FX20ASJ-03 [RENESAS]
MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE; 三菱P沟道功率MOSFET的高速开关使用
| 型号： | FX20ASJ-03 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | MITSUBISHI Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 文件： | 总5页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Pch POWER MOSFET
FX20ASJ-03
HIGH-SPEED SWITCHING USE
FX20ASJ-03
OUTLINE DRAWING
Dimensions in mm
6.5
0.5 ± 0.1
5.0 ± 0.2
4
1.0
A
0.9 max
0.5 ± 0.2
2.3 2.3
0.8
1
2
3
3
1
2
3
4
GATE
DRAIN
SOURCE
DRAIN
4V DRIVE
•
1
VDSS ................................................................................–30V
•
rDS (ON) (MAX) .............................................................. 0.13Ω
•
2
4
ID .......................................................................................–20A
•
Integrated Fast Recovery Diode (TYP.) ...........50ns
•
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
–30
Unit
V
VGS = 0V
VDS = 0V
±20
V
–20
A
IDM
IDA
Drain current (Pulsed)
–80
A
Avalanche drain current (Pulsed) L = 10µH
Source current
–20
A
IS
–20
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
–80
A
PD
30
W
°C
°C
g
Tch
–55 ~ +150
–55 ~ +150
0.26
Tstg
—
Storage temperature
Weight
Typical value
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX20ASJ-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
–30
—
Typ.
—
Max.
—
ID = –1mA, VDS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –10A, VGS = –10V
ID = –2A, VGS = –4V
ID = –10A, VGS = –10V
ID = –10A, VDS = –5V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
±0.1
–0.1
–2.3
0.13
0.29
–1.3
—
—
—
VGS (th)
rDS (ON)
rDS (ON)
VDS (ON)
yfs
–1.3
—
–1.8
0.11
0.21
–1.1
5.8
1130
232
83
Ω
—
Ω
—
V
—
S
Ciss
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = –10V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
15
—
Rise time
—
33
—
VDD = –15V, ID = –10A, VGS = –10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
49
—
Fall time
—
26
—
IS = –10A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
–1.0
—
–1.5
4.17
—
Rth (ch-c)
trr
—
°C/W
ns
IS = –10A, dis/dt = 50A/µs
Reverse recovery time
—
50
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
40
32
24
16
8
–2
–102
–7
–5
tw =
10µs
–3
–2
100µs
–101
–7
–5
1ms
–3
–2
TC = 25°C
Single Pulse
10ms
–100
–7
–5
DC
–3
0
–2–2
0
50
100
150
200
–3 –5 –7–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102 –2
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–20
–16
–12
–8
–10
–8
–6
–4
–2
0
Tc = 25°C
Pulse Test
VGS = –10V
–8V
–6V
–6V
–5V
–4V
VGS =
–10V
–8V
–7V
–5V
PD = 30W
Tc = 25°C
Pulse Test
–4V
–3V
–4
–3V
0
0
–1.0
–2.0
–3.0
–4.0
–5.0
0
–0.4
–0.8
–1.2
–1.6
–2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX20ASJ-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
–5.0
–4.0
–3.0
–2.0
–1.0
0
0.40
0.32
0.24
0.16
0.08
0
Tc = 25°C
Pulse Test
V
GS = –4V
Tc = 25°C
Pulse Test
–10V
ID =
–20A
–10A
–5A
0
–2
–4
–6
–8
–10
–10–1 –2 –3 –5 –7–100 –2 –3 –5–7–101 –2 –3 –5 –7–102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
–16
–12
–8
101
7
Tc = 25°C
V
DS = –10V
5
4
Pulse Test
3
125°C
75°C
TC = 25°C
2
100
7
5
4
3
V
DS = –5V
–4
Pulse Test
2
0
10–1
0
–2
–4
–6
–8
–10
–3 –5 –7 –100
–2 –3 –5 –7 –101
–2 –3
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
103
7
104
7
5
5
Tch = 25°C
f = 1MH
GS = 0V
3
2
Z
V
3
2
102
7
t
d(off)
t
r
Ciss
103
7
5
5
t
f
3
2
3
2
101
7
5
t
d(on)
Coss
Crss
102
7
5
Tch = 25°C
V
V
GS = –10V
DD = –15V
GEN = RGS = 50Ω
3
2
3
2
R
100
–3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3
–5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102 –2 –3 –5
DRAIN-SOURCE VOLTAGE
VDS (V)
DRAIN CURRENT ID (A)
Jan.1999
MITSUBISHI Pch POWER MOSFET
FX20ASJ-03
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–10
–8
–6
–4
–2
0
–50
–40
–30
–20
–10
0
V
GS = 0V
Tch = 25°C
= –20A
Pulse Test
I
D
V
DS =
–10V
–20V
–25V
TC =
25°C
75°C
125°C
0
4
8
12
16
(nC)
20
0
–0.4
–0.8
–1.2
–1.6
–2.0
GATE CHARGE
Qg
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
GS = –10V
V
DS = –10V
ID = –1mA
I
D
= 1/2I
D
5
4
3
Pulse Test
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
V
I
GS = 0V
D = –1mA
3
2
101
7
5
0.1
D = 1.0
0.5
0.2
3
2
P
DM
100
7
5
tw
0.05
0.02
T
tw
D
=
3
2
T
0.01
Single Pulse
10–1
–50
0
50
100
150
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Jan.1999
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