FS50SM-2 [RENESAS]
MITSUBISHI Nch POWER MOSFET; 三菱N沟道功率MOSFET
| 型号： | FS50SM-2 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | MITSUBISHI Nch POWER MOSFET |
| 文件： | 总5页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FS50SM-2
HIGH-SPEED SWITCHING USE
FS50SM-2
OUTLINE DRAWING
Dimensions in mm
4.5
15.9MAX.
1.5
r
f 3.2
2
4.4
G
1.0
5.45
q
w
e
5.45
0.6
2.8
4
w r
¡10V DRIVE
q GATE
w DRAIN
e SOURCE
r DRAIN
¡VDSS ................................................................................100V
¡rDS (ON) (MAX) .............................................................. 55mΩ
¡ID ......................................................................................... 50A
¡Integrated Fast Recovery Diode (TYP.) ...........105ns
q
e
TO-3P
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
100
±20
V
50
A
IDM
IDA
Drain current (Pulsed)
200
A
Avalanche drain current (Pulsed) L = 50µH
Source current
50
50
A
IS
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
200
A
PD
70
W
°C
Tch
Tstg
—
–55 ~ +150
–55 ~ +150
4.8
Storage temperature
°C
g
Weight
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50SM-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
100
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
VGS = ±20V, VDS = 0V
VDS = 100V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 25A, VGS = 10V
ID = 25A, VGS = 10V
ID = 25A, VDS = 10V
—
±0.1
0.1
4.0
55
—
—
2.0
—
3.0
39
mΩ
V
—
0.98
33
1.38
—
—
S
Ciss
—
2300
410
185
35
—
pF
pF
pF
ns
ns
ns
ns
Coss
Crss
Output capacitance
VDS = 10V, VGS = 0V, f = 1MHz
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
—
Rise time
—
86
—
VDD = 50V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
100
80
—
Fall time
—
—
IS = 25A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
1.0
—
1.5
1.78
—
V
°C/W
ns
Rth (ch-c)
trr
—
IS = 50A, dis/dt = –100A/µs
Reverse recovery time
—
105
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
100
80
60
40
20
0
3
2
102
7
tw = 10ms
5
3
2
100ms
101
7
5
3
2
1ms
10ms
100
7
100ms
T
C
= 25°C
DC
5
3
Single Pulse
0
50
100
150
200
5 7100 2 3 5 7101 2 3 5 7102
2 3
3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS = 20V 10V 7V 6V
V
GS = 20V 10V
100
80
60
40
20
0
50
40
30
20
10
0
T
C
= 25°C
7V
Pulse Test
6V
5V
5V
T
C
= 25°C
Pulse Test
PD = 70W
P
D
= 70W
6
0
2
4
8
10
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50SM-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5
4
3
2
1
0
100
80
60
40
20
0
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
I
D
= 80A
V
GS = 10V
20V
50A
20A
0
0
3
4
8
12
16
20
3
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN CURRENT (A)
GATE-SOURCE VOLTAGE
V
GS (V)
ID
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
100
80
60
40
20
0
102
7
T
V
C
= 25°C
DS = 10V
Pulse Test
V
DS = 10V
Pulse Test
5
4
3
2
101
7
5
TC = 25°C
4
75°C
3
2
125°C
100
4
8
12
16
20
100
2
3 4 5 7 101 3 4 5 7 102
2
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
103
7
T
V
V
R
ch = 25°C
DD = 50V
GS = 10V
T
V
ch = 25°C
GS = 0V
104
7
5
3
2
5
f = 1MH
Z
4
GEN = RGS = 50Ω
3
2
Ciss
t
t
d(off)
d(on)
103
7
5
3
2
102
7
t
t
f
5
Coss
Crss
r
4
102
7
5
3
2
3
2
101
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN-SOURCE VOLTAGE DS (V)
100
2
3 4 5 7 101
2
3 4 5 7 102
ID (A)
V
DRAIN CURRENT
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50SM-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
100
80
60
40
20
0
V
GS = 0V
T
ch = 25°C
Pulse Test
I
D = 50A
V
DS = 20V
TC = 125°C
50V
80V
75°C
25°C
4
0
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE
Q
g
(nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5.0
4.0
3.0
2.0
1.0
0
V
GS = 10V
V
DS = 10V
ID = 1mA
I
D
= 1/2I
D
5
Pulse Test
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
1.4
1.2
1.0
0.8
0.6
0.4
V
I
GS = 0V
D = 1mA
5
3
2
101
7
5
3
D = 1.0
2
0.5
0.2
100
7
P
DM
5
3
0.1
0.05
0.02
0.01
tw
2
10–1
7
T
tw
D
=
5
T
3
Single Pulse
2
10–2
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
相关型号：
FS50SMH-06
Power Field-Effect Transistor, 50A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
POWEREX
FS50SMH-2
Power Field-Effect Transistor, 50A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
POWEREX
©2020 ICPDF网 联系我们和版权申明