelope
+5 dBm
-5
-10
-15
-20
-25
STBY
signal
-1.78 µs
0.0 µs
1.78 µs 3.56 µs 5.34 µs 7.12 µs 8.90 µs 10.68 µs 12.46 µs 14.24 µs 16.02 µs
0.06dB
-0.10dB
-0.26dB
-0.43dB
-0.60dB
-0.77dB
-0.95dB
101%
98.9%
97.0%
95.2%
93.3%
91.5%
within 0.1 dB
at 900 nsec
90% at
330 nsec
89.6%
160 ns 360 ns
560 ns
760 ns 960 ns 1.16 µs 1.36 µs 1.56 µs 1.76 µs 1.96 µs 2.16 µs
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
RF Frequency (GHz)
24
Rev O August 29, 2017
TOCs (-13-) Gain Settling Time
Gain Settling Time for 11 dB to 8 dB Gain Setting
Gain Settling Time for 5 dB to 8 dB Gain Setting
-200 ns -150 ns -100 ns -50 ns
0.0 s 50 ns 100 ns 150 ns 200 ns 250 ns
-200 ns -150 ns -100 ns -50 ns
0.0 s 50 ns 100 ns 150 ns 200 ns 250 ns
Gain Settling Time for 5 dB to 2 dB Gain Setting
Gain Settling Time for 8 dB to 11 dB Gain Setting
-200 ns -150 ns -100 ns -50 ns
0.0 s 50 ns 100 ns 150 ns 200 ns 250 ns
-200 ns -150 ns -100 ns -50 ns
0.0 s 50 ns 100 ns 150 ns 200 ns 250 ns
Gain Settling Time for 2 dB to 5 dB Gain Setting
Gain Settling Time for 8 dB to 5 dB Gain Setting
-200 ns -150 ns -100 ns -50 ns
0.0 s 50 ns 100 ns 150 ns 200 ns 250 ns
-200 ns -150 ns -100 ns -50 ns
0.0 s 50 ns 100 ns 150 ns 200 ns 250 ns
25
Rev O August 29, 2017
PACKAGE DRAWING
(4mm x 4mm 24-pin TQFN) with EPAD Option P1
26
Rev O August 29, 2017
LAND PATTERN
27
Rev O August 29, 2017
PIN DIAGRAM
Red denotes internal connection
24
23
22
21
20
19
18
17
16
1
VCC
RF_A
GND [RF_A_rtn]
2
3
LO2_ADJ
LO_IN
NC
4
5
6
15
14
13
GND [LO_rtn]
LO1_ADJ
NC
Bias
Control
GND [RF_B_rtn]
IFRef_Bias
RF_B
7
8
9
10
11
12
28
Rev O August 29, 2017
PIN DESCRIPTION
Pin
Name
Function
Main Channel RF Input. Matched to 50 ohms. DO NOT apply DC
to this pin.
1
RF_A
RF_A_rtn,
RF_B_rtn,
LO_rtn
2, 5, 15
Transformer Ground Returns. Ground these pins.
3, 4
6
N.C.
Not Connected
Diversity Channel RF Input. Matched to 50 ohms. DO NOT apply
DC to this pin.
RF_B
Power Supply. Bypass to GND with capacitors shown in the
Typical Application Circuit as close as possible to pin.
Connect the specified resistor from this pin to ground to set the
bias for the Diversity IF amplifier.
7, 18, 24
8
VCC
IF_BiasB
Diversity Mixer Differential IF Output. Connect pullup inductors
from each of these pins to VCC (see the Typical Application
Circuit).
9, 10
IFB+, IFB-
Gain select control pin logic includes internal pull-down resistor.
See gain select truth table for desired setting
Gain select control pin logic includes internal pull-down resistor.
See gain select truth table for desired setting
Connect the specified resistor from this pin to ground to set the
IF amplifier reference current.
11
12
Gain_Select1
Gain_Select2
13
14
IFRef_Bias
LO1_ADJ
Connect 0 ohm resistor to GND for best performance.
16
17
19
LO_IN
Local Oscillator Input. DO NOT apply DC to this pin.
LO2_ADJ
STBY_A
Connect 0 ohm resistor to GND for best performance.
Standby Channel A (Low/Open = Channel A power ON, High =
Channel A power OFF). Includes internal pull-down resistor.
Standby Channel B (Low/Open = Channel B power ON, High =
Channel B power OFF). Includes internal pull-down resistor.
20
STBY_B
Main Mixer Differential IF Output. Connect pullup inductors from
each of these pins to VCC (see the Typical Application Circuit).
Connect the specified resistor from this pin to ground to set the
bias for the Main IF amplifier.
21, 22
23
IFA-, IFA+
IF_BiasA
Exposed Pad. Internally connected to GND. Solder this exposed
pad to a PCB pad that uses multiple ground vias to provide heat
transfer out of the device into the PCB ground planes. These
multiple via grounds are also required to achieve the specified
RF performance.
— EP
29
Rev O August 29, 2017
EVKIT PICTURE
30
Rev O August 29, 2017
EVKIT / APPLICATIONS CIRCUIT
VCC4
C10
C9
L3
L4
Balun Center Tap
T2
J8
J9
C19
C20
3
4
5
3
4
5
1
1
4
3
2
1
VCC
R15
C23
C22
6
R16
C16
C15
SD_1
SD_2
J7
R14
VCC5
C12
2
9
1
3
5
7
C11
G_SET2
G_SET1
SD_1
SD_2
VCC
4
10
6
11
8
R13
U1
12
J1
C7
C8
C1
3
4
5
1
1
18
17
16
15
14
13
VCC3
RF_A
Vcc
4x2 Header
R12
2
3
4
5
6
GND
NC
LO2_ADJ
LO_IN
3
4
5
1
F
1
1
9
2
J4
C21
NC
GND
J2
C2
GND
RF_B
LO1_ADJ
IFRefBias
3
4
5
1
25
R10
PAD
R9
R11
G_SET2
G_SET1
VCC1
C4
VCC1 VCC2 VCC3 VCC4 VCC5
C13
C14
C3
1
1
1
1
1
TP5
TP4
TP3
TP2
TP1
R8
R6
L1 L2
J3
C18
C17
3
4
5
T3
1
6
4
1
R3
R4
R5
R1
R2
2
3
R7
VCC2
VCC
C6
C5
Balun Center Tap
31
Rev O August 29, 2017
EVKIT BOM
Part Reference
QTY
DESCRIPTION
Mfr. Part #
Mfr.
C3, C5, C7, C9,
C11, C22
6
1000pF ±5%, 50V, C0G Ceramic Capacitor (0402)
GRM1555C1H102J
Murata
C4, C6, C8, C10,
C12, C17-C20,
C23
10
10,000pF ±10%, 50V, X7R Ceramic Capacitor (0603)
GRM188R71H103KA01D
Murata
C21
1
2
1000pF ±5%, 50V, C0G Ceramic Capacitor (0402)
39pF ±5%. 5V, C0G Ceramic Capacitor (0402)
0 Ohm, 1/10W, Resistor (0402)
GRM1555C1H102J
GRM1555C1H390J
ERJ-2GE0R00X
Murata
Murata
C1, C2
R1-R5, R7, R8,
R9, R11, R12,
R13, R14, R15
13
Panasonic
R6, R16
R10
2
1
4
2
1
3
1
1
390 Ohm ±1%, 1/10W, Resistor (0402)
1.74 kOhm ±1%, 1/10W, Resistor (0402)
390nH ±5%, 0.29 A, Ceramic Chip Inductor (0805)
4:1 Center Tap Balun
ERJ-2RKF3900X
ERJ-2RKF1741X
0805CS-391XJL
TC4-6TG2+
Panasonic
Panasonic
Coilcraft
L1-4
T1-T2
J7
Mini-Circuits
FCI
CONN HEADER VERT DBL 4POS GOLD
Edge Launch SMA Connector (Big)
67997-108HLF
142-0701-851
142-0711-821
F1192BNLGK
J2-J6
J1
Emerson Johnson
Emerson Johnson
IDT
Edge Launch SMA Connector (Small)
U1
RF Dual Wideband Gain-Settable Downconverting Mixer
4x4 TQFN24
1
Printed Circuit Board
F1192 EVKIT REV 01
IDT
32
Rev O August 29, 2017
APPLICATIONS INFORMATION
Power Supplies
A common VCC power supply should be used for all pins requiring DC power. All supply pins should be
bypassed with external capacitors to minimize noise and fast transients. Supply noise can degrade noise figure
and fast transients can trigger ESD clamps and cause them to fail. Supply voltage change or transients should
have a slew rate smaller than 1V/20uS. In addition, all control pins should remain at 0V (+/-0.3V) while the
supply voltage ramps or while it returns to zero.
Control Pin Interface
If control signal integrity is a concern and clean signals cannot be guaranteed due to overshoot, undershoot,
ringing, etc., provisions for an R-C circuit at the input of each control pin is recommended. This applies to pins
11, 12, 19, and 20 as shown below.
5Kohm
5Kohm
STBY_B
STBY_A
2pf
2pf
24
23
22
21
20
19
18
17
16
1
2
3
IDTF1192B
Exposed pad (GND)
4
5
6
15
14
13
7
8
9
10
11
12
5Kohm
2pf
5Kohm
2pf
Gain_Select1
Gain_Select2
33
Rev O August 29, 2017
INDEPENDENT CHANNEL STANDBY
F1192B provides an independent path standby feature to reduce power consumption with a dedicated pin for each
path. The following table summarizes the required pin logic to achieve the desired standby setting. Internal pull down
resistors are included requiring no control to enable both channels.
GAIN SELECT
F1192B provides a gain select feature requiring 2 pins for logic control. The following table summarizes the required
pin logic to achieve the desired gain setting. Internal pull down resistors are included requiring no control to set both
channels to maximum gain.
Desired Power Gain Select1 Gain Select2
Gain (dB)
Pin 11
Pin 12
11
8
0
0
1
1
0
1
0
1
5
2
DEFAULT START-UP
Upon start-up, the device gain will be whatever the gain select pins are set for as defined in the table above.
Ordering Information
Orderable Part Number
Package
MSL Rating
Shipping Packaging
Temperature
F1192BNLGK
F1192BNLGK8
F1192BEVBI
4.0 x 4.0 x 0.90 mm QFN
4.0 x 4.0 x 0.90 mm QFN
Evaluation Board
1
1
Tray
-40° to +105°C
-40° to +105°C
Tape and Reel
Marking Diagram
1. Line 1 is the part number.
2. Line 2 “Y” is for die version.
3. Line 2 “1723” = yyww has two digits for the year and week the part was assembled.
4. Line 2 “G” denotes Assembly Site.
F1192BK
Y1723G
110A018P
5. Line 3 “110A018P” is the Assembly Lot number.
34
Rev O August 29, 2017
REVISION HISTORY SHEET
Rev
O
Date
August 29, 2017
Description of Change
Initial release.
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(Rev.1.0 Mar 2020)
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