FS5AS-06 [RENESAS]
High-Speed Switching Use Nch Power MOS FET; 高速开关用N沟道功率MOS FET
| 型号： | FS5AS-06 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | High-Speed Switching Use Nch Power MOS FET |
| 文件： | 总7页 (文件大小：173K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FS5AS-06
High-Speed Switching Use
Nch Power MOS FET
REJ03G1404-0200
(Previous: MEJ02G0087-0101)
Rev.2.00
Aug 07, 2006
Features
•
•
•
•
•
Drive voltage : 10 V
DSS : 60 V
DS(ON) (max) : 0.16 Ω
V
r
ID : 5 A
Integrated Fast Recovery Diode (TYP.) : 45 ns
Outline
RENESAS Package code: PRSS0004ZA-A
(Package name: MP-3A)
4
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
3
Applications
Motor control, Lamp contC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
Conditions
VGS = 0 V
60
V
V
±20
VDS = 0 V
5
A
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
IDM
20
A
IDA
5
A
L = 100 µH
IS
5
20
A
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
ISM
A
PD
20
W
°C
°C
g
Tch
Tstg
—
– 55 to +150
– 55 to +150
0.32
Typical value
Rev.2.00 Aug 07, 2006 page 1 of 6
FS5AS-06
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Symbol
V(BR)DSS
IGSS
Min
60
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
Max
—
Unit
V
Test Conditions
ID = 1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = 60 V, VGS = 0 V
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 10 V
ID = 2 A, VGS = 10 V
ID = 2 A, VDS = 5 V
—
±0.1
0.1
4.0
0.16
0.32
—
µA
mA
V
IDSS
—
VGS(th)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
3.0
0.12
0.24
4.0
280
120
35
Ω
V
S
—
pF
pF
pF
ns
ns
ns
ns
VDS = 10 V, VGS = 0 V,
f = 1MHz
Output capacitance
—
Reverse transfer capacitance
Turn-on delay time
—
15
—
VDD = 30 V, ID = 2 A,
GS = 10 V,
RGEN = RGS = 50 Ω
V
Rise time
tr
8
—
Turn-off delay time
td(off)
18
—
Fall time
tf
9
—
Source-drain voltage
VSD
1.0
—
1.5
IS = 2 A, VGS = 0 V
Thermal resistance
Rth(ch-c)
trr
Channel to case
Reverse recovery time
45
= 5 A, dis/dt = –100 A/µs
Rev.2.00 Aug 07, 2006 page 2 of 6
FS5AS-06
Performance Curves
Power Dissipation Derating Curve
Maximum Safe Operating Area
40
32
24
16
8
2
tw = 10µs
101
7
5
100µs
3
2
100
7
5
DC
3
2
10–1
7
Tc = 25°C
Single Pulse
5
3
2
0
0
50
100
150
200
2 3 5 7100 2 3 5 7101 2 3 5 7102
Drain-Source Voltage VDS (V)
2
Case Temperature Tc (°C)
cteristics (Typical)
Output Characteristics (Typical)
V
GS = 20V
0V 8V 7V
20
16
12
8
10V
8V
P
D
= 20W
6V
7V
Tc = 25°C
Pulse Test
5V
4
2
0
0
0
1.0
2.0
0
0.4
0.8
1.2
1.6
2.0
Drain-Sou
Drain-Source Voltage VDS (V)
On-State Resistance vs.
Drain Current (Typical)
On-S
Gate-Source cal)
5.0
4.0
3.0
2.0
1.0
0
200
160
120
80
V
GS = 10V
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
20V
I
D
= 8A
5A
2A
40
0
0
4
8
12
16
20
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Aug 07, 2006 page 3 of 6
FS5AS-06
Forward Transfer Admittance vs.
Drain Current (Typical)
Transfer Characteristics (Typical)
10
8
101
7
V = 5V
DS
Pulse Test
Tc = 25°C
= 10V
V
DS
Pulse Test
5
4
3
2
Tc = 25°C
75°C
6
100
7
125°C
4
5
4
3
2
2
0
10–1
100
0
3
0
4
8
12
16
20
2
3 4 5 7 101
2
3 4 5 7 102
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Capacitance vs.
Drain-Source Voltage (Typical)
aracteristics (Typical)
2
= 25°C
Tch = 25°C
f = 1MHz
104
7
5
= 30V
= 10V
= R = 50Ω
GS
GS
V
= 0V
GS
R
GEN
3
2
103
7
5
td(off)
(on)
3
2
Ciss
t
r
102
7
5
5
4
3
Cos
3
2
2
5 7100 2 3 5 7101
10–1
2
3 4 5 7 100
2
3 4 5 7 101
Drain-Sourc
Drain Current ID (A)
Gate
Gate
Source-Drain Diode Forward
Characteristics (Typical)
20
16
12
8
20
16
12
8
V = 0V
GS
Pulse Test
Tch = 25°C
= 5A
I
D
V
DS = 10V
20V
40V
Tc = 125°C
75°C
25°C
4
4
0
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
Gate Charge Qg (nC)
Source-Drain Voltage VSD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6
FS5AS-06
Threshold Voltage vs.
Channel Temperature (Typical)
On-State Resistance vs.
Channel Temperature (Typical)
101
7
5.0
4.0
3.0
2.0
1.0
0
V
= 10V
V
= 10V
GS
= 2A
Pulse Test
DS
I = 1mA
D
I
D
5
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Transipedance Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
102
7
V
= 0V
GS
= 1mA
5
I
D
3
PDM
tw
0.1
0.05
T
tw
T
0.02
0.01
D
=
Single Pulse
–50
0
50
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
Pulse Width tw (s)
Channel Temp
Switching Time it
Switching Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
R
10%
Vin
GEN
R
L
Vout
10%
10%
V
DD
R
GS
90%
90%
t
t
t
d(off)
t
f
d(on)
r
Rev.2.00 Aug 07, 2006 page 5 of 6
FS5AS-06
Package Dimensions
Package Name
MP-3A
JEITA Package Code
SC-63
RENESAS Code
PRSS0004ZA-A
Previous Code
MASS[Typ.]
0.32g
Unit: mm
2.3
6.6
5.3 0.2
0.5 0.2
0.1 0.1
0.76 0.2
0.76
0.5
2.3 0.2
Order Code
Standard order
code example
Lead form
Standard p
Standard order code
Surface-mounted type Taping
Type name – T +Direction (1 or 2) +3 FS5AS-06-T13
5 Type name FS5AS-06
Surface-mounted type Plas
(T
Note : Please confirm thhipping in detail.
Rev.2.00 Aug 07, 2006 page 6 of 6
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