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元器件品牌
FS20KM-6
[RENESAS]
MITSUBISHI Nch POWER MOSFET; 三菱N沟道功率MOSFET
元器件型号：
FS20KM-6
生产厂家：
RENESAS TECHNOLOGY CORP
描述和应用：
MITSUBISHI Nch POWER MOSFET
三菱N沟道功率MOSFET
晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
PDF文件：
总5页 (文件大小：84K)
下载文档：
下载PDF数据表文档文件
型号参数：FS20KM-6参数
查看货源
FS20KM-6A-A8
20A, 300V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FN, 3 PIN
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RENESAS
FS20KMA4A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 20A I(D) | TO-220AB
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12
ETC
FS20KMA-4A
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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51
POWEREX
FS20KMA5A
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 20A I(D) | TO-220AB
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16
ETC
FS20KMA-5A
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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POWEREX
FS20KMA-5A
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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11
RENESAS
FS20R06KFS
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 20A I(C)
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22
ETC
FS20R06KLS
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 20A I(C)
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15
ETC
FS20R06VE3
IGBT-modules
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156
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71
EUPEC
FS20R06VE3_B2
IGBT-modules
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72
EUPEC
FS20R06VE3B2BOMA1
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, MODULE-15
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1
INFINEON
FS20R06VE3BOMA1
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, MODULE-13
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156
-
0
INFINEON
FS20R06W1E3
EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and NTC
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31
INFINEON
FS20R06W1E3_B11
EasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC
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-
22
INFINEON
FS20R06W1E3BOMA1
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, MODULE-22
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0
INFINEON
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