FS30VSJ-03 [RENESAS]
MITSUBISHI Nch POWER MOSFET; 三菱N沟道功率MOSFET
| 型号： | FS30VSJ-03 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | MITSUBISHI Nch POWER MOSFET |
| 文件： | 总5页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS30VSJ-03
HIGH-SPEED SWITCHING USE
FS30VSJ-03
OUTLINE DRAWING
Dimensions in mm
10.5MAX.
4.5
r
1.3
+0.3
–0
0
1
5
B
0.5
0.8
q
w e
w r
q GATE
¡4V DRIVE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................. 30V
¡rDS (ON) (MAX) ............................................................. 38mΩ
¡ID ........................................................................................ 30A
¡Integrated Fast Recovery Diode (TYP.) ............ 45ns
e
TO-220S
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
30
±20
V
30
A
IDM
IDA
Drain current (Pulsed)
120
A
Avalanche drain current (Pulsed) L = 30µH
Source current
30
30
A
IS
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
120
A
PD
30
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
1.2
Tstg
—
Storage temperature
Weight
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30VSJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
30
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 15A, VGS = 10V
ID = 15A, VGS = 4V
—
±0.1
0.1
2.0
38
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
1.5
29
mΩ
mΩ
V
44
73
Drain-source on-state voltage ID = 15A, VGS = 10V
0.435
15
0.57
—
ID = 15A, VDS = 5V
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
S
Ciss
800
250
110
14
—
pF
pF
pF
ns
VDS = 10V, VGS = 0V, f = 1MHz
Coss
Crss
—
—
td (on)
tr
—
55
—
ns
VDD = 15V, ID = 15A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
Fall time
65
—
ns
60
—
ns
VSD
Source-drain voltage
Thermal resistance
Reverse recovery time
IS = 15A, VGS = 0V
Channel to case
1.0
—
1.5
4.17
—
V
Rth (ch-c)
trr
°C/W
ns
IS = 15A, dis/dt = –50A/µs
45
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
50
40
30
20
10
0
2
102
7
5
3
2
tw = 10ms
100ms
1ms
101
7
5
3
2
T
C
= 25°C
10ms
DC
Single Pulse
100
7
5
3
2
0
50
100
150
200
2 3 5 7100 2 3 5 7101 2 3 5 7102
2
CASE TEMPERATURE
T
C
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS = 10V
50
40
30
20
10
0
20
16
12
8
Tc = 25°C
Pulse Test
6V
8V
6V
4V
3V
= 30W
2.5V
V
GS = 10V
8V
4V
PD
3V
2V
4
P
D
= 30W
2V
Tc = 25°C
Pulse Test
0
0
1.0
2.0
3.0
4.0
5.0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN-SOURCE VOLTAGE
VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30VSJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5.0
4.0
3.0
2.0
1.0
0
50
50
30
20
10
0
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
V
GS = 4V
10V
I
D
= 50A
30A
10A
0
0
3
2
4
6
8
10
3
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN CURRENT (A)
GATE-SOURCE VOLTAGE
V
GS (V)
ID
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
40
32
24
16
8
102
7
Tc = 25°C
V
DS = 5V
V
DS = 10V
Pulse Test
5
Pulse Test
4
3
2
T
C
= 25°C 75°C
125°C
101
7
5
4
3
2
0
100
2
4
6
8
10
100
2
3 4 5 7 101 3 4 5 7 102
2
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
102
7
t
d(off)
Tch = 25°C
f = 1MH
GS = 0V
104
7
Z
5
V
t
t
f
4
5
3
2
3
2
r
t
d(on)
103
7
Ciss
101
7
5
3
2
Coss
Crss
5
4
102
7
3
2
Tch = 25°C
V
V
DD = 15V
GS = 10V
5
3
2
RGEN = RGS = 50Ω
100
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN-SOURCE VOLTAGE DS (V)
100
2
3 4 5 7 101
2
3 4 5 7 102
V
DRAIN CURRENT
ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30VSJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
8
50
40
30
20
10
0
V
GS = 0V
Tch = 25°C
= 30A
Pulse Test
I
D
6
V
DS = 10V
20V
25V
4
TC = 125°C
75°C
25°C
2
0
0
4
8
12
16
(nC)
20
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE
Qg
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
4.0
3.2
2.4
1.6
0.8
0
V
GS = 10V
V
DS = 10V
ID = 1mA
I
D
= 1/2I
D
5
Pulse Test
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
V
I
GS = 0V
D = 1mA
3
2
101
7
5
3
2
D = 1.0
0.5
0.2
P
DM
100
7
5
3
2
tw
0.1
0.05
0.02
0.01
T
tw
D
=
T
Single Pulse
10–1
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
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