H7N0311LD-E
更新时间：2024-09-18 08:31:59
品牌：RENESAS
描述：Silicon N Channel MOS FET High Speed Power Switching
概述
规格参数
数据手册H7N0311LD-E 概述
Silicon N Channel MOS FET High Speed Power Switching 硅N沟道MOS FET高速电源开关 功率场效应晶体管
H7N0311LD-E 规格参数
| 是否Rohs认证： | 符合 | 生命周期： | Obsolete |
| 零件包装代码： | LDPAK(L) | 包装说明： | IN-LINE, R-PSIP-T3 |
| 针数： | 4 | Reach Compliance Code： | compliant |
| ECCN代码： | EAR99 | 风险等级： | 5.84 |
| 外壳连接： | DRAIN | 配置： | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压： | 30 V | 最大漏极电流 (Abs) (ID)： | 45 A |
| 最大漏极电流 (ID)： | 45 A | 最大漏源导通电阻： | 0.016 Ω |
| FET 技术： | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码： | R-PSIP-T3 |
| 元件数量： | 1 | 端子数量： | 3 |
| 工作模式： | ENHANCEMENT MODE | 最高工作温度： | 150 °C |
| 封装主体材料： | PLASTIC/EPOXY | 封装形状： | RECTANGULAR |
| 封装形式： | IN-LINE | 峰值回流温度（摄氏度）： | NOT SPECIFIED |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 60 W |
| 最大脉冲漏极电流 (IDM)： | 180 A | 认证状态： | Not Qualified |
| 子类别： | FET General Purpose Power | 表面贴装： | NO |
| 端子形式： | THROUGH-HOLE | 端子位置： | SINGLE |
| 处于峰值回流温度下的最长时间： | NOT SPECIFIED | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
H7N0311LD-E 数据手册
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PDF下载H7N0311LD, H7N0311LS, H7N0311LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1126-0500
(Previous: ADE-208-1423C)
Rev.5.00
Apr 07, 2006
Features
•
Low on-resistance
RDS (on) = 7.0 mΩ typ.
•
Low drive current
Outline
RENESAS Package code: PRSS0004AE-A
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (L) )
(Package name: LDPAK (S)-(1) )
4
4
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
1
2
3
H7N0311LD
H7N0311LS
D
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
G
1
2
3
S
H7N0311LM
Rev.5.00 Apr 07, 2006 page 1 of 7
H7N0311LD, H7N0311LS, H7N0311LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Symbol
VDSS
VGSS
ID
Value
Unit
V
30
±20
V
Drain current
45
A
Note 1
Drain peak current
ID (pulse)
180
A
Body to drain diode reverse drain current
Channel dissipation
IDR
Pch Note 2
θ ch-c
Tch
45
A
60
W
Channel to case thermal impedance
Channel temperature
2.08
150
°C/W
°C
°C
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
30
±20
—
Typ
—
Max
—
Unit
V
Test Conditions
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
V (BR) DSS
V (BR) GSS
IGSS
ID = 10 mA, VGS = 0
—
—
V
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
ID = 1 mA, VDS = 10 V Note 3
ID = 22.5 A, VGS = 10 V Note 3
ID = 22.5 A, VGS = 5 V Note 3
ID = 22.5 A, VDS = 10 V Note 3
VDS = 10 V
—
±10
10
2.5
8.8
16
—
µA
µA
V
IDSS
—
—
VGS (off)
RDS (on)
1.0
—
—
Static drain to source on state
resistance
7.0
11
45
mΩ
mΩ
S
—
Forward transfer admittance
Input capacitance
|yfs|
Ciss
Coss
Crss
Qg
27
—
—
—
—
—
—
—
—
—
—
—
—
1650
440
250
28
—
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
GS = 0
Output capacitance
Reverse transfer capacitance
Total gate charge
—
f = 1 MHz
—
—
VDD = 10 V
V
GS = 10 V
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Qgs
Qgd
td (on)
tr
6.0
5.4
22
—
ID = 45 A
—
—
VGS = 10 V, ID = 22.5 A
RL = 0.44 Ω
310
50
—
Rg = 4.7 Ω
Turn-off delay time
Fall time
td (off)
tf
—
16
—
Body to drain diode forward voltage
VDF
trr
0.93
40
—
IF = 45 A, VGS = 0
IF = 45 A, VGS = 0
diF/dt = 50 A/µs
Body to drain diode reverse recovery
time
—
ns
Note: 3. Pulse test
Rev.5.00 Apr 07, 2006 page 2 of 7
H7N0311LD, H7N0311LS, H7N0311LM
Main Characteristics
Power vs. Temperature Derating
80
Maximum Safe Operation Area
500
100
10 µs
60
40
20
0
10
1
Operation in
this area is
limited by RDS (on)
0.1
0.01
Tc = 25°C
1 shot Pulse
0
0.1 0.3
1
3
10
30
100
50
100
150
200
Case Temperature Tc (°C)
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
Typical Output Characteristics
50
40
30
20
10
0
50
40
30
20
10
0
10 V
6 V
4 V
VDS = 10 V
Pulse Test
Pulse Test
3.5 V
VGS = 3 V
8
Tc = 75°C
25°C
–25°C
0
2
4
6
10
0
1
2
3
4
5
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1.0
100
Pulse Test
Pulse Test
50
0.8
0.6
0.4
0.2
0
20
VGS = 5 V
10
ID = 50 A
10 V
5
20 A
10 A
2
1
0
4
8
12
16
20
0.1 0.2 0.5 1
2
5 10 20 50 100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.5.00 Apr 07, 2006 page 3 of 7
H7N0311LD, H7N0311LS, H7N0311LM
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
100
40
32
24
16
8
Pulse Test
Tc = –25°C
30
10
75°C
25°C
ID = 20 A
ID = 5 A, 10 A
3
1
VGS = 5 V
0.3
0.1
VDS = 10 V
Pulse Test
5 A, 10 A, 20 A
80 120
10 V
40
0
–40
0
160
0.1 0.3
1
3
10
30
100
Drain Current ID (A)
Case Temperature Tc (°C)
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance vs.
Drain to Source Voltage
1000
500
10000
3000
1000
Ciss
Coss
Crss
200
100
50
300
100
30
10
20
10
VGS = 0
f = 1 MHz
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
0.1 0.3
1
3 10 30 100
0
10
20
30
40 50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
500
20
50
40
30
20
10
0
ID = 45 A
VGS
t
200
100
50
r
16
12
8
VDD = 25 V
10 V
5 V
t
d(off)
VDS
t
d(on)
20
10
5
t
f
4
VDD = 25 V
10 V
5 V
VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 %
0
0
8
16
24
32
40
0.1 0.2 0.5
1
2
5 10 20 50 100
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.5.00 Apr 07, 2006 page 4 of 7
H7N0311LD, H7N0311LS, H7N0311LM
Reverse Drain Current vs.
Souece to Drain Voltage
50
40
30
20
10
0
10 V
VGS = 0
5 V
Pulse Test
1.6 2.0
0
0.4
0.8
1.2
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
Tc = 25°C
D = 1
0.5
0.3
0.1
θ
ch – c (t) =
γ
s (t) •
θch – c
θch – c = 2.08
°C/W, Tc = 25°C
PW
T
PDM
D =
0.03
0.01
0.01
PW
T
10 µ
100 µ
1 m
10 m
100 m
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
10%
10%
Vin
RL
Vout
10%
VDS
= 10 V
Vin
10 V
90%
90%
t
t
r
t
d(off)
t
f
d(on)
Rev.5.00 Apr 07, 2006 page 5 of 7
H7N0311LD, H7N0311LS, H7N0311LM
Package Dimensions
Package Name
LDPAK(L)
JEITA Package Code
RENESAS Code
PRSS0004AE-A
Previous Code
MASS[Typ.]
1.40g
Unit: mm
LDPAK(L) / LDPAK(L)V
4.44 0.2
1.3 0.15
10.2 0.3
1.3 0.2
1.37 0.2
2.49 0.2
+ 0.2
0.86
– 0.1
0.76 0.1
2.54 0.5
0.4 0.1
2.54 0.5
Package Name
LDPAK(S)-(1)
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
Previous Code
MASS[Typ.]
1.30g
Unit: mm
LDPAK(S)-(1) / LDPAK(S)-(1)V
4.44 0.2
7.8
6.6
10.2 0.3
1.3 0.15
2.49 0.2
+ 0.2
0.1
– 0.1
2.2
1.37 0.2
0.4 0.1
+ 0.2
– 0.1
1.3 0.2
0.86
2.54 0.5
2.54 0.5
Rev.5.00 Apr 07, 2006 page 6 of 7
H7N0311LD, H7N0311LS, H7N0311LM
Package Name
LDPAK(S)-(2)
JEITA Package Code
RENESAS Code
Previous Code
MASS[Typ.]
1.35g
Unit: mm
PRSS0004AE-C LDPAK(S)-(2) / LDPAK(S)-(2)V
4.44 0.2
7.8
6.6
10.2 0.3
1.3 0.15
2.49 0.2
+ 0.2
– 0.1
0.1
2.2
1.37 0.2
0.4 0.1
+ 0.2
– 0.1
1.3 0.2
0.86
2.54 0.5
2.54 0.5
Ordering Information
Part Name
Quantity
Shipping Container
H7N0311LD-E
500 pcs
Box (Conductive Sack)
Taping
H7N0311LSTL-E
H7N0311LMTL-E
1000 pcs
1000 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.5.00 Apr 07, 2006 page 7 of 7
Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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© 2006. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .6.0
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