FSF250D1 [RENESAS]
24A, 200V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN;
| 型号： | FSF250D1 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | 24A, 200V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总8页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FSF250D, FSF250R
24A, 200V, 0.110 Ohm, Rad Hard,
SEGR Resistant, N-Channel Power MOSFETs
June 1998
Features
Description
• 24A, 200V, r
• Total Dose
= 0.110Ω
The Discrete Products Operation of Intersil Corporation has
developed a series of Radiation Hardened MOSFETs specif-
ically designed for commercial and military space applica-
DS(ON)
- Meets Pre-RAD Specifications to 100K RAD (Si)
tions. Enhanced Power MOSFET immunity to Single Event
Effects (SEE), Single Event Gate Rupture (SEGR) in particu-
lar, is combined with 100K RADS of total dose hardness to
provide devices which are ideally suited to harsh space envi-
ronments. The dose rate and neutron tolerance necessary
for military applications have not been sacrificed.
• Single Event
- Safe Operating Area Curve for Single Event Effects
2
- SEE Immunity for LET of 36MeV/mg/cm with
V
up to 80% of Rated Breakdown and
of 10V Off-Bias
DS
V
GS
The Intersil portfolio of SEGR resistant radiation hardened
MOSFETs includes N-Channel and P-Channel devices in a
variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
DM
This MOSFET is an enhancement-mode silicon-gate power
field-effect transistor of the vertical DMOS (VDMOS) struc-
ture. It is specially designed and processed to be radiation
tolerant. The MOSFET is well suited for applications
exposed to radiation environments such as switching regula-
tion, switching converters, motor drives, relay drivers and
drivers for high-power bipolar switching transistors requiring
high speed and low gate drive power. This type can be
operated directly from integrated circuits.
• Photo Current
- 12nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
2
- Usable to 1E14 Neutrons/cm
Reliability screening is available as either commercial, TXV
equivalent of MIL-S-19500, or Space equivalent of
MIL-S-19500. Contact Intersil for any desired deviations
from the data sheet.
Ordering Information
RAD LEVEL
SCREENING LEVEL
Commercial
TXV
PART NO./BRAND
10K
FSF250D1
FSF250D3
FSF250R1
FSF250R3
FSF250R4
10K
Symbol
D
100K
100K
100K
Commercial
TXV
Space
G
Formerly available as type TA17657.
S
Package
TO-254AA
G
S
D
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 4046.3
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 19939-107
FSF250D, FSF250R
o
Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified
C
FSF250D, FSF250R
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
200
200
V
V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current
o
T
T
= 25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
24
15
A
A
A
V
C
D
D
o
= 100 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
C
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
72
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
±20
GS
Maximum Power Dissipation
o
T
T
= 25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
125
50
W
W
C
T
o
= 100 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
C
T
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . I
1.00
72
W/ C
A
A
A
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
24
S
SM
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
72
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T , T
-55 to 150
300
C
J
STG
o
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(Distance >0.063in (1.6mm) from Case, 10s Max)
C
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
o
Electrical Specifications T = 25 C, Unless Otherwise Specified
C
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
SYMBOL
BV
TEST CONDITIONS
= 1mA, V = 0V
MIN
TYP
MAX
-
UNITS
V
I
200
-
DSS
D
GS
o
V
V
= V
= 1mA
,
T
T
T
T
T
T
T
= -55 C
-
-
5.0
4.0
-
V
GS(TH)
GS
DS
C
C
C
C
C
C
C
I
o
D
= 25 C
1.5
-
V
o
= 125 C
0.5
-
-
V
o
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
V
V
= 160V,
= 0V
= 25 C
-
25
µA
µA
nA
nA
V
DSS
DS
GS
o
= 125 C
-
-
250
100
200
2.77
0.110
0.189
130
160
160
65
o
I
V
= ±20V
= 25 C
-
-
GSS
GS
o
= 125 C
-
-
Drain to Source On-State Voltage
Drain to Source On Resistance
V
V
= 12V, I = 24A
-
-
DS(ON)
GS
D
o
r
I
= 15A,
T
T
= 25 C
-
0.085
Ω
DS(ON)12
D
C
C
V
= 12V
o
GS
= 125 C
-
-
Ω
Turn-On Delay Time
Rise Time
t
V
R
R
= 100V, I = 24A,
-
-
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
d(ON)
DD
D
= 4.17Ω, V 12V,
L
GS
t
-
-
r
= 2.35Ω
GS
Turn-Off Delay Time
Fall Time
t
-
-
-
d(OFF)
t
-
f
Total Gate Charge
Q
V
= 0V to 20V
= 0V to 12V
= 0V to 2V
V
= 100V,
-
-
250
160
10
g(TOT)
GS
DD
= 24A
I
D
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Q
V
-
130
-
g(12)
g(TH)
GS
Q
V
-
GS
Q
-
26
65
7
36
gs
gd
Q
-
84
Plateau Voltage
V
I
= 24A, V
= 15V
-
-
(PLATEAU)
D
DS
= 25V, V = 0V,
GS
Input Capacitance
C
V
-
3200
625
175
-
-
pF
pF
pF
ISS
DS
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
C
C
-
-
OSS
-
-
RSS
o
R
-
1.00
48
C/W
JC
JA
θ
o
R
-
-
C/W
θ
3-108
FSF250D, FSF250R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
MIN
0.6
-
TYP
MAX
1.8
UNITS
V
V
I
I
= 24A
-
-
SD
SD
t
= 24A, dI /dt = 100A/µs
540
ns
rr
SD
SD
o
Electrical Specifications up to 100K RAD T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 0, I = 1mA
MIN
MAX
-
UNITS
Drain to Source Breakdown Volts (Note 3)
Gate to Source Threshold Volts (Note 3)
V
200
V
V
DSS
GS
D
V
V
= V , I = 1mA
DS
1.5
4.0
GS(TH)
GS
D
Gate to Body Leakage
(Notes 2, 3)
I
V
= ±20V, V
= 0V
= 160V
-
-
-
-
100
25
nA
µA
V
GSS
GS DS
Zero Gate Leakage
(Note 3)
I
V
= 0, V
DSS
GS DS
Drain to Source On-State Volts
Drain to Source On Resistance
(Notes 1, 3)
(Notes 1, 3)
V
V
= 12V, I = 24A
2.77
0.110
DS(ON)
GS
D
r
V
= 12V, I = 15A
Ω
DS(ON)12
GS
D
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
= 80% BV
.
DS
DSS
Single Event Effects (SEB, SEGR) (Note 4)
ENVIRONMENT (NOTE 5)
APPLIED
(NOTE 6)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
V
BIAS
MAXIMUM
GS
(V)
TEST
SYMBOL
V
BIAS(V)
DS
Single Event Effects Safe Operating Area SEESOA
Ni
Br
Br
Br
Br
26
37
37
37
37
43
36
36
36
36
-20
-5
200
200
-10
-15
-20
160
100
40
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
2
o
5. FLUENCE = 1E5 ions/cm (typical), T = 25 C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
Typical Performance Curves Unless Otherwise Specified
2
LET = 26MeV/mg/cm , RANGE = 43µ
1E-3
1E-4
2
LET = 37MeV/mg/cm , RANGE = 36µ
2
FLUENCE = 1E5 IONS/cm (TYPICAL)
200
160
120
ILM = 10A
30A
1E-5
1E-6
1E-7
100A
300A
80
40
0
o
TEMP = 25 C
10
30
100
300
1000
0
-5
-10
-15
-20
-25
DRAIN SUPPLY (V)
V
(V)
GS
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
3-109
FSF250D, FSF250R
Typical Performance Curves Unless Otherwise Specified (Continued)
30
o
T
= 25 C
C
100
20
100µs
10
1ms
10ms
10
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
100ms
DS(ON)
0
-50
0.1
100
0
T
50
100
150
1
10
600
o
, CASE TEMPERATURE ( C)
V
, DRAIN TO SOURCE VOLTAGE (V)
C
DS
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
2.0
1.5
1.0
0.5
0.0
PULSE DURATION = 250ms, V
GS
= 12V, I = 15A
D
Q
12V
G
Q
Q
GD
GS
V
G
CHARGE
-80
-40
0
40
80
120
160
o
T , JUNCTION TEMPERATURE ( C)
J
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r vs JUNCTION TEMPERATURE
DS(ON)
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t /t
t
t
1
2
1
2
+ T
PEAK T = P
x Z
J
DM
JC
C
θ
0.001
-5
-4
-3
-2
10
-1
0
1
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
3-110
FSF250D, FSF250R
Typical Performance Curves Unless Otherwise Specified (Continued)
300
100
o
STARTING T = 25 C
J
o
STARTING T = 150 C
J
10
IF R = 0
= (L) (I ) / (1.3 RATED BV - V
DSS DD
t
)
AV
AS
IF R ≠ 0
AV
1
0.01
t
= (L/R) ln [(I *R) / (1.3 RATED BV
AS
- V ) + 1]
DD
DSS
1
0.1
10
t
, TIME IN AVALANCHE (ms)
AV
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I IS REACHED
AS
V
DS
L
BV
DSS
+
I
-
CURRENT
TRANSFORMER
AS
t
P
V
DS
I
AS
V
VARY t TO OBTAIN
DD
P
+
50Ω
REQUIRED PEAK I
AS
V
DD
V
≤ 20V
GS
-
50V-150V
DUT
50Ω
t
P
0V
t
AV
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
t
t
ON
OFF
t
d(OFF)
V
DD
t
d(ON)
t
t
f
r
R
L
V
DS
90%
90%
V
DS
V
= 12V
GS
10%
10%
DUT
0V
90%
50%
R
GS
50%
V
GS
PULSE WIDTH
10%
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
3-111
FSF250D, FSF250R
Screening Information
Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).
o
Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) T = 25 C, Unless Otherwise Specified
C
PARAMETER
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Drain to Source On Resistance
Gate Threshold Voltage
NOTES:
SYMBOL
TEST CONDITIONS
= ±20V
GS
MAX
UNITS
nA
I
V
±20 (Note 7)
±25 (Note 7)
±20% (Note 8)
±20% (Note 8)
GSS
I
V
= 80% Rated Value
o
µA
DSS
DS
r
T
= 25 C at Rated I
D
Ω
DS(ON)
C
V
I
= 1.0mA
V
GS(TH)
D
7. Or 100% of Initial Reading (whichever is greater).
8. Of Initial Reading.
Screening Information
TEST
JANTXV EQUIVALENT
= 30V, t = 250µs
JANS EQUIVALENT
= 30V, t = 250µs
Gate Stress
V
V
GS
Optional
MIL-S-19500 Group A,
GS
Required
MIL-S-19500 Group A,
Pind
Pre Burn-In Tests (Note 9)
o
o
Subgroup 2 (All Static Tests at 25 C)
Subgroup 2 (All Static Tests at 25 C)
Steady State Gate
Bias (Gate Stress)
MIL-STD-750, Method 1042, Condition B
MIL-STD-750, Method 1042, Condition B
V
= 80% of Rated Value,
V
= 80% of Rated Value,
GS
T = 150 C, Time = 48 hours
GS
T = 150 C, Time = 48 hours
o
o
A
A
Interim Electrical Tests (Note 9)
All Delta Parameters Listed in the Delta Tests All Delta Parameters Listed in the Delta Tests
and Limits Table
and Limits Table
Steady State Reverse
Bias (Drain Stress)
MIL-STD-750, Method 1042, Condition A
MIL-STD-750, Method 1042, Condition A
V
= 80% of Rated Value,
V
= 80% of Rated Value,
DS
DS
o
o
T = 150 C, Time = 160 hours
T = 150 C, Time = 240 hours
A
A
PDA
10%
5%
Final Electrical Tests (Note 9)
MIL-S-19500, Group A, Subgroup 2
MIL-S-19500, Group A,
Subgroups 2 and 3
NOTE:
9. Test limits are identical pre and post burn-in.
Additional Screening Tests
PARAMETER
Safe Operating Area
SYMBOL
SOA
TEST CONDITIONS
MAX
1.75
72
UNITS
A
V
= 160V, t = 10ms
DS
Unclamped Inductive Switching
Thermal Response
I
V
= 15V, L = 0.1mH
A
AS
GS(PEAK)
∆V
∆V
t
t
= 100ms, V = 25V, I = 4A
136
187
mV
mV
SD
SD
H
H
H
Thermal Impedance
= 500ms, V = 25V, I = 4A
H H
H
3-112
FSF250D, FSF250R
Rad Hard Data Packages - Intersil Power Transistors
TXV Equivalent
E. Preconditioning Attributes Data Sheet
Hi-Rel Lot Traveler
1. Rad Hard TXV Equivalent - Standard Data Package
A. Certificate of Compliance
HTRB - Hi Temp Gate Stress Post Reverse
Bias Data and Delta Data
HTRB - Hi Temp Drain Stress Post Reverse
Bias Delta Data
B. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
D. Group A
E. Group B
F. Group C
G. Group D
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
- Attributes Data Sheet
2. Rad Hard Max. “S” Equivalent - Optional Data Package
A. Certificate of Compliance
2. Rad Hard TXV Equivalent - Optional Data Package
A. Certificate of Compliance
B. Serialization Records
B. Assembly Flow Chart
C. Assembly Flow Chart
C. Preconditioning - Attributes Data Sheet
- Precondition Lot Traveler
- Pre and Post Burn-In Read and Record
Data
D. SEM Photos and Report
E. Preconditioning - Attributes Data Sheet
- Hi-Rel Lot Traveler
D. Group A
- Attributes Data Sheet
- Group A Lot Traveler
- HTRB - Hi Temp Gate Stress Post
Reverse Bias Data and Delta Data
- HTRB - Hi Temp Drain Stress Post
Reverse Bias Delta Data
E. Group B
- Attributes Data Sheet
- Group B Lot Traveler
- X-Ray and X-Ray Report
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup B3)
- Bond Strength Data (Subgroup B3)
- Pre and Post High Temperature Operating
Life Read and Record Data (Subgroup B6)
F. Group A
G. Group B
H. Group C
I. Group D
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups A2, A3, A4, A5 and A7 Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups B1, B3, B4, B5 and B6 Data
F. Group C
- Attributes Data Sheet
- Group C Lot Traveler
- Pre and Post Read and Record Data for
Intermittent Operating Life (Subgroup C6)
- Bond Strength Data (Subgroup C6)
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Subgroups C1, C2, C3 and C6 Data
G. Group D
- Attributes Data Sheet
- Group D Lot Traveler
- Pre and Post RAD Read and Record Data
- Attributes Data Sheet
- Hi-Rel Lot Traveler
- Pre and Post Radiation Data
Class S - Equivalents
1. Rad Hard “S” Equivalent - Standard Data Package
A. Certificate of Compliance
B. Serialization Records
C. Assembly Flow Chart
D. SEM Photos and Report
3-113
FSF250D, FSF250R
TO-254AA
3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE
A
INCHES
MIN
MILLIMETERS
ØP
E
A
SYMBOL
MAX
0.260
0.050
0.045
0.800
0.545
MIN
6.33
MAX
6.60
NOTES
1
A
0.249
0.040
0.035
0.790
0.535
-
Q
A
1.02
1.27
-
1
H
1
Øb
D
0.89
1.14
2, 3
20.07
13.59
20.32
13.84
-
-
E
D
e
0.150 TYP
0.300 BSC
3.81 TYP
7.62 BSC
4
4
-
e
1
H
0.245
0.265
0.160
0.560
0.149
0.130
6.23
6.73
4.06
1
1
J
0.140
0.520
0.139
0.110
3.56
13.21
3.54
4
-
L
14.22
3.78
0.065 R MAX.
TYP.
ØP
Q
-
L
Øb
2.80
3.30
-
NOTES:
1. These dimensions are within allowable dimensions of Rev. A of
JEDEC outline TO-254AA dated 11-86.
1
2
3
J
e
1
2. Add typically 0.002 inches (0.05mm) for solder coating.
3. Lead dimension (without solder).
e
1
4. Position of lead to be measured 0.250 inches (6.35mm) from bot-
tom of dimension D.
5. Die to base BeO isolated, terminals to case ceramic isolated.
6. Controlling dimension: Inch.
7. Revision 1 dated 1-93.
WARNING!
BERYLLIA WARNING PER MIL-S-19500
Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical
operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound
shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’
compounds.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate
and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
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3-114
相关型号：
FSF250D3
24A, 200V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
RENESAS
FSF250R1
24A, 200V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
RENESAS
FSF250R3
24A, 200V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
RENESAS
FSF250R4
24A, 200V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, TO-254AA, 3 PIN
RENESAS
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