FX6ASJ-03 [RENESAS]
High-Speed Switching Use Pch Power MOS FET; 高速开关使用P沟道功率MOS FET
| 型号： | FX6ASJ-03 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | High-Speed Switching Use Pch Power MOS FET |
| 文件： | 总7页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FX6ASJ-03
High-Speed Switching Use
Pch Power MOS FET
REJ03G0247-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
•
Drive voltage : 4 V
VDSS : – 30 V
r
DS(ON) (max) : 0.29 Ω
ID : – 6 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 40 ns
Outline
MP-3A
3
4
1. Gate
2. Drain
3. Source
4. Drain
1
1
2
3
2, 4
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Symbol
VDSS
VGSS
ID
Ratings
Unit
Conditions
–30
V
V
VGS = 0 V
±20
VDS = 0 V
–6
A
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
IDM
–24
A
IDA
–6
–6
A
L = 30 µH
IS
A
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
ISM
–24
A
PD
20
W
°C
°C
g
Tch
Tstg
—
– 55 to +150
– 55 to +150
0.32
Typical value
Rev.1.00, Aug.20.2004, page 1 of 6
FX6ASJ-03
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Symbol
V(BR)DSS
IGSS
Min.
–30
—
Typ.
—
Max.
—
Unit
V
Test conditions
ID = –1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = –30 V, VGS = 0 V
ID = –1 mA, VDS = –10 V
ID = –3 A, VGS = –10 V
ID = –1 A, VGS = – 4 V
ID = –3 A, VGS = –10 V
ID = –3 A, VDS = – 5 V
—
±0.1
–0.1
–2.3
0.29
0.62
– 0.87
—
µA
mA
V
IDSS
—
—
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
–1.3
—
–1.8
0.23
0.46
– 0.69
2.6
550
165
45
Ω
—
Ω
—
V
—
S
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = –10 V, VGS = 0 V,
f = 1MHz
Output capacitance
Coss
Crss
td(on)
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
—
9
—
VDD = –15 V, ID = –3 A,
GS = –10 V,
GEN = RGS = 50 Ω
V
R
Rise time
tr
—
14
—
Turn-off delay time
td(off)
—
32
—
Fall time
tf
—
14
—
Source-drain voltage
VSD
—
–1.0
—
–1.5
6.25
—
IS = –3 A, VGS = 0 V
Channel to case
Thermal resistance
Rth(ch-c)
trr
—
°C/W
ns
Reverse recovery time
—
40
IS = –3 A, dis/dt = 50 A/µs
Rev.1.00, Aug.20.2004, page 2 of 6
FX6ASJ-03
Performance Curves
Drain Power Dissipation Derating Curve
Maximum Safe Operating Area
–
–
–
102
–7
–5
40
32
24
16
8
–3
–2
tw = 10µs
101
–7
–5
100µs
–3
–2
1ms
100
–7
–5
10ms
DC
–3
–2
Tc = 25°C
Single Pulse
–
10–1
0
1
2
–2 –3 –5 –7
–10
–2
0
50
100
150
200
100
–2 –3 –5 –7 –2 –3 –5 –7
– –10
Case Temperature Tc (°C)
Drain-Source Voltage V
DS
(V)
Output Characteristics (Typical)
Output Characteristics (Typical)
–10
–8
–6
–4
–2
0
–5.0
–4.0
–3.0
–2.0
–1.0
0
–6V
Tc = 25°C
Pulse Test
–5V
V
GS
= –10V
–8V
–7V
Tc = 25°C
Pulse Test
–6V
–5V
–4V
V
GS
= –10V
–8V
–7V
P
D
= 20W
–4V
–3V
–3V
0
–1.0 –2.0 –3.0 –4.0 –5.0
0
–0.4
–0.8
–1.2
–1.6
–2.0
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
On-State Resistance vs.
Drain Current (Typical)
–5.0
–4.0
–3.0
–2.0
–1.0
0
1.0
0.8
0.6
0.4
0.2
0
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
V
= –4V
GS
I
D
= –10A
–6A
–10V
–3A
–1A
0
–2
–4
–6
–8
–10
–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5–7–102
Gate-Source Voltage V
(V)
Drain Current I (A)
D
GS
Rev.1.00, Aug.20.2004, page 3 of 6
FX6ASJ-03
Forward Transfer Admittance vs.
Drain Current (Typical)
Transfer Characteristics (Typical)
Tc = 25°C
–10
101
7
V
= –10V
Tc = 25°C
DS
Pulse Test
5
75°C
–8
–6
–4
–2
0
125°C
3
2
100
7
5
3
2
V
= –5V
DS
Pulse Test
0
–2
–4
–6
–8
–10
–10–1 –2 –3 –5 –7–100 –2 –3 –5 –7–101
Drain Current I (A)
D
Gate-Source Voltage V
(V)
GS
Capacitance vs.
Drain-Source Voltage (Typical)
Switching Characteristics (Typical)
102
104
7
5
Tch = 25°C
f = 1MHz
7
5
td(off)
V
GS
= 0V
3
2
3
2
103
7
tf
td(on)
tr
5
Ciss
101
7
3
2
5
Coss
Crss
102
7
3
2
Tch = 25°C
V
V
= –15V
= –10V
DD
GS
5
3
2
R
= R
= 50Ω
GS
GEN
100
–10–1 –2 –3 –5 –7–100 –2 –3 –5 –7 –101
–3 –5–7–100 –2–3 –5–7–101–2–3 –5–7–102 –2–3
Drain-Source Voltage V
(V)
Drain Current I (A)
D
DS
Source-Drain Diode Forward
Characteristics (Typical)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
–8
–6
–4
–2
0
–20
–16
–12
–8
–4
0
Tch = 25°C
= –6A
V
= 0V
GS
Pulse Test
I
D
V
= –10V
DS
–20V
–25V
Tc = 125°C
75°C
25°C
0
4
8
12
16
20
0
–0.4 –0.8
–1.2 –1.6
–2.0
Source-Drain Voltage V
(V)
Gate Charge Qg (nC)
SD
Rev.1.00, Aug.20.2004, page 4 of 6
FX6ASJ-03
On-State Resistance vs.
Channel Temperature (Typical)
Threshold Voltage vs.
Channel Temperature (Typical)
101
7
–4.0
–3.2
–2.4
–1.6
–0.8
0
V
= –10V
V
= –10V
GS
= 1/2 I
Pulse Test
DS
I = –1mA
D
I
D
D
5
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
Transient Thermal Impedance Characteristics
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
V
= 0V
GS
= –1mA
I
D
3
2
101
7
5
D = 1.0
0.5
0.2
3
2
P
DM
0.1
100
7
5
0.05
0.02
0.01
Single Pulse
tw
T
3
2
tw
T
D =
10–1
–50
0
50
100
150
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
Channel Temperature Tch (°C)
Pulse Width tw (s)
Switching Time Measurement Circuit
Switching Waveform
Vout
Monitor
Vin
Vin Monitor
10%
D.U.T.
R
GEN
R
L
90%
V
90%
90%
DD
R
GS
10%
10%
Vout
t
t
r
t
t
f
d(on)
d(off)
Rev.1.00, Aug.20.2004, page 5 of 6
FX6ASJ-03
Package Dimensions
MP-3A
EIAJ Package Code
Mass (g) (reference value)
0.32
Lead Material
Cu alloy
JEDEC Code
6.6
2.3
5.3 0.2
0.5 0.1
0.1 0.1
0.76 0.2
0.76
0.5 0.2
2.3 0.2
Dimension in Millimeters
Min Typ Max
Symbol
A
A
A
b
1
2
D
E
e
x
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
y
y1
ZD
ZE
Order Code
Standard order
code example
Lead form
Standard packing
Quantity
Standard order code
Surface-mounted type Taping
3000 Type name – T +Direction (1 or 2) +3 FX6ASJ-03-T13
75 Type name FX6ASJ-03
Surface-mounted type Plastic Magazine (Tube)
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 6 of 6
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